The invention provides an aluminum
nitride single crystal growth device and method based on near-suspended seed crystals, and the device and method are characterized in that after
metal or a
metal compound is deposited on the aluminum
nitride single crystal seed crystals to form coated seed crystals, a high-temperature-resistant
metal strip is bound on the surfaces of the coated seed crystals, so that the coated seed crystals suspend in the device; according to the invention, the
coating seed crystal does not directly contact with the
crucible wall, the mechanical stress between the
coating seed crystal and the
crucible wall is reduced, the
stress concentration is further reduced, the
heat resistance and the stability of the material are improved, the defect density in the
crystal is obviously reduced, and a better thermal management effect is shown in a high-temperature environment. Besides, by accurately controlling the position and the
temperature gradient of the coated
seed crystal in the
crucible, the seed
crystal grows in a nearly suspended state, and the growth rate is stable, so that the growth environment of the
crystal is greatly optimized, the aluminum
nitride single crystal grows more close to a
free state, and defects caused by fluctuation of growth conditions are avoided. According to the device and the method, the growth quality of the aluminum nitride single crystal is remarkably improved, the defect density is reduced, and the device and the method can be widely applied to growth of the high-quality aluminum nitride single crystal, are suitable for the fields of deep
ultraviolet LEDs, lasers, high-power
microwave devices, high-temperature electronic devices and the like, and are suitable for industrial popularization.