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BiSbTeSe-based thermoelectric material

A technology of thermoelectric materials and mixing materials, applied in thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, inorganic chemistry, etc., can solve the problems of high thermal conductivity, material resistivity and thermal conductivity, and affecting material Thermoelectric performance and other issues, to achieve the effect of reducing thermal conductivity, good thermoelectric performance of materials, and improving thermoelectric performance

Inactive Publication Date: 2015-11-11
LEIZIG GUANGDONG THERMOELECTRIC TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The commercial low-temperature zone thermoelectric material currently on the market is Bi 2 Te 3 base alloy, in Bi 2 Te 3 On the basis of adding Sb or Se to form a ternary solid solution alloy, the conductivity is 0.8×10 5 -1.3×10 5 SM -1 Between, the Seebeck coefficient is 160-220μV / K, and the thermal conductivity is 1.4-2.4Wm -1 K -1 ;like figure 1 , figure 2 As shown, the existing Bi 2 Te 3 The ZT value of the base thermoelectric material is between 0.7-1.0, and the thermoelectric conversion efficiency is only 5%-7%. The main problem is that the thermal conductivity is high, and as the temperature increases, the material resistivity and thermal conductivity increase rapidly. Seriously affect the thermoelectric properties of the material

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preparation example Construction

[0034] A preparation method of a BiSbTeSe-based thermoelectric material, the preparation method comprising the following steps:

[0035] 1) Powder mixing: take four elemental powders of Bi, Sb, Se, Te and S, Si, P, Ge, Sn, Ce, Li, I, Br, Al, Cu, Ag, Yb, Tm, La, Gd , Dy elemental powder, or one or more mixed powders, put it into a vacuum ball mill tank or a mixer tank, and evacuate to 10 -1 Pa or pass argon, then use a ball mill or mix and mix;

[0036] 2) Alloy smelting: put the above-mentioned mixed powder into the furnace tube of the chemical vapor deposition equipment, and vacuumize to 10 -2 pa, heated to 1000°C-1100°C to melt and vaporize the raw material powder, carry out reaction deposition in the furnace tube, the reaction time is 20h, and naturally cool to room temperature after the reaction to obtain a BiSbTeSeS-based p-type thermoelectric material alloy ingot.

[0037] A preparation method of a BiSbTeSe-based thermoelectric material, the preparation method comprisi...

Embodiment 1

[0045] A BiSbTeSe-based thermoelectric material, the preparation method of the BiSbTeSe-based thermoelectric material is as follows:

[0046] 1) Powder mixing: according to the mole fraction of Bi, Sb, Te, Se and S: 8%, 32%, 54%, 3% and 3%, weigh Bi, Sb, S, Se with a purity of 4N and Te five elemental powders, put into a vacuum ball mill jar, and vacuumize to 10 -1 Pa or pass in argon, then use a ball mill or mix and mix, the speed of the vacuum ball mill tank is 50r / min, and the mixing time is 2h;

[0047] 2) Alloy smelting: put the above-mentioned mixed powder into the furnace tube of the chemical vapor deposition equipment, and vacuumize to 10 -2 pa, heated to 1000°C-1100°C to melt and vaporize the raw material powder, and carry out reaction deposition in the furnace tube. The reaction time is 20h. After the reaction is completed, it is naturally cooled to room temperature to obtain an alloy ingot of BiSbTeSeS-based p-type thermoelectric material. The BiSbTeSe The general...

Embodiment 2

[0049] A BiSbTeSe-based thermoelectric material, the preparation method of the BiSbTeSe-based thermoelectric material is as follows:

[0050] 1) Powder mixing: according to the mole fraction of Bi, Sb, Te, Se and S: 12%, 28%, 58%, 1.5% and 0.5%, weigh Bi, Sb, S, Se with a purity of 5N and Te five elemental powders, put into a vacuum ball mill jar, and vacuumize to 10 -1 Pa or pass in argon, then use a ball mill or mix and mix, the speed of the vacuum ball mill tank is 50r / min, and the mixing time is 2h;

[0051] 2) Alloy smelting: put the powder into a quartz tube with a diameter of 25mm that has been sealed at one end, vacuumize the quartz tube and melt the seal. First carry out zone smelting for 20 hours, and naturally cool to room temperature to obtain an alloy ingot of BiSbTeSeS-based p-type thermoelectric material. The general formula of the BiSbTeSe-based thermoelectric material is Bi 0.6 Sb 1.4 Te 2.9 Se 0.3 S 0.025 .

[0052] 1. Thermal conductivity test

[005...

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Abstract

The invention discloses a BiSbTeSe-based thermoelectric material. The formula of the BiSbTeSe-based thermoelectric material is Bi<m>Sb<n>Te<x>Se<y>M<z>, wherein m=0.4-0.6, n=1.4-1.6, x=2.7-2.9, y=0.075-0.3, z=0.02-0.15, and M is one or two kinds of elements selected from S, Si, P, Ge, Sn, Ce, Li, I, Br, Al, Cu, Ag, Yb, Tm, La, Gd and Dy. Steps such as powder mixing and alloy smelting are adopted to prepare the BiSbTeSe-based thermoelectric material. The BiSbTeSe-based thermoelectric material of the invention has the advantages of low thermal conductivity, excellent thermoelectric properties, extended application range and the like.

Description

technical field [0001] The invention relates to the technical field of new energy materials and their preparation, in particular to a BiSbTeSe-based thermoelectric material, which is a thermoelectric material formed by doping Se and one or more other metal elements on the basis of BiSbTe. Background technique [0002] In recent years, with rapid population growth and rapid industrial development, excessive exploitation of fossil fuels, energy and environmental issues have become increasingly prominent, and the energy crisis and environmental crisis have attracted the attention of all countries. However, about 70% of the energy consumed globally every year is wasted in the form of waste heat. If the waste heat can be effectively recycled, the problem of energy shortage will be greatly alleviated. Thermoelectric materials can directly convert thermal energy into electrical energy, and have the advantages of no transmission parts, small size, no noise, no pollution, and good re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16C22C30/00C22C1/04H10N10/852H10N10/01H10N10/853
CPCC22C1/02C22C1/05C01B19/002H10N10/853H10N10/852H10N10/01C01B19/00
Inventor 罗义平林彬
Owner LEIZIG GUANGDONG THERMOELECTRIC TECH CO LTD
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