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Three-dimensional thermoelectricity energy collector and manufacturing method thereof

The technology of an energy harvester and manufacturing method is applied in the field of three-dimensional thermoelectric energy harvester and its manufacturing, which can solve the problems of low energy collection efficiency, low manufacturing efficiency, and high manufacturing cost, and achieve improved mechanical stability, high Seebeck coefficient, The effect of simplifying the manufacturing process

Inactive Publication Date: 2013-09-11
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a three-dimensional thermoelectric energy harvester and its manufacturing method, which are used to solve the problems of high manufacturing cost, low manufacturing efficiency, and low energy collection efficiency of thermoelectric energy harvesters in the prior art. low problem

Method used

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  • Three-dimensional thermoelectricity energy collector and manufacturing method thereof
  • Three-dimensional thermoelectricity energy collector and manufacturing method thereof
  • Three-dimensional thermoelectricity energy collector and manufacturing method thereof

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Embodiment 1

[0057] Such as figure 2 a~ Figure 11 As shown, the present invention provides a method for manufacturing a three-dimensional thermoelectric energy harvester, at least including the following steps:

[0058] Such as Figure 2 ~ Figure 3b As shown, step 1) is carried out at first, providing a silicon substrate 101, etching the upper surface of the silicon substrate 101 to form a plurality of grooves 102 arranged at intervals, by each of the grooves 102 and the grooves 102 The area where silicon pillars 103 are to be prepared constitutes a thermopile area. In this embodiment, the silicon substrate 101 is selected as a low-resistance silicon substrate 101. Since the low-resistance silicon substrate has a higher bottom Seebeck coefficient and a lower resistance value, it can ensure a higher temperature when it is made into a thermoelectric column. High thermoelectric efficiency. In order to ensure a more accurate process, in this step, the low-resistance silicon substrate 101...

Embodiment 2

[0067] see Figure 2 ~ Figure 10b and Figure 12 , as shown in the figure, the basic steps of the manufacturing method of the three-dimensional thermoelectric energy harvester of this embodiment are as in Embodiment 1, wherein, in order to further increase the mechanical stability and thermoelectric efficiency of the thermopile, in the step 7), increase the A step of filling the annular groove 108 with an insulating material 109 .

Embodiment 3

[0069] see Figure 2 ~ Figure 10b and Figure 13 ~ Figure 14 , as shown in the figure, the basic steps of the manufacturing method of the three-dimensional thermoelectric energy harvester of this embodiment are as in embodiment 1 or embodiment 2, wherein, in order to realize the monolithic integration of the three-dimensional thermoelectric energy harvester and the circuit of the present invention, directly To supply power to the circuit in the chip, in the manufacturing method of the three-dimensional thermoelectric energy harvester of the present invention, it also includes the step of manufacturing CMOS circuit structures 113 and 114 on the upper supporting substrate 111 and the lower supporting substrate 112, and The upper and lower protection layers 121 and 122 are etched to form the wiring hole 115, and then metal wiring is formed in the wiring hole 115 to connect the CMOS circuit and the upper and lower metal wiring. Then the upper and lower protection layers 121 and 1...

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Abstract

The invention provides a three-dimensional thermoelectricity energy collector and a manufacturing method thereof. A plurality of grooves and silicon columns among the grooves are formed on low-resistance silicon in an etching mode, then an insulation layer is formed on the surfaces of the grooves, a thermoelectricity column is manufactured through a thin film deposition technology, a thermocouple pair is formed by the thermoelectricity column and adjacent silicon columns, a metal arranged wire is manufactured through technologies such as etching deposition, and manufacturing of the three-dimensional thermoelectricity energy collector is completed through technologies such as substrate thinning and substrate supporting in a bonding mode. According to the three-dimensional thermoelectricity energy collector and the manufacturing method thereof, a thermocouple pair structure is manufactured only through the one-time thin film deposition technology, and the manufacturing technology is simplified. Silicon is selected as a component of the thermocouple pair, and the fact that the thermocouple pair has the high Seebeck coefficient is guaranteed. The thermocouple pair of the vertical column-shaped structure is used, mechanical stability of the thermoelectricity energy collector is improved, the thermocouple structure, an upper supporting substrate and a lower supporting substrate are bound by wafer level binding, and accordingly manufacturing efficiency is improved.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a three-dimensional thermoelectric energy collector and a manufacturing method thereof. Background technique [0002] With the development of IoT technology, its application in industrial, commercial, medical, consumer and military fields has gradually deepened, and power supply has always been the key to the life of IoT applications and cost reduction. In harsh environments or other occasions where humans cannot reach or when network nodes move and change, battery replacement becomes very difficult or even impossible, so it is very important to effectively provide energy for IoT nodes. An effective solution is to use the method of energy harvesting to collect environmental energy, store the energy and provide it to the nodes of the Internet of Things. The temperature difference widely exists in the external environment, so energy harvesting using the temperature difference of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/14H01L35/32H01L27/16H01L35/34
CPCH10N19/00H10N10/01H10N10/17
Inventor 徐德辉熊斌王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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