Method for preparing bismuth, antimony and telluride base thermoelectric film

Abstract

The invention discloses a method for preparing a bismuth, antimony and telluride base thermoelectric film and particularly relates to a Bi[2-x]SbxTe3 base thermoelectric film. In the Bi[2-x]SbxTe3, x is not less than 0.1 and not more than 2.0. According to the method, the ion-beam sputtering depositing method is adopted, two binary complex targets which are Sb/Te and Bi/Te are used as sputtering target materials, the area proportions of the two target materials and the ion-beam sputtering parameters are controlled, and the high-temperature in situ heat treatment is carried out in the same vacuum environment to prepare the Bi[2-x]SbxTe3 thermoelectric film. The method has the advantages of simple process, good repeatability and high utilization rate of raw materials. Due to the adoption of the method, the high-precision controllable doping of elements of the Bi[2-x]SbxTe3 thermoelectric film can be realized, the structure of the Bi[2-x]SbxTe3 thermoelectric film can be optimized effectively, and the thermoelectric properties can be improved.

Description

technical field [0001] The invention relates to the field of thermoelectric functional materials, in particular to a method for preparing a high-performance bismuth-antimony-tellurium-based thermoelectric thin film. Background technique [0002] With the increasingly serious energy crisis, it is urgent to actively promote and promote the use of clean renewable energy, especially the combination of new technology development and industrialization investment in renewable energy to reduce the cost of renewable energy utilization. Thermoelectric devices can realize mutual conversion between thermal energy and electric energy, and are green and environmentally friendly energy devices with a wide range of applications. Semiconductor generators and refrigerators made of semiconductor thermoelectric power generation modules can generate electricity as long as there is a temperature difference, and can be used for cooling when supplying power. They work without noise and pollution, a...

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Problems solved by technology

In the existing reports, the most commonly used methods for preparing thermoelectric thin films are evaporation and electrochemical deposition. The thin films prepared by the evaporation method have a high power factor, but the thin film prepared by the evaporation method has poor adhesion and the material utilization The efficiency is low, which is a big waste and high cost for rare earth metals, and is not suitable for large-scale production of thermoelectric thin films; the electrochemical deposition method is conducive to reducing the preparation cost due to its simple preparation and low cost, but due to the thin film prepared under non-vacuum conditions , has higher requirements on reaction conditions, is prone to side effects, and is difficult to obtain high-quality films

The sputtering method is one of the most widely used methods for preparing thin films in industrial production. Whether it can prepare high-performance thermoelectric thin films has attracted the attention of many people. In the existing reports, magnetron sputtering and radio frequency sputtering methods are used to prepare The thin film has good adhesion, the preparation method is simple, and the material utilization rate is high. However, because Te with high saturated vapor pressure and Bi with low melting point are difficult to be well controlled in the sputtering process, the thin film elements prepared by alloy target The atomic ratio is different from that of the target, and the uniformity of the film is poor, making it difficult to obtain a high-performance thermoelectric film

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