S-doped modified BiCuSeO-based thermoelectric material and preparation method thereof

A thermoelectric material and modification technology, which can be applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., which can solve problems such as reduction of hole mobility.

Inactive Publication Date: 2017-04-05
涂艳丽
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Problems solved by technology

However, the doping of alkaline earth metals will reduce

Method used

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Embodiment 1

[0014] Raw material Bi 2 S 3 、 Bi 2 o 3 , Cu, Bi and Se according to the stoichiometric ratio (the target product is BiCuSeO 0 。 96 S 0.04 ) were weighed, put into an argon atmosphere glove box and ground for 1.5 hours to mix evenly; the raw materials were pressed into blocks and sealed in a vacuum quartz tube, and reacted at 573K for 15 hours; after the reaction samples were ground for 1.5 hours, they were cooled again Compressed into a vacuum quartz tube, reacted at 973K for 15h; ground the reacted sample, pressurized at 50MPa in the axial direction, and sintered by discharge plasma at 973K for 6min to obtain the thermoelectric material BiCuSeO 0.96 S 0.04 . After testing, the thermoelectric figure of merit reaches a maximum of 1.2 at 923K, which is 71% higher than that of pure phase BiCuSeO. After doping modification, the thermoelectric performance of the material has been effectively improved.

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Abstract

The invention provides S-doped modified BiCuSeO-based thermoelectric material and a preparation method thereof. The thermoelectric material is BiCuSeO1-xSx, x=0.01-0.05. The preparation method comprises two-step solid phase reaction and discharge plasma sintering molding (SPS). The preparation method is simple in technology and easy to operate. Compared with pure phase BiCuSeO, the thermoelectric merit figure ZT of the thermoelectric material BiCuSeO1-xSx is enhanced for more than 50%.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, and provides an S-doped modified BiCuSeO-based thermoelectric material and a preparation method thereof. Background technique [0002] In recent years, researchers have reported a tetracomponent mixture BiCuSeO, which has low thermal conductivity and can be used as a promising thermoelectric material. The limitation of the thermoelectric performance of undoped BiCuSeO mainly stems from its rather high resistivity of about 100 mΩ.cm. Doping with alkaline earth metal elements Mg, Sr, Ca, Ba and increasing the carrier concentration by Cu vacancies can increase the conductivity, and the ZT value can be increased to 0.76 at 873K, 0.9 at 923K and 0.81 at 923K, respectively. However, the doping of alkaline earth metals will reduce the hole mobility, which will limit the ZT value increase. Therefore, the way to overcome this defect is to find new doping elements. Contents of the inv...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/16
Inventor 不公告发明人
Owner 涂艳丽
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