55results about How to "High ion energy" patented technology

The invention discloses a PVD chromium base ceramic composite coating piston ring and a preparation method thereof, and the piston ring is manufactured by plating a chromium base ceramic composite coating on a basal body of the piston ring which is treated by nitriding by adopting high power electric arc discharge method; the chromium base ceramic composite coating is composed of a bonding layer, a main wearing layer and an anti-attrition layer, wherein, the bonding layer is binded with the basal body of the piston ring in a metallurgical way, the main wearing layer is arranged on the bonding layer, and the anti-attrition layer is positioned on the surface of the main wearing layer; the bonding layer is Cr, the main wearing layer is a Cr/CrN multilayer coating formed by the Cr and the CrN which are alternately arranged, and the anti-attrition layer is a Cr/Cr2O3 multilayer coating formed by the Cr and the Cr2O3 that are alternately arranged. The coating structure has reasonable design, and the manufactured coating has good cementing property, high hardness and good lubricating property. Furthermore, the method used for manufacturing the piston ring has no pollution in the preparation process, and overcomes the serious problem of environmental pollution of the conventional electrodeposited chromium; as the manufactured coating has better abrasion resistant and corrosion resistant performance compared with the electrodeposited chromium, the service life of the piston ring is greatly prolonged.

The invention discloses a method for preparing a bismuth, antimony and telluride base thermoelectric film and particularly relates to a Bi[2-x]SbxTe3 base thermoelectric film. In the Bi[2-x]SbxTe3, x is not less than 0.1 and not more than 2.0. According to the method, the ion-beam sputtering depositing method is adopted, two binary complex targets which are Sb/Te and Bi/Te are used as sputtering target materials, the area proportions of the two target materials and the ion-beam sputtering parameters are controlled, and the high-temperature in situ heat treatment is carried out in the same vacuum environment to prepare the Bi[2-x]SbxTe3 thermoelectric film. The method has the advantages of simple process, good repeatability and high utilization rate of raw materials. Due to the adoption of the method, the high-precision controllable doping of elements of the Bi[2-x]SbxTe3 thermoelectric film can be realized, the structure of the Bi[2-x]SbxTe3 thermoelectric film can be optimized effectively, and the thermoelectric properties can be improved.

The invention relates to the coating technique, in particular to an Al/Al2O3/MCrAlY composite coating used in Ti-Al alloy and a preparation method thereof, which aims at improving the high-temperature oxidation resistance of the Ti-Al alloy, guaranteeing the serviceability of the Ti-Al alloy in the high-temperature environment and solving the problem of non-matching between the MCrAlY coating and the Ti-Al alloy and is used for the high-temperature protection of the Ti-Al alloy. The composite coating comprises an Al/Al2O3 diffusion impervious layer and an MCrAlY alloy protective coating which are deposited on a substrate of the alloy in sequence; the thickness ratio among an Al film, an Al2O3 film and the MCrAlY protective coating is (1 to 5): (1 to 5): (20 to 50); in the MCrAlY alloy, M indicates Ni, Co or Ni plus Co. The arc ion plating technique is adopted to deposit the Al/Al2O3 diffusion impervious layer and then the MCrAlY coating on the substrate of the alloy. The composite coating of the invention has good high-temperature oxidation resistance as well as good bonding strength and high-temperature stability and can provide good high-temperature protection to the Ti-Al alloy.

A method of mass spectrometry is disclosed comprising providing a flight region for ions to travel through and a detector or fragmentation device. A potential profile is maintained along the flight region such that ions travel towards the detector or fragmentation device. The potential at which a first length of the flight region is maintained is then changed from a first potential to a second potential whilst at least some ions are travelling within the first length of flight region. The changed potential provides a first potential difference at an exit of the length of flight region, through which the ions are accelerated as they leave the length of flight region. This increases the kinetic energy of the ions prior to them reaching the detector or fragmentation cell.

A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3% oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO₂ composition.

The present invention discloses a system and method for generating a beam of fast ions. The system comprising: a target substrate having a patterned surface, a pattern comprising nanoscale pattern features oriented substantially uniformly along a common axis; and; a beam unit adapted for receiving a high power coherent electromagnetic radiation beam and providing an electromagnetic radiation beam having a main pulse and a pre-pulse and focusing it onto said patterned surface of the target substrate to cause interaction between said radiation beam and said substrate enabling creation of fast ions.

A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.

An ion implantation system, including an ion source and extraction system, arranged to generate an ion beam at a first energy, and a linear accelerator, disposed downstream of the ion source, the linear accelerator arranged to receive the ion beam as a bunched ion beam accelerate the ion beam to a second energy, greater than the first energy. The linear accelerator may include a plurality of acceleration stages, wherein a given acceleration stage of the plurality of acceleration stages comprises: a drift tube assembly, arranged to conduct the ion beam; a resonator, electrically coupled to the drift tube assembly; and an RF power assembly, coupled to the resonator, and arranged to output an RF signal to the resonator. As such, the given acceleration stage does not include a quadrupole element.

The energy of positive ions accelerated in laser-matter interaction experiments can be significantly increased by providing a plurality of laser pulses, e.g., through the process of splitting the incoming laser pulse, to form multiple laser-matter interaction stages. From a thermodynamic point of view, the splitting procedure can be viewed as an effective way of increasing the efficiency of energy transfer from the laser light to positive ions, which energy peaks for processes having the least amount of entropy gain. A 100% increase in the energy efficiency is achieved for a six-stage laser positive ion accelerator compared to a single-stage laser positive ion accelerator.

The invention relates to an etching method of an opening with a high depth-to-width ratio and a semiconductor device. The etching method of an opening with a high depth-to-width ratio comprises the step of dry-etching a dielectric layer by using a feed gas including an etching gas, an oxygen source gas and an inert carrier gas to form an opening, wherein the flow proportion of the inert carrier gas in the feed gas is 4-21%.

The invention discloses a CrAlN thermal insulation coating for an aluminum alloy piston combustor surface and a preparation method thereof. The CrAlN thermal insulation coating comprises a transitionlayer and a thermal insulation layer from the inside out in order, the transition layer is a CrAl coating, and the thermal insulation layer is a CrAlN coating. The method adopts filtered cathodic vacuum arc technique, takes a CrAl alloy target material (Cr, Al metal target) as the cathode, performs deposition of the CrAl coating on the aluminum alloy surface to form a transition layer, then uses nitrogen as the working gas, and coats the transition layer surface with the CrAlN coating evenly to form the thermal insulation layer. The CrAlN thermal insulation coating provided by the invention not only solves the problem of poor binding force and bearing ability caused by large difference of basic physical properties between the CrAlN coating and the aluminum alloy substrate material, also the coating is uniform and compact, has good film-substrate combination state and hardness up to 40GPa, and shows good high temperature thermal insulation properties and thermal shock resistance in piston thermal load test. The CrAlN thermal insulation coating provided by the invention significantly improves the performance reliability and service life of the aluminum alloy piston, and can meet thehigh power and low emission development requirements of modern engines.

The invention belongs to the technical field of plasma sources, and particularly relates to a high-efficiency low-pollution plasma source which comprises a cathode, a water-cooled anode and a magnet yoke base which are coaxially arranged, inner magnetic steel arranged at the center of the magnet yoke base, an inner shield which sleeves the inner magnetic steel, and outer magnetic steel and an outer shield which are fixedly mounted above the outer edge of the magnet yoke base, the magnet yoke base is positioned in the cathode; the water-cooled anode is connected with the cathode in an insulating manner; the magnetic force directions of the inner magnetic steel and the outer magnetic steel are opposite; and a discharge power supply A is connected between the cathode and the water-cooling anode. The inner magnetic pole and the outer magnetic pole of the plasma source are located at the suspension potential or different bias voltages are applied to a workpiece or a vacuum chamber respectively, and the potential is distributed by designing a discharge channel, so that self-sputtering of discharge plasma to the wall can be reduced and controlled, and the purposes of improving the utilization rate of discharge current and leading out ion energy are achieved.

The invention relates to an atmosphere plasma jet generation device with a hollow substrate and electrodes. The atmosphere plasma jet generation device comprises a DC discharge unit and a power supply used for supplying a discharge voltage to the DC discharge unit. The DC discharge unit comprises an air guide pipe and an electrode set. The electrode set comprises the cylindrical high-voltage electrode and the grounding electrode. The air guide pipe is a hollow pipe. The upper end and the lower end of the air guide pipe are provided with an air inlet port and an air outlet port respectively. The high-voltage electrode is arranged at the center of the air guide pipe in the axial direction. A hollow metal substrate unit used for forming a narrow airflow channel is further arranged at the grounding electrode. The hollow metal substrate unit is a cylinder and is provided with a through hole in the axial direction. The atmosphere plasma jet generation device with the hollow substrate and the electrodes is simple in operation process and low in running cost.

The invention discloses a vacuum decoration coating technique of a high polymer material product, which comprises the following steps: product surface cleaning, product surface plasma activation, Cr layer plating by high-power magnetron sputtering, fine arc ion plating of functional layer, and high-power magnetron sputtering of protective layer. The film prepared by the technique mainly comprises a Cr base layer, an ion plating functional layer and an oxide protective layer. The technique is used for substituting electroplating treatment, avoids the pollution of three wastes, enhances the added value of the high polymer product, and can provide more colors and appearances.

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.