High-temperature electronic packaging substrate material device based on gas-liquid phase change and preparation method thereof

Abstract

The invention relates to a high-temperature electronic packaging substrate material device based on gas-liquid phase change and a preparation method thereof. The device comprises a substrate shell forming a closed cavity, a porous medium which covers the inner wall of the substrate shell and is provided with a gas flow channel, and a liquid filling port which is formed in the substrate shell and is connected with the porous medium, a power device is further arranged on the upper surface of the substrate shell, and a liquid working medium capable of generating gas-liquid phase change after being heated is infiltrated in the porous medium. Compared with the prior art, the novel packaging substrate material developed by the invention can meet the requirements of high-power third-generation semiconductor chip-level and module-level high-temperature packaging, namely, reliable packaging can be carried out at the high temperature of 400 DEG C, in addition, the ultrathin packaging substrate shell can be realized, and the heat transfer resistance is reduced; and stress and the like caused by uneven temperature distribution and mismatching of thermal expansion coefficients in a high-temperature working state can be reduced.

Description

technical field

[0001] The invention belongs to the technical field of high-temperature packaging of power devices, and relates to a high-temperature electronic packaging substrate material device based on gas-liquid phase transition and a preparation method thereof. Background technique

[0002] High-power third-generation semiconductor devices are of great value in many major national strategic security fields. However, with the continuous improvement of the integration, functionality and power density of semiconductor devices, people put forward new requirements for the third generation of semiconductor devices, that is, not only to solve the high heat flux heat dissipation requirements, but also to withstand high temperature working environment. The first problem to be solved is the high-temperature packaging of power devices. It is required that the prepared packaging substrate materials not only meet the high-temperature packaging requirements, but also have the charac...

Examples

preparation example Construction

[0047] In addition, the present invention also proposes a method for preparing a high-temperature electronic packaging substrate material device based on gas-liquid phase transition, including the following steps:

[0048] (1) The upper shell 2 and the lower shell 3 with a symmetrical structure that can form the airtight cavity 6 are prepared by mechanical processing;

[0049] (2) Paste the porous medium 5 on the inner wall surfaces of the upper casing 2 and the lower casing 3;

[0050] (3) Carrying out surface modification treatment to the porous medium 5, so that it has a super-wetting surface;

[0051] (4) sealing the upper shell 2 and the lower shell 3 after assembling, and obtaining the substrate shell 9 with the airtight cavity 6;

[0052] (5) Process the liquid filling pipe 1 connected to the porous medium 5 on the substrate housing 9, and fill the liquid working medium into the porous medium 5, and then seal the liquid filling pipe 1 after vacuuming;

[0053] (6) Mou...

Embodiment 1

[0061] A high-temperature electronic packaging substrate material based on gas-liquid phase change heat transfer, its structure please refer to Figure 1-Figure 3 , Figure 5 etc., its preparation method is as follows:

[0062] Step 1, shell molding: the upper shell 2 and the lower shell 3 with support columns 14 and symmetry planes 13 are prepared from a molybdenum-copper alloy plate (MoCu15) with a thickness of 1.5 mm by machining.

[0063] Step 2. Cleaning of the inner and outer surfaces of the substrate shell material: First, use acetone and ultrasonic cleaning to remove impurities such as organic matter and particulate matter remaining on the surface of the substrate material shell (time: 30 minutes); then use cathodic degreasing to completely clean the shell. Grease on the surface of the body (time: 20s); then use ammonia solution to remove molybdenum oxide on the surface (time: 10s), and use dilute sulfuric acid to remove surface copper oxide (time: 10s); finally rinse...

Embodiment 2

[0076] In this embodiment, the thermal expansion rate of the high-temperature electronic packaging substrate based on gas-liquid phase change heat transfer can be coordinated and regulated through the thermal expansion performance of the shell material itself and the uniform temperature performance of the rapid diffusion of gas-liquid phase change. The rate-controllable electronic packaging substrate material is processed into housings of different sizes (square, circular, rectangular, with a thickness of 1-3mm), and the rest are the same as in Embodiment 1.

technical field

[0001] The invention belongs to the technical field of high-temperature packaging of power devices, and relates to a high-temperature electronic packaging substrate material device based on gas-liquid phase transition and a preparation method thereof. Background technique

[0002] High-power third-generation semiconductor devices are of great value in many major national strategic security fields. However, with the continuous improvement of the integration, functionality and power density of semiconductor devices, people put forward new requirements for the third generation of semiconductor devices, that is, not only to solve the high heat flux heat dissipation requirements, but also to withstand high temperature working environment. The first problem to be solved is the high-temperature packaging of power devices. It is required that the prepared packaging substrate materials not only meet the high-temperature packaging requirements, but also have the charac...

Examples

preparation example Construction

[0047] In addition, the present invention also proposes a method for preparing a high-temperature electronic packaging substrate material device based on gas-liquid phase transition, including the following steps:

[0048] (1) The upper shell 2 and the lower shell 3 with a symmetrical structure that can form the airtight cavity 6 are prepared by mechanical processing;

[0049] (2) Paste the porous medium 5 on the inner wall surfaces of the upper casing 2 and the lower casing 3;

[0050] (3) Carrying out surface modification treatment to the porous medium 5, so that it has a super-wetting surface;

[0051] (4) sealing the upper shell 2 and the lower shell 3 after assembling, and obtaining the substrate shell 9 with the airtight cavity 6;

[0052] (5) Process the liquid filling pipe 1 connected to the porous medium 5 on the substrate housing 9, and fill the liquid working medium into the porous medium 5, and then seal the liquid filling pipe 1 after vacuuming;

[0053] (6) Mou...

Embodiment 1

[0061] A high-temperature electronic packaging substrate material based on gas-liquid phase change heat transfer, its structure please refer to Figure 1-Figure 3 , Figure 5 etc., its preparation method is as follows:

[0062] Step 1, shell molding: the upper shell 2 and the lower shell 3 with support columns 14 and symmetry planes 13 are prepared from a molybdenum-copper alloy plate (MoCu15) with a thickness of 1.5 mm by machining.

[0063] Step 2. Cleaning of the inner and outer surfaces of the substrate shell material: First, use acetone and ultrasonic cleaning to remove impurities such as organic matter and particulate matter remaining on the surface of the substrate material shell (time: 30 minutes); then use cathodic degreasing to completely clean the shell. Grease on the surface of the body (time: 20s); then use ammonia solution to remove molybdenum oxide on the surface (time: 10s), and use dilute sulfuric acid to remove surface copper oxide (time: 10s); finally rinse...

Embodiment 2

[0076] In this embodiment, the thermal expansion rate of the high-temperature electronic packaging substrate based on gas-liquid phase change heat transfer can be coordinated and regulated through the thermal expansion performance of the shell material itself and the uniform temperature performance of the rapid diffusion of gas-liquid phase change. The rate-controllable electronic packaging substrate material is processed into housings of different sizes (square, circular, rectangular, with a thickness of 1-3mm), and the rest are the same as in Embodiment 1.

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