Release method of residual compression stress in nanocrystalline cubic boron nitride pellicle

A technology of cubic boron nitride and compressive stress, applied in gaseous chemical plating, ion implantation plating, coating, etc., can solve environmental pollution and other problems, and achieve the effect of mild environment, simple equipment and high hardness

Active Publication Date: 2009-10-28
杭州天柱科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the second method improves the cubic phase purity of the film (>90%) and reduces the residual compressive stress of the film, it pollutes the environment due to the use of fluorine.

Method used

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  • Release method of residual compression stress in nanocrystalline cubic boron nitride pellicle

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The cubic boron nitride thin film deposited on the single crystal silicon substrate by PECVD method (the thickness of the non-cubic phase layer in the initial stage of the film is ~ 7nm, and the thickness of the cubic phase layer is 100nm) is put into the heating chamber and evacuated to 10 -6 Torr, then charged with H 2 , to evacuate the heating chamber to 10 -4 Torr, the heating chamber was heated to 1200°C for 2 hours and then cooled to room temperature. The residual compressive stress of the example cubic boron nitride film was reduced from ~6GPa to less than 4GPa. figure 1 Shown is its high-resolution electron microscope photo. It can be seen from the figure that the cubic boron nitride film still maintains a typical layered structure.

[0019] The cubic boron nitride film was stored in the air for more than 10 months without peeling off from the substrate. However, the cubic boron nitride film that has not undergone this treatment begins to peel off after being...

Embodiment 2

[0021] Put the cubic boron nitride film deposited on the silicon carbide substrate by PECVD method (the thickness of the non-cubic phase layer in the initial stage of the film is ~500nm, and the thickness of the cubic phase layer is 100nm), put it into the heating chamber and evacuate it to 10 -7 Torr, then charge N 2 , to evacuate the heating chamber to 10 -4 Torr, the heating chamber was heated to 1150°C for 3 hours and then cooled to room temperature. The residual compressive stress of the cubic boron nitride film in this example was reduced from ~5GPa to less than 3GPa. The cubic boron nitride film was stored in the air for more than 10 months without peeling off from the substrate. The cubic boron nitride film without this treatment began to peel off after being stored in the air for 2 days.

Embodiment 3

[0023] The cubic boron nitride film deposited on the sapphire substrate by PECVD method (the thickness of the non-cubic phase layer in the initial stage of the film is ~ 10nm, and the thickness of the cubic phase layer is 200nm) is placed in a heating chamber and evacuated to 10 -7 Torr, then filled with Ar, the heating chamber was evacuated to 10 -5 Torr, the heating chamber was heated to 1250°C for 2 hours and then cooled to room temperature. The residual compressive stress of the cubic boron nitride film in this example was reduced from ~6GPa to less than 4GPa. The cubic boron nitride film was stored in the air for more than 10 months without peeling off from the substrate. However, the cubic boron nitride film without this treatment began to peel off after being stored in the air for 1 hour.

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Abstract

The invention discloses a release method of residual compression stress in a nanocrystalline cubic boron nitride pellicle. The cubic boron nitride pellicle is put in a heating chamber that is first vacuumized to at least 10Torr and kept with invariable vacuum degree, or vacuumized to at least 10Torr after protective gas is filled in and subsequently heated up to between 1000-1300 DEG C with the temperature kept for 1-5h and then cooled to room temperature. The method can be applied to releasing the residual compression stress of the cubic boron nitride pellicle deposited on various substrates without changing the composition, structure and surface topography of the cubic boron nitride pellicle, thus greatly improving the bonding force of the cubic boron nitride pellicle on various substrates and leading the cubic boron nitride pellicle to be applied not only to preparing a cutter, sharper and the like for processing iron-based alloy, but also to the fields of protective film of optical elements, high temperature electronic devices and the like.

Description

technical field [0001] The invention relates to a method for releasing residual compressive stress in a nanocrystalline cubic boron nitride film. Background technique [0002] The Vickers hardness of cubic boron nitride film reaches 5000-6000kg / mm 2 , the hardness in nature is second only to diamond, because the cubic boron nitride film does not react with iron-based alloys and oxygen in the air even at a high temperature of 1100 ° C, it is expected to become an ideal tool material for processing steel products (diamond at temperature When it reaches 700°C, it begins to chemically react with iron and oxygen, which is not suitable for processing steel materials). In addition, the cubic boron nitride film is transparent in the infrared and visible regions, has a band gap of 6.4eV, is easy to do p-type and n-type doping, and has high thermal conductivity. It can also be widely used in the protective film of optical components, the automatic control of ultra-high-power machine...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/56C23C16/34C23C16/44C23C14/58C23C14/06C23C14/34
Inventor 杨杭生
Owner 杭州天柱科技有限公司
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