The invention relates to a bismuth base (bismuth selenide, bismuth telluride) hydrogen storage material and a preparation method thereof, relating to low temperature liquid phase synthesis of bismuth base material and the application thereof on hydrogen storage, lithium storage and electrode material. The invention is characterized in that water is taken as solvent, bismuth salts such as bismuth nitrate, bismuth chloride and the like as a bismuth source, and water-soluble tellurium (selenium) acid salts (such as sodium tellurite, selenium substituted sodium sulfate, sodium selenite) or tellurium (selenium) acids (such as orthotelluric acid, tellurous acid and selenous acid) as a tellurium source (selenium) source; proper coordination agents (such as nitrilotriacetic acid, hexamethylene diamine tetraacethyl and the like) and reducing agents (such as vitamin C, sodium borohydride and the like) are added for liquid phase reaction synthesis at the low temperature of 60-80 DEG C. The bismuth selenide crystal grains prepared by the invention take on flower shapes with the sphere diameter of 1-6mum, and the bismuth telluride crystal grains take on sheet shapes with nanometer diameter; the hydrogen storage performance reaches over 100mAh.g<-1>. The method has the advantages of cheap raw material, simple technique, convenient operation, easy mass production, etc.