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Indium-doping tellurous acid lead quantum dot sensitized solar cell and preparation method thereof

A technology for sensitization of solar cells and quantum dots is applied in the field of solar energy to achieve the effects of improving photoelectric conversion efficiency, increasing short-circuit current density and reducing dark current.

Inactive Publication Date: 2015-06-03
BEIJING INFORMATION SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current detection of PbTeO by the SILAR method 3 Quantum dots doped with In as a sensitizer to improve the performance parameters of p-type NiO-based quantum dot-sensitized solar cells has not been reported

Method used

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  • Indium-doping tellurous acid lead quantum dot sensitized solar cell and preparation method thereof
  • Indium-doping tellurous acid lead quantum dot sensitized solar cell and preparation method thereof
  • Indium-doping tellurous acid lead quantum dot sensitized solar cell and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0022] The specific steps of the indium-doped lead tellurite quantum dot sensitizer and its preparation method are:

[0023] 1) Equipped with Pb(NO at a concentration of 0.01M 3 ) 2 solution and Na 2 TeO 3 solution, put it in a water bath at 20-50°C for 30-60min;

[0024] 2) Add InCl 3 Add the Pb(NO 3 ) 2 solution, where In 3+ with pb 2+ The atomic number ratio is 1:10;

[0025] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0026] 4) Immerse the photocathode material NiO to be sensitized in the solution prepared in step 3) for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with a heating table;

[0027] 5) Immerse the photocathode material obtained in step 4) into the Na prepared in step 1) 2 TeO 3 solution for 5 minutes, take it out and clean it with the corresponding solvent, and dry it with a heating platform, then In-doped PbTeO is formed on the photocathode material. 3 quantum dot sensitizer l...

Embodiment 2

[0029] The specific steps of the indium-doped lead tellurite quantum dot sensitizer and its preparation method are:

[0030] 1) Equipped with Pb(NO at a concentration of 0.01M 3 ) 2 solution and Na 2 TeO 3 solution, put it in a water bath at 20-50°C for 30-60min;

[0031] 2) Add InCl 3 Add the Pb(NO 3 ) 2 solution, where In 3+ with pb 2+ The ratio of the number of atoms is 1:50;

[0032] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0033] 4) Immerse the photocathode material NiO to be sensitized in the solution prepared in step 3) for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with a heating table;

[0034] 5) Immerse the photocathode material obtained in step 4) into the Na prepared in step 1) 2 TeO 3 solution for 5 minutes, take it out and clean it with the corresponding solvent, and dry it with a heating platform, then In-doped PbTeO is formed on the photocathode material. 3 quantum dot sen...

Embodiment 3

[0036] The specific steps of the indium-doped lead tellurite quantum dot sensitizer and its preparation method are:

[0037] 1) Equipped with Pb(NO at a concentration of 0.01M 3 ) 2 solution and Na 2 TeO 3 solution, put it in a water bath at 20-50°C for 30-60min;

[0038] 2) Add InCl 3 Add the Pb(NO 3 ) 2 solution, where In 3+ with pb 2+ The atomic number ratio is 1:100;

[0039] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0040] 4) Immerse the photocathode material NiO to be sensitized in the solution prepared in step 3) for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with a heating table;

[0041] 5) Immerse the photocathode material obtained in step 4) into the Na prepared in step 1) 2 TeO 3 solution for 5 minutes, take it out and clean it with the corresponding solvent, and dry it with a heating platform, then In-doped PbTeO is formed on the photocathode material. 3 Quantum dot sensitizer ...

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Abstract

The invention relates to an indium (In)-doping tellurous acid lead (PbTeO3) quantum dot sensitizer for a solar cell and a preparation method of the sensitizer. The method comprises the following step of doping In impurity atoms into PbTeO3 quantum dots to form the sensitizer to assemble the quantum dot sensitized solar cell. Transmission paths of electron holes inside the cell are optimized, so that the electron holes can be more quickly separated and can be more effectively injected into valence bands of NiO, dark current is reduced, and the short-circuit current and the photoelectric conversion efficiency of the solar cell are improved. The method is simple and easy to operate and low in cost, and can be used for large-area manufacturing.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and more specifically relates to a doped quantum dot sensitizer for solar cells and a preparation method thereof. Background technique [0002] In recent years, human society is facing serious problems of deteriorating environment and increasing energy shortage. The energy crisis has intensified. However, today's energy supply still mainly depends on fossil energy. With the gradual depletion of fossil fuels and the increasing environmental pollution Increasingly, people have to look for new renewable energy sources. Safe, reliable, and pollution-free solar energy is undoubtedly the first choice for human future energy development. Therefore, using solar energy as a source of new energy supply has attracted the most attention, and it has received close attention from all walks of life in terms of technological development process and future prospects. A device that directly converts light e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042
Inventor 邹小平赵川何胜
Owner BEIJING INFORMATION SCI & TECH UNIV
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