10results about How to "Improve sputtering efficiency" patented technology

The invention relates to a low-damage sputtering cathode and a sputtering coating method and relates to the technical field of sputtering coating, the sputtering cathode comprises a shell, a first magnetic ring, a first target material ring, a second magnetic ring and a second target material ring, the shell is annular, and a mounting plate is arranged at one end of the shell; the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are located in the shell and are all connected with the mounting plate; the first magnetic ring, the first target material ring, the second magnetic ring and the second target material ring are coaxially arranged, the first target material ring is arranged on the outer side of the first magnetic ring in a sleeving mode, the second target material ring is arranged on the outer side of the first target material ring in a sleeving mode, the second magnetic ring is arranged on the outer side of the second target material ring in a sleeving mode, and the inner side wall of the second target material ring and the outer side wall of the first target material ring are arranged in a spaced mode. When the sputtering cathode is used for sputter coating, the kinetic energy of sputtered particles can be reduced, so that the damage of the sputtered particles to a base material is reduced.

The invention discloses an evaporation magnetron sputtering target system for the inner wall of a special-shaped cavity, and relates to the field of high-energy pulse magnetron sputtering for sputtering coating of the inner wall of a superconducting acceleration cavity. The device comprises a vacuum mechanism suitable for loading a superconducting acceleration cavity, a magnetron sputtering target mechanism arranged in an inner cavity of the superconducting acceleration cavity, and a driving mechanism connected with the magnetron sputtering target mechanism. According to the invention, the lifting of the annular target material in the inner cavity of the superconducting acceleration cavity is realized, so that plasmas can discharge in a specified area in the inner cavity of the superconducting acceleration cavity to finish the coating of a corresponding area, and meanwhile, the power of a negative electrode power supply and the sputtering time of the annular target material can be controlled to realize uniform coating; the uniformity and the adhesion of the thickness of the thin film are favorably controlled; in addition, the driving mechanism has a large-stroke moving range, and the requirement for thin film evaporation of the multi-cell superconducting acceleration cavity can be met.

The invention relates to a glass manufacturing technology, in particular to an antireflection glass continuous magnetron sputtering process which comprises the following steps: carrying out magnetron sputtering on a first niobium oxide layer with the thickness of 12-15nm in a first vacuum chamber; the first niobium oxide layer is sequentially fed into a second vacuum chamber and a third vacuum chamber for magnetron sputtering, and the surface of the first niobium oxide layer is plated with a first silicon oxide layer with the total thickness being 35-37 nm; feeding the first silicon oxide layer into a fourth vacuum chamber, a fifth vacuum chamber, a sixth vacuum chamber and a seventh vacuum chamber in sequence for magnetron sputtering respectively, and plating a second niobium oxide layer with the total thickness of 115-127nm on the surface of the first silicon oxide layer; and the second niobium oxide layer is sequentially fed into an eighth vacuum chamber, a ninth vacuum chamber and a tenth vacuum chamber for magnetron sputtering, and the surface of the second niobium oxide layer is plated with a second silicon dioxide layer with the total thickness being 95-105 nm. The film system structure obtained by the process provided by the invention has a relatively wide broadband anti-reflection effect, and the application field is relatively wide. And multi-chamber continuous coating is adopted, so that the sputtering efficiency is improved by about 40%, and the production cost is reduced by about 30%.

The present invention relates to a hollow magnetron sputtering cathode, a magnetron sputtering coating device and a coating method, wherein the hollow magnetron sputtering cathode comprises a shielding shell, and a target barrel, a magnet unit and a water cooling unit arranged inside the shielding shell; the shielding shell is a hollow tubular structure; the target barrel is an annular structure with a hollow area inside, which is located on a side close to the central axis of the shielding shell; the magnet unit comprises at least three magnet groups, which are arranged in an array between a side of the target barrel away from the hollow area and the shielding shell; the water cooling unit nests the magnet unit. The hollow magnetron sputtering cathode provided by the present invention realizes uniform coating of the surface of multi-dimensional complex structural components by the magnetron sputtering cathode by arranging the target barrel, the magnet unit and the water cooling unit inside the shielding shell and designing the structure of each component and its positional relationship, thereby optimizing the cathode coating quality and improving the cathode coating efficiency.

The invention relates to a small and convenient oxygen isotope nuclear reaction target manufacturing process and device, a reaction target lining and a sputtering target material are arranged in a vacuum chamber of a magnetron sputtering target manufacturing device, a sputtering electric field is provided by adopting a radio frequency power supply, and the flow of argon and oxygen filled into the vacuum chamber and the pressure in the vacuum chamber are controlled; the chromium oxide film layer is sputtered on the reaction target lining at a stable rate to form a film, and the oxygen isotope nuclear reaction target is prepared. The content of nitrogen in the chromium oxide film layer prepared by the process is extremely low, the abundance of oxygen isotope reaches 70%, and the applicability of the film layer in nuclear reaction cross section measurement is greatly enhanced. The method has the remarkable advantages of efficient coating, excellent film quality, simplicity and convenience in operation, environment friendliness, energy conservation and the like. The magnetron sputtering device improves the sputtering efficiency and the power efficiency through the synergistic effect of a magnetic field and an electric field, and ensures uniform deposition and strong adhesive force of the film. The device is compact in structure, flexibly adapts to various target materials and process requirements, reduces environmental pollution and conforms to the green production concept.

The invention discloses IBAD equipment for preparing a superconducting tape MgO film layer, belongs to the technical field of superconducting material preparation equipment, and aims to solve the technical problems that existing IBAD equipment is low in MgO film layer preparation efficiency, poor in operation stability, dependent on manpower in detection and the like. The equipment comprises a vacuum system, a tape conveying system, an ion source system, a tape detection system and a control system, and all the systems work cooperatively: the vacuum system constructs a gradient vacuum environment in which a coating main cavity is 0.01-0.04 Pa and an ear cavity is less than or equal to 0.005 Pa, so as to prevent gas pollution; the belt conveying system adopts an integrated guide wheel and flange structure, tension closed-loop control and speed self-diagnosis compensation are combined, tension fluctuation is smaller than or equal to 3%, tension difference fluctuation is smaller than or equal to 5%, and forward and reverse rotation reciprocating coating is supported. According to the method, the preparation efficiency and quality of the MgO film layer are greatly improved, the process adaptability is high, the batch production requirement of the second-generation high-temperature superconducting REBCO strip is met, and the method is suitable for superconducting material preparation in a high-intensity magnetic field application scene.

The application discloses a high square resistance target material of oxidation-reduction coupling and synergic doping as well as a preparation method and application thereof. The preparation raw material of the high square resistance target material comprises indium oxide, silicon oxide, zirconium oxide, an oxide of a high-valence donor element and an oxide of an oxidation-reduction auxiliary element; wherein the high-valence donor element is selected from at least one of Nb, Ta and W; and the oxidation-reduction auxiliary element is selected from at least one of Ce and Pr. The target material body prepared by using the preparation raw material has a low resistivity of 1.8*10 ‑4 Ω*cm or below, and has a relatively high relative density, thereby effectively solving the problem of poor sputtering stability caused by the high resistivity of an In2O3-SiO2-ZrO2 target material body. In addition, the thin film prepared based on the target material has an initial square resistance of 10 8 Ω / □ or above, a transmittance of ≥97% under a wavelength of 550 nm, and excellent organic solvent resistance, and can be widely applied in the fields of display devices, touch panels and the like.

The invention discloses a thin film absorber for extreme ultraviolet light and a preparation method of the thin film absorber, and belongs to the technical field of extreme ultraviolet optical absorption elements. The thin film absorber comprises an absorption layer, a phase shift layer and an anti-reflection layer which are sequentially arranged on the extreme ultraviolet reflector or a protective layer of the extreme ultraviolet reflector; wherein the absorption layer is made of AgAl alloy, the thickness of the absorption layer is 18-22 nm, and the atomic percentage of Ag is 90%-98%; the phase shift layer is made of AlAg alloy, the thickness of the phase shift layer is 2-4 nm, and the atomic percent of Al is 95%-99%; the anti-reflection layer is Al2O3, and the thickness of the anti-reflection layer is 1-2 nm. The thickness of the whole film absorber can be controlled within 21-28 nm, the extreme ultraviolet reflectivity is lower than 1%, and the film absorber has remarkable advantages in the aspects of inhibiting the shadow effect, reducing light focusing offset and improving the imaging contrast ratio in a photoetching mask system. Meanwhile, the preparation method disclosed by the invention is simple, easy to regulate and control, low in cost and suitable for actual production and preparation.

The invention discloses a method for preparing a high-temperature-resistant tungsten coating on the surface of a stainless steel base material, and relates to the technical field of coating preparation on the surface of the base material, a direct-current magnetron sputtering mode is adopted for coating, and the method comprises the following steps that firstly, the base material directly faces a titanium target material, a bias power source and an HALL ion source are started, and plasma cleaning is conducted on the surface of the base material; secondly, after plasma cleaning is completed, a HALL power source is turned off, a direct-current magnetic control power source of the titanium target material is turned on, and titanium coating deposition is conducted; and (3) after the titanium coating is deposited, turning off the titanium target direct-current magnetic control power supply, enabling the base material to face the tungsten target material, and turning on the tungsten target material power supply to perform tungsten coating deposition. The intermediate metal film is introduced, the adhesion of the tungsten coating is improved, the tungsten coating with high purity and strong adhesive force is prepared on the surface of the stainless steel base material, the thickness of the high-temperature-resistant tungsten coating is controlled by adjusting magnetron sputtering process parameters, and then the high-temperature resistance of the 316 base material is improved.

This utility model relates to the field of vacuum coating equipment technology, and discloses a vacuum coating equipment including a first rotating disk, a coating fixture, and a flipping mechanism. The first rotating disk is rotatably disposed around a first axis. The coating fixture includes a connecting rod, a second rotating disk, and a rotating component. The connecting rod is rotatably disposed on the first rotating disk around a second axis. The second rotating disk is connected to the connecting rod and is configured to rotate synchronously with the first rotating disk. The rotating component is rotatably disposed on the second rotating disk around a third axis and is used to place the sheet to be processed. The flipping mechanism is disposed between the rotating component and the first rotating disk. The flipping mechanism is used to drive the rotating component to rotate 180° around the third axis when the second rotating disk rotates one revolution around the second axis. The first axis, the second axis, and the axis of the first rotating disk are parallel to each other. Using the vacuum coating equipment of this application, the coating layer formed on the surface of the sheet to be processed is more uniform, and the sputtering efficiency of the target material is higher.