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Aluminum nitride porous ceramic and preparation method thereof

A technology of porous ceramics and aluminum nitride, which is applied in the field of aluminum nitride porous ceramics and its preparation, can solve the problems of high preparation cost and complex production process, and achieves low preparation cost, simple production process, superior economy and reliability. Effect

Inactive Publication Date: 2010-06-16
XI AN JIAOTONG UNIV
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Problems solved by technology

The disadvantage of the direct nitriding method is that it is necessary to use metal aluminum powder as the main raw material to make a porous molded body first, which leads to a complicated production process. higher

Method used

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  • Aluminum nitride porous ceramic and preparation method thereof
  • Aluminum nitride porous ceramic and preparation method thereof
  • Aluminum nitride porous ceramic and preparation method thereof

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Embodiment Construction

[0020] The present invention will be further described in detail below in conjunction with specific examples.

[0021] The composition of aluminum nitride porous ceramics is shown in Table 1. In Examples 1-21 shown in Table 1, the average particle size of alumina is generally controlled at 0.2-2 μm. If it is less than 0.2 μm, the powder is easy to agglomerate , It is not conducive to the carbothermal reduction reaction, and the aluminum nitride porous ceramics formed larger than 2 μm have too high porosity, coarse grains, and reduced mechanical properties. Therefore, the average particle size of alumina is preferably controlled between 0.2 and 2 μm.

[0022] The mass ratio of alumina to carbon black is preferably 2-4, if it is greater than 4, alumina will remain in the sintered body. The heat resistance and corrosion resistance of the obtained porous ceramics will be reduced; if it is less than 2, carbon will remain in the sintered body, which will affect the mechanical prope...

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Abstract

The invention discloses an aluminum nitride porous ceramic and a preparation method thereof. The aluminum nitride porous ceramic comprises the following components by weight percent: 60-72 percent of aluminum oxide, 1-10 percent of sintering assistant, 18-30 percent of carbon black and 1-10 percent of aluminum nitride seed crystal. The preparation method comprises the following steps of: carrying out ball milling mixture on the components with a wetting method to obtain mixed powder; carrying out mould pressing on the components for forming; placing a forming body into an atmosphere furnace, heating the forming body to 1650-1750 DEG C when the nitrogen pressure is higher than one pressure atmosphere and keeping the temperature for 1-4 hours to obtain a sintering body. The aluminum oxide and the carbon black with low cost are used as raw materials to prepare the aluminum nitride porous ceramic with high porosity, therefore, the invention can overcome the defects of the complicated process of preparing the aluminum nitride porous ceramic by using the traditional method and the excessive cost, and can be widely applied in photoelectricity fields of high-temperature electronic devices, microwave integrated circuits, mixed integrated circuits, power electronic modules, laser diodes and the like as well as reinforced phases of metal-based composite materials.

Description

technical field [0001] The invention relates to a porous ceramic and a preparation method thereof, in particular to an aluminum nitride porous ceramic and a preparation method thereof. Background technique [0002] In recent years, the study of porous semiconductor materials has aroused great interest among scientists. Porous III-V compound semiconductor materials exhibit many new and rather interesting properties, due to the porous structure, the intensity of their photoluminescence, the quantum effect of the photoresponse, the second harmonic oscillation are all significantly enhanced, and the light The properties of both scattering and light refraction are significantly changed. Porous aluminum nitride material, as a typical III-V covalent compound, has a wide bandgap semiconductor material with a direct band gap. It has high thermal conductivity, good high-temperature insulation and dielectric properties, and high thermal shock resistance. At high temperatures, the mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B38/00C04B35/622
Inventor 杨建锋鲁元陆伟忠刘荣臻乔冠军王红洁
Owner XI AN JIAOTONG UNIV
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