3results about How to "Improve sputtering efficiency" patented technology

The invention discloses IBAD equipment for preparing a superconducting tape MgO film layer, belongs to the technical field of superconducting material preparation equipment, and aims to solve the technical problems that existing IBAD equipment is low in MgO film layer preparation efficiency, poor in operation stability, dependent on manpower in detection and the like. The equipment comprises a vacuum system, a tape conveying system, an ion source system, a tape detection system and a control system, and all the systems work cooperatively: the vacuum system constructs a gradient vacuum environment in which a coating main cavity is 0.01-0.04 Pa and an ear cavity is less than or equal to 0.005 Pa, so as to prevent gas pollution; the belt conveying system adopts an integrated guide wheel and flange structure, tension closed-loop control and speed self-diagnosis compensation are combined, tension fluctuation is smaller than or equal to 3%, tension difference fluctuation is smaller than or equal to 5%, and forward and reverse rotation reciprocating coating is supported. According to the method, the preparation efficiency and quality of the MgO film layer are greatly improved, the process adaptability is high, the batch production requirement of the second-generation high-temperature superconducting REBCO strip is met, and the method is suitable for superconducting material preparation in a high-intensity magnetic field application scene.

The application discloses a high square resistance target material of oxidation-reduction coupling and synergic doping as well as a preparation method and application thereof. The preparation raw material of the high square resistance target material comprises indium oxide, silicon oxide, zirconium oxide, an oxide of a high-valence donor element and an oxide of an oxidation-reduction auxiliary element; wherein the high-valence donor element is selected from at least one of Nb, Ta and W; and the oxidation-reduction auxiliary element is selected from at least one of Ce and Pr. The target material body prepared by using the preparation raw material has a low resistivity of 1.8*10 ‑4 Ω*cm or below, and has a relatively high relative density, thereby effectively solving the problem of poor sputtering stability caused by the high resistivity of an In2O3-SiO2-ZrO2 target material body. In addition, the thin film prepared based on the target material has an initial square resistance of 10 8 Ω / □ or above, a transmittance of ≥97% under a wavelength of 550 nm, and excellent organic solvent resistance, and can be widely applied in the fields of display devices, touch panels and the like.

This utility model relates to the field of vacuum coating equipment technology, and discloses a vacuum coating equipment including a first rotating disk, a coating fixture, and a flipping mechanism. The first rotating disk is rotatably disposed around a first axis. The coating fixture includes a connecting rod, a second rotating disk, and a rotating component. The connecting rod is rotatably disposed on the first rotating disk around a second axis. The second rotating disk is connected to the connecting rod and is configured to rotate synchronously with the first rotating disk. The rotating component is rotatably disposed on the second rotating disk around a third axis and is used to place the sheet to be processed. The flipping mechanism is disposed between the rotating component and the first rotating disk. The flipping mechanism is used to drive the rotating component to rotate 180° around the third axis when the second rotating disk rotates one revolution around the second axis. The first axis, the second axis, and the axis of the first rotating disk are parallel to each other. Using the vacuum coating equipment of this application, the coating layer formed on the surface of the sheet to be processed is more uniform, and the sputtering efficiency of the target material is higher.