An
electron beam apparatus for providing an evaluation of a sample, such as a
semiconductor wafer, that includes a micro-pattern with a minimum
line width not greater than 0.1 μm with high
throughput. A primary
electron beam generated by an
electron gun is irradiated onto a sample and
secondary electrons emanating from the sample are formed into an image on a
detector by an image projection optical
system. An
electron gun 61 has a
cathode 1 and a drawing
electrode 3, and an electron emission surface 1a of the
cathode defines a
concave surface. The drawing
electrode 3 has a convex surface 3a composed of a partial outer surface of a second sphere facing the electron emission surface 1a of the
cathode and an aperture 73 formed through the convex surface for passage of the electrons. An aberration correction optical apparatus comprises two identically sized multi-polar Wien filters arranged such that their centers are in alignment with a 1 / 4 plane position and a ¾ plane position, respectively, along an object plane-
image plane segment in the aberration correction optical apparatus, and optical elements having bidirectional focus disposed in an object plane position, an
intermediate image-formation plane position and an
image plane position, respectively, in the aberration correction optical apparatus.