84results about How to "Improve sputtering efficiency" patented technology

A magnetron sputtering apparatus is composed of a vacuum chamber (10), a target (15), a substrate (13), an anode (14) for supporting the substrate (13) that is disposed in the vacuum chamber, a cathodic body (16) for supporting the target (15) that is allocated so as to confront with the anode (14) and a magnetic field generating section (50) for generating a magnetic field on a surface of the target (15) that is allocated in neighborhood of one side of the cathodic body (16) opposite to the target (15). The target (15) is in a shape of square flat plate. The magnetic field generating section (50) is further composed of a yoke (51) in flat plate corresponding to the target (15), a first permanent magnet (52) in rectangular parallelepiped that is disposed in the middle of the yoke (51) and second and third permanent magnets (53, 54) in rectangular parallelepiped that are disposed in both end portions of the yoke (51) respectively. The magnetron sputtering apparatus is further composed of a driving unit (56) for swinging the magnetic field generating section (50) within a prescribed angle with centering a line as an axis of rotation, wherein the line passes through an approximate center (56) of the yoke (51) and is perpendicular to magnetic flux lines of the magnetic field and in parallel with the target (15).

The invention relates to a sputter target and more particularly to a zinc sputter target. The target comprises a target holder having an outer surface and a target material formed on said outer surface. The target material has a relative density higher than 92% of the theoretical density of the metal or metal alloy. Furthermore the invention relates to a process for the manufacturing of a sputter target.

The invention relates to vacuum coating magnetron sputtering deposition technology, and particularly a device and a method for depositing a film on a SiC fiber surface; on one hand, a film with a uniform thickness is deposited on a continuous SiC fiber surface; on the other hand, the problem of target material poisoning of compound film deposition is solved, and the continuity and stability of the deposition process is realized. The device is provided with a target material I, a target material II, a workpiece rotating shelf, an intermediate-frequency pulsed magnetron sputtering power supply, a magnetron sputtering vacuum chamber; the workpiece rotating shelf is disposed in the magnetron sputtering vacuum chamber; the target material I and the target material II are facingly disposed inside and outside the workpiece rotating shelf in the magnetron sputtering vacuum chamber; a cathode of the intermediate-frequency pulsed magnetron sputtering power supply is connected to the target material I; and an anode of the intermediate-frequency pulsed magnetron sputtering power supply is connected to the target material II. According to the invention, the gas flow, the reaction gas types, the sputtering time and the like in the vacuum chamber of the magnetron sputtering device are adjusted so as to realize the deposition of metals or compound films with different types and different thicknesses on a continuous SiC fiber surface, and to realize the surface modification of the SiC fiber.

The present invention provides a rotating target, which includes a target body, a backing tube, and a joint, the joint is arranged between the target body and the backing tube, and the joint includes a A compressible structure and an electrically and thermally conductive adhesive, the compressible structure is a compressible blanket or a compressible sheet. Using the adapter to join the target body and the backing tube can not only help to simplify the process of rotating the target, but also can improve the sputtering power resistance of the rotating target while maintaining the bonding strength between the target body and the backing tube. Acceptance, thereby improving its sputtering efficiency.

The invention discloses fiber surface interface layer deposition equipment and method. The equipment comprises a filament release device, an electrostatic filament scattering device, a magnetron sputtering device, a solid adhesive device and a filament collecting device. The filament collecting device and the filament release device are positioned on two sides of the magnetron sputtering device, the electrostatic filament scattering device is positioned between the filament release device and the magnetron sputtering device, and the solid adhesive device is positioned between the filament collecting device and the magnetron sputtering device. When the equipment is in operation, fiber bundles are released from the filament release device, then move to the electrostatic filament scattering device to be scattered, enter the magnetron sputtering device in a scattered state and are bundled by the solid adhesive device after an interface layer is obtained through magnetron sputtering deposition, and the fiber bundles are finally collected by the filament collecting device. The SiC fiber surface interface layer obtained according to the preparation method is uniform in thickness distribution, controllable in thickness and low in fiber damage and is a quasi-graphene structure weak interface layer, and mechanical performances of composite materials can be remarkably improved.

The invention discloses a self-adaptive magnetic field adjustment type magnetic-controlled sputter coating device. An electrified coil is arranged between adjacent permanent magnets; a hall sensor is arranged between the electrified coil and a magnet yoke; a length direction of the electrified coil is vertical to directions of magnetic poles of the permanent magnets; a magnetic field strength detecting system is externally connected with the hall sensor and applied to real-time monitoring of the magnetic field strength; a circuit control module is externally connected with the electrified coil and electrically connected with the magnetic field strength detecting system; current flowing through the electrified coil is adjusted according to data of the magnetic field strength detecting system, so that magnetic field distribution is changed and the magnetic field is in a most optimized state all the time, namely, magnetic force lines and a target surface are located on the same plane to the greatest extent, so that the effect of a maximum utilization rate of target material is achieved; meanwhile, the magnetic field strength can be monitored in real time and adjusted without the need of interrupting the coating process, so that the production efficiency is high.

The sputtering fixture proposed by the present invention includes a pyrolytic adhesive layer, an upper backing paper, and a lower backing paper. When the sputtering fixture is used for sputtering, the upper backing paper is torn off, and the bottom surface of the chip that does not need to be sputtered is pasted on the bottom surface of the sputtering fixture. On the pyrolytic glue layer, the pyrolytic glue layer can firmly fix the chip at room temperature and during sputtering. After the sputtering is completed, the sputtering fixture is heated to a preset temperature, so that the pyrolytic glue The layer loses its stickiness, making it easy to separate the chip from the sputtering fixture. The invention can realize sputtering on five sides of the chip, and does not need positioning when pasting the chip, which simplifies the process of positioning the chip; at the same time, the chip can be easily peeled off without additional stripping process after sputtering, avoiding possible damage to the chip, The service life of the chip is guaranteed, the production cost is greatly reduced, and the sputtering efficiency is improved.

The invention discloses a opposite-target non-equilibrium magnetron spattering system with magnetic mirror field restriction, which is mainly used in technique field of surfacial project. It is characterized in that: Two electrified coaxial coils are set opposite two permanent-magnet magnetron targets. They can form a complete closed magnetic mirror field which is coaxial with magnetron targets. To control magnetic mirror field based on regulating current in coils, and adjust state, deposit parameter of discharging plasma subtly. Magnetic coils enhance cathode discharging, increase plasma derivation in cathode zone and advance plasma density in deposit zone. Applying coaxial magnetic mirror field to restrain plasma with adding coaxial coils can enlarge adjusting range of deposit parameter. Compared with routine magnetron spattering technique, non-equilibrium magnetron spattering technique has adjustable plasma state, high plasma leaving rate and high ion-atom arrival rate etc.

The invention discloses a method for preparing crystal TiO2 film with metal sputtering low temperature in the coating technical field, which comprises following steps: firstly, separately supplying argon gas and oxygen, respectively forming a local rich argon gas zone on the target material surface or a local rich oxygen zone near a substrate, secondly, sputtering titanium atoms of a metal titanium target in a metal sputtering mode, thirdly, folding induced type coupling radio frequency plasmas whose concentration grade is more than 10<11>cm-3 near the substrate, fourthly, ionizing or decomposing oxygen modules which are in the rich oxygen zone near the substrate in the induced type coupling radio frequency plasmas, generating oxygen ions and oxygen atoms, fifthly, enabling the oxygen ions and the oxygen atoms which are ionized or decomposed in the induced type coupling radio frequency plasmas to reach the substrate when in coating, taking part in reaction, and sixthly irradiating ion beams whose concentration is number milliampere/ square centimetre to the substrate when in coating. The method of the invention can prepare rutile type TiO2 film or ore titanium TiO2 film on a glass substrate with high speed and low temperature.

The invention discloses a method for preparing a high-coercivity sintered neodymium-iron-boron magnet through grain boundary diffusion, belonging to the technical field of rare earth permanent magnet materials. The method comprises the following steps: preparing a heavy rare earth-alloy element multilayer film on the surface of a sintered neodymium-iron-boron magnet by adopting a magnetron sputtering method, then carrying out a vacuum thermal diffusion treatment process, and finally carrying out tempering treatment to obtain the high-coercivity neodymium-iron-boron magnet, wherein the temperature of the thermal diffusion treatment process is 600-900 DEG C, and the time of the thermal diffusion treatment process is 3-10 h. According to the method disclosed by the invention, time required for sputtering the heavy rare earth-alloy element thin film is shortened, and the diffusion depth of the thin film is deeper; and compared with a pure rare earth element diffusion method, the method of the invention has the advantages that the film diffusion depth is deeper, and the coercive force of the sintered neodymium-iron-boron magnet can be further improved.

The invention discloses a physical vapor deposition device, which comprises a chamber body, a radio frequency coil, a faraday shielding element, a plurality of unsymmetrical pressure regulation units and a base, wherein a dielectric cylinder and a target arranged at the top of the dielectric cylinder are arranged in the chamber body; the target is connected with a direct current power supply; the radio frequency coil is arranged in the chamber body, and is arranged on the outer side of the dielectric cylinder in a sleeving manner to excite process gas introduced into the chamber body into plasmas; the faraday shielding element is arranged on the inner wall of the dielectric cylinder, and comprises a plurality of shielding fragments which are distributed along the circumferential direction of the dielectric cylinder at intervals; the shielding fragments are connected to the unsymmetrical pressure regulation units in a one-to-one correspondence way, so that unsymmetrical pressure values of the shielding fragments are regulated respectively; the base is arranged in the chamber body, and is used for placing a chip to be processed. According to the physical vapor deposition device, the etching rate and deposition rate of the faraday shielding element are substantially equal, so that the probability of pollution to a chamber can be reduced, and the service life of the faraday shielding element can also be prolonged.

The present invention relates to a sputtering target, wherein zinc sulfide and an oxide composed of indium oxide, zinc oxide and other trivalent positive elements A are used as main components, and the ratio of sulfur to all constituent components is 5 to 30 wt. %, the (111) peak intensity I1 of cubic ZnS measured by XRD and the (100) peak intensity I2 of hexagonal ZnS coexist and satisfy I1>I2. The object of the present invention is to provide a high-strength sputtering target capable of preventing the target from cracking when the target is manufactured or when a film is formed by sputtering, and a manufacturing method thereof, and to obtain a thin film for optical information recording media that is most suitable for use as a protective film, and to manufacture the same method.

The invention discloses a magnesium base alloy modulated thin film and a preparation method and application thereof. The magnesium base alloy modulated thin film comprises a magnesium base alloy modulated layer, a catalyst layer and a polymer layer which are sequentially arranged; and elemental composition of the magnesium base alloy modulated layer is MgxM1-x, wherein x is greater than 0.5 and less than 1, and M is at least one of Gd, Ti, Ni, Mn, Fe, Co, Y, Nb, Ru, Zr, Ca, Ba, La, and Sm. The magnesium base alloy modulated thin film has the advantages of simple preparation process, low cost,wider practicality range and the like, a hydrogen sensor made of the magnesium base alloy modulated thin film is high in response speed and high in sensitivity, is not required to be warmed and forced, potential safety hazards do not exist, and recycling further can be achieved. In addition, the thin film optical performance change further can be realized by adjusting technological parameters, a hydrogen induced discoloration thin film with a larger optical conversion interval is obtained, and the magnesium base alloy modulated thin film has larger application value in other fields as well.

The invention discloses a clamp for clamping workpieces. The clamp comprises a base positioned at the chamber bottom of a sputtering chamber, stationary shafts on the base, workpiece clamping plates positioned between adjacent two stationary shafts, workpiece clamping holes formed in the workpiece clamping plates and a transmission shaft positioned between the base and the chamber bottom of the sputtering chamber. As at least two different types of workpieces can be simultaneously clamped by the workpiece clamping holes in each workpiece clamping plate, different types of workpieces can be simultaneously sputtered, and the sputtering efficiency is improved.

The invention belongs to the technical field of film coating, and particularly relates to a film coating system for depositing metal on the plastic substrate surface on the basis of the glow dischargeprinciple. The film coating system comprises a box body, a motor and a bearing device; the bearing device is driven by the motor and comprises a lower supporting plate, a shear fork mechanism and anupper supporting plate, and the shear fork mechanism is composed of a group of material rods which are hinged to one another; one end of the bottom of the shear fork mechanism is hinged to the lower supporting plate, and a roller rotatably connected to the other end of the bottom of the shear fork mechanism can slide in a sliding groove formed in the lower supporting plate; the top of the shear fork mechanism is hinged to one end of the upper supporting plate, and the top of the shear fork mechanism is slidably connected with the other end of the upper supporting plate; each material rod comprises an upper material rod, a middle material rod and a lower material rod, and the middle material rods can relatively rotate; and a first air cylinder is used for pushing the roller to slide in thesliding groove. According to the film coating system for depositing the metal on the plastic substrate surface on the basis of the glow discharge principle, through cooperation of the shear fork mechanism and the material rods, a workpiece can rotate when sputtering coating is conducted, therefore, a coating film of the coated workpiece is uniform, and then the film coating effect of a sputteringcoating device is improved.

A magnetron sputter comprises a carrier, a magnet assembly, at least a middle magnetic ring, a target and at least a conducting magnetic ring. The magnet assembly is disposed on a carrying surface of the carrier comprising a permanent magnet and an external magnetic ring. The middle magnetic ring is disposed between the permanent magnet and the external magnetic ring of the magnet assembly. The target is disposed above the magnet assembly having a first surface which faces the carrying surface. The conducting magnetic ring is disposed on the first surface.

[Object] To achieve a compact point light source exhibiting multielement emission spectra with which multi elements can be simultaneously analyzed.

[Solving Means] The light source includes a glass vessel 40 containing He gas; a plurality of micro hollow pipes 11 that are cylindrical with a diameter of 1 mm or less and made of copper or a copper alloy; an anode mesh 32 provided at ends of the micro hollow pipes 11 with an insulating spacer 33 between the anode mesh 32 and the ends; a metal wire 14 provided in the micro hollow pipe 11, the metal wire being made of an element corresponding to a desired light-source spectrum.

A method of fabricating a sputtering target, a sputtering target fabricated by the method, and an organic light-emitting display apparatus fabricated by using the sputtering target. The sputtering target may be used for forming a thin film encapsulation layer. The sputtering target includes tin oxide as a main component, and a copper fluoride compound as a dopant.

The invention belongs to the technical field of thin film preparation, and relates to a method for preparing homoepitaxial MgO thin films on the two sides of a flexible Hastelloy base band with the two sides simultaneously plated with IBAD (ion beam assisted deposition)-MgO/SDP-Y2O3, in particular to a method for preparing double-sided homoepitaxial MgO thin films based on middle-frequency (MF) magnetron reactive sputtering. According to the method, symmetrically-structured vent holes in a gas dispersion tube are adopted and used for evenly dispersing mixed gas, and therefore the problem thatthe thin films which are prepared through middle-frequency magnetron reactive sputtering are nonuniform is solved. The vent holes are designed in a one-way manner, so that the surfaces of target materials do not make contact with oxygen directly, and metal targets are prevented from oxidizing. The sputtering efficiency is improved by means of the air inflow mode, and uniformity and consistency ofthe double-sided simultaneous-growing MgO thin films are advantageously guaranteed. Compared with a traditional high-cost and complicated-technology physical vapor deposition (PVD) method, according to middle-frequency automatic-extensional MgO, the cost of a buffer layer is reduced, the price-performance ratio of superconducting tapes is increased, and the deposition rate is high.