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12 results about "Tellurous acid" patented technology

Tellurous acid is an inorganic compound with the formula H₂TeO₃. It is the oxoacid of tellurium(IV). The compound is not well characterized. An alternative way of writing its formula is (HO)₂TeO. In principle, tellurous acid would form by treatment of tellurium dioxide with water, that is by hydrolysis. The related conjugate base is well known in the form of several salts such as potassium hydrogen tellurite, KHTeO₃.

Method for preparing copper and tellurium by reducing copper tellurite slag through rice

The invention discloses a method for preparing copper and tellurium by reducing copper tellurite slag through rice, and belongs to the field of metallurgical energy conservation and emission reduction and comprehensive utilization. The method provided by the invention comprises the following steps: washing, chopping and air-drying rice straws; fully mixing the treated crushed rice straw with the copper tellurite slag by using a ball mill; putting the mixed substances into a hydraulic tablet press, and pressing the mixed disintegrating slag into balls; carrying out two-stage vacuum pyrolysis reaction on the pretreated spherical mixture, wherein the first-stage reaction temperature is 350-500 DEG C; the reaction temperature of the second stage is 800-900 DEG C; and preparing to obtain metal copper and metal tellurium. The method overcomes the bottlenecks of pollution gas generation, pollution waste acid water generation, strong acid addition, long flow, complex process and the like in the traditional separation means of copper and tellurium in copper tellurite, realizes the separation of copper and tellurium in industrial grade copper tellurite compared with the traditional pyrolysis mode, and has the characteristics of environmental friendliness, low cost, stable product quality, easy realization of industrialization, and the like. And the like.
Owner:KUNMING UNIV OF SCI & TECH

Medium for selectively detecting and monitoring streptococcus sobrinus as well as preparation method and application of medium

The invention discloses a selective detection and monitoring culture medium for streptococcus sobrinus as well as a preparation method and application of the selective detection and monitoring culture medium, and belongs to the technical field of microorganisms. The culture medium comprises a carbon source, a nitrogen source, 4-5g / L of monopotassium phosphate, an additive and 15g / L of agar, the carbon source comprises 1-5g / L of glucose and 40-50g / L of sucrose; the nitrogen source comprises 12-18g / L of multivalent peptone and 3-7g / L of casein tryptone; the additive is prepared from 0.9-1.2 mg / L of crystal violet, 0.05-0.08 g / L of trypan blue, 2-10 mg / L of potassium tellurite, 40-60 mg / L of carumonan and 70-100 mg / L of sulfadimidine. The selective detection and monitoring culture medium for streptococcus sobrinus is high in growth selectivity, good in gram-positive bacterium growth inhibition effect, capable of well inhibiting fungus growth, sensitive in streptococcus sobrinus detection, high in specificity, simple in preparation procedure and suitable for industrial production. The practical operation feasibility is high, and the application of the culture medium for selectively detecting and monitoring the distant streptococcus is also included.
Owner:山东格研生物技术有限公司

Method for extracting tellurium from sodium tellurite solution through electrodeposition

The invention discloses a method for extracting tellurium from a sodium tellurite solution through electrodeposition, and belongs to the technical field of non-ferrous metal hydrometallurgy. The method comprises the following steps: dissolving crude tellurium dioxide in a sodium hydroxide solution at 60-90 DEG C to prepare a sodium tellurite electrolyte containing 200-240 g / L of tellurium and 90-110 g / L of sodium hydroxide; in the electrodeposition process, a composite additive composed of sodium ascorbate, pentasodium diethylenetriamine pentaacetate, sodium citrate and polyvinylpyrrolidone is synchronously added into the electrolyte. And carrying out electrodeposition for 14-15 days under the conditions that the current density is 40-60A / m, the voltage is 15-30V and the temperature is 15-30 DEG C. Through the synergistic effect of the composite additive, tellurite radicals in the anode region are remarkably inhibited from being oxidized into insoluble sodium tellurate, heavy metal impurity ions in the electrolyte are strongly complexed, and therefore the direct recovery rate of tellurium is increased to 90% or above while the better current efficiency is kept, and the purity of the obtained tellurium ingot reaches 99.95% or above.
Owner:SHANDONG HUMON SMELTING

Method for recovering Se and TeO2 from tellurium-containing crude selenium refining slag

The invention discloses a method for recovering Se and TeO2 from tellurium-containing crude selenium refining slag, which comprises the following steps of: crushing the tellurium-containing crude selenium refining slag, performing temperature-controlled roasting, decomposing nitrate, and oxidizing tellurium into a high valence state; the roasting slag and a reducing agent are mixed and heated under the vacuum condition, so that the selenium compound is reduced into elemental Se and volatilized, and meanwhile high-valence tellurium is reduced into tetravalent tellurium salt residues; crushing the reduced product, performing water-soluble leaching, and filtering to obtain a solution containing selenite and tellurite and TeO2 precipitate; adding acid into the leaching filtrate to hydrolyze the tellurite salt into TeO2 precipitate, and filtering and separating to obtain TeO2 and selenium-containing filtrate; finally, acid and a reducing agent are added into the selenium-containing filtrate, and selenite is reduced into elemental Se precipitate. The method realizes efficient separation and recovery of selenium and tellurium, is reasonable in process flow and high in recovery rate, and has a good application prospect.
Owner:KUNMING DIBOO TECH

Vibrio vulnificus selective culture medium and preparation method thereof

The present invention discloses a Vibrio vulnificus selective culture medium and a preparation method thereof. The culture medium comprises a basal culture medium and additives; the basal culture medium comprises peptone, beef extract powder, sodium chloride, potassium chloride, a long-chain alkyl sulfate anionic surfactant or nisin, D-cellobiose, an acid-base indicator, and agar; the additive is tellurite; and the solvent is water. When the basal culture medium contains nisin, the additives further comprise vancomycin, amphotericin B, and polymyxin E. The Vibrio vulnificus selective culture medium of the present invention has high growth selectivity, effectively inhibits the growth of Gram-positive bacteria, effectively inhibits fungal growth, and is sensitive and specific for detecting Vibrio vulnificus. Furthermore, the preparation method does not require autoclaving and avoids the inconvenience of preparing the high-content component, cellobiose, into a sterile additive prior to use, making it more convenient.
Owner:GUANGDONG INST OF MICROBIOLOGY GUANGDONG DETECTION CENT OF MICROBIOLOGY +1

Comprehensive recovery method for copper, tellurium and silver in tellurium-containing copper slag

The invention relates to a comprehensive recovery method of copper, tellurium and silver in tellurium-containing copper slag, which comprises the following steps: (1) ammoniacal leaching: adding tellurium-containing copper slag into an ammonia water solution, stirring for reaction, and carrying out solid-liquid separation to obtain an ammonia leaching solution and ammonia leaching slag; (2) copper and tellurium separation: adjusting the pH value of the ammonia leaching solution, then carrying out solid-liquid separation, and adding a caustic alkali solution into the obtained mixed precipitate for reaction to obtain a sodium tellurite solution and a copper hydroxide precipitate; (3) copper and tellurium vulcanization replacement: adding a sodium sulfide solution into the ammonia leaching residues for reaction, adding a sodium tellurite solution and a sulfuric acid solution into the obtained filtrate for reaction to obtain elemental tellurium with the purity of more than 98%; the obtained slag phase is used for recovering copper and gold and silver; and (4) preparation of magnesium tellurite: adjusting the pH value of the sodium tellurite solution, and then adding magnesium chloride solid for reaction to obtain a magnesium tellurite product with the purity of 98.5-99.5%. The method is short in process, easy to operate and low in cost, magnesium tellurite, elemental tellurium products and copper hydroxide by-products with high added values can be prepared, and precious metals such as gold and silver in the slag phase are remarkably enriched.
Owner:NORTHWEST RES INST OF MINING & METALLURGY INST

Material treatment method for radiopharmaceutical preparation

The invention discloses a material treatment method for radiopharmaceutical preparation. The material treatment method comprises the following steps: dissolving an irradiated tellurium dioxide target material in a sodium hydroxide solution to generate a sodium tellurite solution; adding hydrogen peroxide and a composite-phase molybdenum carbide catalyst into the solution, and adjusting the pH to an acidic condition to promote the tellurite radical to be preferentially converted into a high-valence tellurium compound; the method comprises the following steps: cooling I-containing iodine vapor through nitrogen-assisted distillation, and introducing the cooled I-containing iodine vapor into an alkaline NaOH solution for capturing; a composite-phase molybdenum carbide catalyst is adopted, the ratio of alpha-MoC to beta-MoC is regulated and controlled, and TiO deposition modification on the surface of beta-MoC is combined, so that the activity, stability and selectivity of the catalyst are remarkably improved; experiments show that the method enables the yield of iodine-131 to reach 92.76%, the purity to reach 99.65% and the content of by-products to be reduced to 0.12%; the contrast experiment further verifies the influence of the catalyst dosage, the phase composition and the distillation condition on the result, and verifies that efficient and high-purity iodine-131 preparation is realized through the catalytic synergistic effect and the surface functionalization design.
Owner:JIANGSU HUAJING MOLECULAR IMAGING & DRUG RES INST CO LTD

Modified high-nickel ternary positive electrode material, and preparation method therefor and use thereof

PCT designated stageWO2026108300A1Electrode thermal treatmentSecondary cellsOrganic solventTellurate
The present application belongs to the technical field of battery materials, and specifically relates to a modified high-nickel ternary positive electrode material, and a preparation method therefor and the use thereof. The preparation method for a modified high-nickel ternary positive electrode material provided by the present application comprises the following steps: 1) mixing a lithium source, a precursor, a tellurium source and a divalent metal compound, and subjecting same to first calcination, so as to obtain a first calcined product; (2) dissolving a tellurate in an organic solvent, mixing and grinding the resulting tellurate organic solvent solution and the first calcined product obtained in step (1), and then subjecting same to second calcination to obtain a second calcined product, wherein the tellurate is selected from at least one of potassium tellurite and sodium tellurite; and (3) washing the second calcined product obtained in step (2) with water, mixing same with boric acid, and subjecting the mixture to third calcination, so as to obtain the modified high-nickel ternary positive electrode material. Through the specific preparation method and the synergistic effect among the steps in the present application, the resulting modified high-nickel ternary positive electrode material has a good specific capacity, initial Coulombic efficiency and cycling performance.
Owner:GEM WUXI ENERGY MATERIAL CO LTD +1

Rare earth doped tellurite material and liquid phase preparation method thereof

The invention relates to the technical field of inorganic micro-nano material synthesis, and provides a rare earth doped tellurite material and a liquid phase preparation method thereof, the chemical formula of the obtained rare earth doped tellurite material is (R.E.) wTexOyClz, and R.E. Is a rare earth element and comprises one or more of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The method is simple in process, good in universality, low in energy consumption and flexible and adjustable in product component, and the mechanical stability and the chemical stability of the rare earth doped tellurite material are improved.
Owner:TIANJIN UNIV

Composite additive for semiconductor gold plating solution and application thereof

The invention belongs to a gold plating solution, and particularly relates to a composite additive for a semiconductor gold plating solution and application of the composite additive. The tellurite derivative comprises tellurite and substituted benzaldehyde, wherein the substituted benzaldehyde is shown as a general formula I, wherein R is selected from sulfonyl or a derivative thereof. According to the technical scheme provided by the invention, through synergistic compounding of tellurite and substituted benzaldehyde, the grain refinement degree and grain orientation of the plating layer are remarkably improved, so that the surface of the plating layer is flat and bright, and the gold plating layer with high compactness and high conductivity is obtained. And the gold plating solution can meet the defect-free thickness requirement of 0.05-40 [mu] m. Besides, the hardness of the plating layer before annealing is 60-100 HV, the electroplating liquid can operate in a wide process window (the current density is 0.5-5 A / dm, and the temperature is 50-70 DEG C), and various application requirements of semiconductor gold wiring, gold bumps, RDL gold layers and the like can be met.
Owner:MAXONE SEMICON CO LTD

Culture medium for bacteria

PCT designated stageWO2025198052A1BacteriaBiotechnologyO-Phosphoric Acid
The present invention addresses the problem of providing a culture medium having a lower degree of growth inhibition with respect to Escherichia albertii while containing tellurous acid and / or a salt thereof. The aforementioned problem is solved by a culture medium for bacteria, the culture medium containing tellurous acid and / or a salt thereof, and at least two components selected from the group consisting of phosphoric acid and / or salts thereof, non-meat raw-material peptones, polyvalent metal ions, and glucose.
Owner:PUBLIC UNIVERSITY CORPORATION OSAKA CITY UNIVERSITY

A lithium-rich manganese-based cathode material and its preparation method

The present invention belongs to the technical field of lithium-ion batteries, and particularly relates to a modification method for a lithium-rich manganese-based cathode material. A liquid-phase ion exchange reaction is carried out between the lithium-rich manganese-based cathode material and a tellurous acid source in a dissolved state, and then a calcination treatment is carried out in an oxygen-containing atmosphere to obtain a modified lithium-rich manganese-based cathode material; the tellurous acid source is at least one of telluric acid, tellurous acid, and hydrogen telluric acid; the calcination temperature is 350-750 °C. The present invention also relates to the material prepared by the above method and its application in lithium-ion batteries. The method of the present invention, based on the surface modification of the active material with a tellurous acid source and the calcination treatment, can synergistically improve the electrochemical performance of the active material.
Owner:CENT SOUTH UNIV