Chemical etching method for bismuth selenide material

A chemical etching and bismuth selenide technology, which is applied in the field of chemical etching of bismuth selenide materials, can solve the problems that the surface of bismuth selenide materials deviates from the stoichiometric ratio, it is difficult to obtain an etching interface, and the etching rate is too fast. , to achieve the effect of convenient etching rate, etching rate control and simple process

Active Publication Date: 2016-05-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] However, there are certain technical limitations when using existing etchant to etch BiSe Bismuth oxide is used to etch the surface to reveal the morphology of defect etch pits; the second type - aqua regia etchant has the problems of too fast etching rate and uneven etching, and it is difficult to obtain a flat etching interface. Especially when etching bismuth selenide thin film materials, the etching rate at the film and substrate interfac...

Method used

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  • Chemical etching method for bismuth selenide material
  • Chemical etching method for bismuth selenide material
  • Chemical etching method for bismuth selenide material

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Embodiment 1

[0018] Embodiment 1: a kind of method that the epitaxial bismuth selenide single crystal thin film on the silicon substrate is etched, at first use standard photolithography technique to make on the bismuth selenide single crystal thin film epitaxial on the silicon substrate figure 2 The mask is shown, and the thickness h' of the mask is measured by a step meter; then potassium dichromate with a molar concentration of 0.02mol / L and a solution of concentrated sulfuric acid and concentrated hydrochloric acid with a volume ratio of 1.5:1 are used to prepare Potassium dichromate complex acid solution; use potassium dichromate complex acid solution to etch for 25 seconds, and measure the thickness h of the mask after etching with a step meter. Experiments have proved that the potassium dichromate compound acid solution has no corrosive effect on the mask, so h-h' is the thickness of etching. The etching was carried out stably at a speed of 150 nm / min, and finally a flat surfac...

Embodiment 2

[0019] Embodiment 2: A kind of method is carried out etching bismuth selenide single crystal flake after cleavage, at first use standard photolithography technique to make on the bismuth selenide single crystal flake after cleaving figure 2 Shown mask, then with the potassium dichromate that molar concentration is 0.03mol / L, the concentrated sulfuric acid and the concentrated hydrochloric acid solution that volume ratio is 1.5:1, make potassium dichromate compound acid solution; Use dichromate The potassium compound acid solution was etched for 30 seconds, and the etching thickness was measured to be 120nm by using a step meter, and the etching rate was obtained to be 60nm / min, and finally a flat surface was obtained on the surface of the bismuth selenide single crystal.

Embodiment 3

[0020] Embodiment 3: a kind of method that the bismuth selenide single crystal thin film epitaxial on silicon substrate (film thickness 300nm) is etched, at first use standard photolithography technique on the bismuth selenide single crystal thin film epitaxial on silicon substrate made as figure 2 Shown mask, then with the potassium dichromate that molar concentration is 0.012mol / L, the concentrated sulfuric acid and the concentrated hydrochloric acid solution that volume ratio is 1.5:1, make potassium dichromate compound acid solution; Use dichromate After the potassium compound acid solution was etched for 20 seconds, the etching thickness was measured to be 150 nm, and the etching rate was obtained to be 450 nm / min. A flat surface was obtained on the surface of the bismuth selenide single crystal, and the surface did not deviate from the stoichiometric ratio as measured by EDS.

[0021] The above method for etching intrinsic bismuth selenide material is also applicabl...

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Abstract

The invention relates to a chemical etching method for a bismuth selenide material. The chemical etching method includes the following steps that 1, a mask is manufactured, wherein the mask is a photolithographic mask and is manufactured through standard lithography and attached to the bismuth selenide material on a silicon substrate; 2, an etching agent is prepared, wherein the etching agent is a compound potassium bichromate acid solution and is prepared by evenly mixing, by volume percent, 9% of a potassium dichromate saturated aqueous solution, 48% of concentrated hydrochloric acid and 98% of concentrated sulfuric acid in a certain proportion; 3, etching is conducted, wherein compound potassium bichromate acid solution etching liquid obtained in step 2 is utilized to conduct etching on the bismuth selenide material of the attachement photolithographic mask obtained in attachment step 1. The chemical etching method is simple in process, convenient and fast to operate, low in cost and remarkable in effect and has the advantages that the etched bismuth selenide material is smooth in surface and meets the stoichiometric ratio, and the etching rate is convenient to control.

Description

technical field [0001] The invention relates to a chemical etching method for bismuth selenide material. Background technique [0002] Bismuth selenide (Bi 2 Se 3 ) is a traditional thermoelectric material. In recent years, studies have found that it is a strong topological insulator quantum material, and its bulk energy band gap is wide (~0.3eV). It is one of the topological insulator materials that are most likely to be applied at room temperature. Etching is a very necessary step in the process of making bismuth selenide into various thermoelectric energy devices and micro quantum devices. At present, the etching technology is mainly divided into dry etching and wet etching. The plasma equipment required for dry etching is expensive, the operation is complicated, and there is no selectivity to the etching of materials, so the damage to the mask is relatively large. Large; wet etching is divided into electrochemical etching and chemical etching, etc. Among them, chemica...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/46
CPCC30B29/46C30B33/10
Inventor 李含冬张忠阳高磊任武洋李勇龙城佳姬海宁戴丽萍周志华巫江牛晓滨王志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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