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Bismuth base hydrogen storage material and preparation method thereof

A hydrogen storage material, bismuth-based technology, applied in bismuth selenide, bismuth-based hydrogen storage materials and its preparation, bismuth telluride layered compounds, hydrogen storage, preparation, lithium storage and electrode materials in the application field, to achieve operation Convenience, good dispersibility, cost reduction effect

Active Publication Date: 2011-10-05
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, Bi prepared by low-temperature wet chemical method 2 Se 3 、 Bi 2 Te 3 Nanostructures are rarely reported

Method used

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  • Bismuth base hydrogen storage material and preparation method thereof
  • Bismuth base hydrogen storage material and preparation method thereof
  • Bismuth base hydrogen storage material and preparation method thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0032] At room temperature, take 2mL 0.1m / l Bi(NO 3 ) 3 , 10mL 0.1m / L NTA (nitrilotriacetic acid), 3mL 0.1m / l Na 2 TeO 3 , 10mL 0.5m / l vitamin C is placed in a 50mL container, after mixing evenly, adjust the pH to 10 with ammonia water, and seal the container mouth with a polyethylene film to prevent solvent water from evaporating. Place the sealed container in a water bath at 70°C, keep it warm for 1 hour, cool the container to room temperature naturally, take out the product, centrifuge the product, and wash the separated product twice with ethanol and distilled water respectively. Vacuum drying at 50°C to obtain flaky bismuth telluride. figure 1 In the X-ray diffraction spectrum of the bismuth telluride nanosheets prepared for this example, no diffraction peaks of any impurities are found in the spectrum, indicating that the product is single-phase bismuth telluride nanosheets.

Embodiment 2

[0034] At room temperature, take 2mL 0.1m / l Bi(NO 3 ) 3 , 10mL 0.1m / L NTA, 3mL 0.1m / lNa 2 TeO 3 , 10mL 0.5m / l vitamin C is placed in a 50mL container, after mixing evenly, adjust the pH to 12 with ammonia water, and seal the container mouth with a polyethylene film to prevent solvent water from evaporating. Place the sealed container in a water bath at 70°C, keep it warm for 0.5 hours, cool the container to room temperature naturally, take out the product, centrifuge the product, and wash the separated product twice with ethanol and distilled water respectively. Vacuum drying at 50°C to obtain flaky bismuth telluride. figure 2 For SEM and TEM photos, it can be seen from the photos that the prepared Bi 2 Te 3 The nanosheets have a diameter of 200-300nm and a thickness of 30nm.

Embodiment 3

[0036] At room temperature, sequentially take 2mL of 0.1m / l BiCl 3 , 10mL 0.1m / L EDTA (hexanediaminetetraacetic acid), 3mL 0.1m / l Na 2 TeO 3 , 1mL 0.01m / l sodium borohydride is placed in a 50mL container, after mixing evenly, adjust the pH to 10 with ammonia water, and seal the container mouth with a polyethylene film to prevent the evaporation of solvent water. Place the sealed container in a water bath at 70°C, keep it warm for 1 hour, cool the container to room temperature naturally, take out the product, centrifuge the product, and wash the separated product twice with ethanol and distilled water respectively. Vacuum drying at 50°C to obtain flaky bismuth telluride. The synthesized bismuth telluride nanosheets were directly pressed into nickel foil, and their electrochemical properties were characterized by DT-5 electrical performance testing system. image 3 The electrochemical charge and discharge curves of the bismuth telluride nanosheets prepared for this example ca...

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Abstract

The invention relates to a bismuth base (bismuth selenide, bismuth telluride) hydrogen storage material and a preparation method thereof, relating to low temperature liquid phase synthesis of bismuth base material and the application thereof on hydrogen storage, lithium storage and electrode material. The invention is characterized in that water is taken as solvent, bismuth salts such as bismuth nitrate, bismuth chloride and the like as a bismuth source, and water-soluble tellurium (selenium) acid salts (such as sodium tellurite, selenium substituted sodium sulfate, sodium selenite) or tellurium (selenium) acids (such as orthotelluric acid, tellurous acid and selenous acid) as a tellurium source (selenium) source; proper coordination agents (such as nitrilotriacetic acid, hexamethylene diamine tetraacethyl and the like) and reducing agents (such as vitamin C, sodium borohydride and the like) are added for liquid phase reaction synthesis at the low temperature of 60-80 DEG C. The bismuth selenide crystal grains prepared by the invention take on flower shapes with the sphere diameter of 1-6mum, and the bismuth telluride crystal grains take on sheet shapes with nanometer diameter; the hydrogen storage performance reaches over 100mAh.g<-1>. The method has the advantages of cheap raw material, simple technique, convenient operation, easy mass production, etc.

Description

technical field [0001] The invention relates to a bismuth-based hydrogen storage material and a preparation method thereof. More specifically, the invention relates to bismuth selenide and bismuth telluride layered compounds, their preparation and their application in hydrogen storage, lithium storage and electrode materials. The invention belongs to the field of hydrogen storage materials. Background technique [0002] As a pollution-free, clean and renewable energy, the development and application of hydrogen energy has received widespread attention from various countries. The development and application of hydrogen energy includes four links: production, transportation, storage, and use. Among them, storage technology is a key link in the development and application. The goal of the U.S. Department of Energy is: for fuel cell electric vehicles, the volume hydrogen storage density must reach 62kgH 2 / m 3 The adsorbent has a weight density of 6.5 wt%. In order to achiev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04H01M4/58
CPCY02E60/12Y02E60/10
Inventor 陈立东孙正亮刘付胜聪陈喜红赵德刚熊震
Owner 江苏先进无机材料研究院
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