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Preparation method of high-quality bismuth selenide single crystal

A technology of bismuth selenide and single crystal, which is applied in chemical instruments and methods, single crystal growth, crystal growth, etc. It can solve the problems that the body state and the surface state cannot be clearly distinguished, and achieve the effect of simple method, rapid detection and advanced synthesis technology

Inactive Publication Date: 2019-11-29
JILIN NORMAL UNIV
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Problems solved by technology

However, the biggest disadvantage of this method is that the Fermi surface of the grown binary topological insulator is often located in the bulk band, and even when the bulk carrier concentration is low, the contribution of topological surface states is only 0.3%. often indistinguishable [3]

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  • Preparation method of high-quality bismuth selenide single crystal
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  • Preparation method of high-quality bismuth selenide single crystal

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[0023] A preparation method of high-quality bismuth selenide single crystal: the preparation method comprises the following steps:

[0024] (1), take by weighing 0.935g of Bi simple substance and 0.55g of Se simple substance and mix;

[0025] (2), the 1.485g reaction mixture that takes by step (1) is placed in the quartz tube of wall thickness 1mm diameter 10mm, uses molecular pump to evacuate (-3 Under the condition of Pa), the hydrogen-oxygen flame seals the tube, and the length of the sealed quartz tube is 200mm;

[0026] (3) Place the quartz tube sealed according to step (2) in a horizontal tube furnace. The section of the quartz tube with raw materials is close to the hot end of the tube furnace. There is a 10°C / cm gap in the horizontal direction of the tube furnace. Temperature gradient, so there is a temperature gradient of 20°C in the sealed quartz tube. This temperature gradient will ensure the smooth growth of crystals at the low temperature end. The tube furnace is ...

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Abstract

The invention discloses a preparation method of a high-quality bismuth selenide single crystal. According to the preparation method of the high-quality bismuth selenide single crystal, the molar ratioof Bi to Se is appropriately adjusted, a small excessive amount of Se is introduced as a transport agent, the problems that Se has high volatility and it is not easy to prepare a bismuth selenide compound with an ideal ratio are solved at the same time without introducing additional transport agents and fluxing agents, and the p-type or n-type high-quality bismuth selenide single crystal is prepared through an auto-doping effect. A bismuth selenide single crystal sample synthesized by the preparation method has high purity, an ideal stoichiometric ratio, a simple, environment-friendly and advanced synthesis process and high repeatability; and the synthesis product has a significant scientific value for studying the topological non-triviality of topological insulator materials.

Description

technical field [0001] The invention belongs to the field of preparation and application of topological insulator materials, and specifically relates to a method for preparing high-quality bismuth selenide single crystal based on chemical vapor transport (Chemical VaporTransport for short CVT). Background technique [0002] Topological insulator is a new quantum state of matter, which is completely different from metals and insulators in the traditional sense. Its bulk state is an insulating state with an energy gap, and its surface state is a metal state without an energy gap. The surface state is affected by the time of the bulk energy band structure. Inversion symmetry protection, less susceptible to defects and impurities in the system [1] . Topological insulators and their related physical phenomena are the current research hotspots in condensed matter physics and materials science. They have great scientific value both in basic research and in the fields of quantum co...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 张俊凯刘扶阳关壬铨赵钊张继野张艳刘闯
Owner JILIN NORMAL UNIV
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