Magnetic mirror field constrained bitarget non balancing magnetron sputtering method

Abstract

The invention discloses a opposite-target non-equilibrium magnetron spattering system with magnetic mirror field restriction, which is mainly used in technique field of surfacial project. It is characterized in that: Two electrified coaxial coils are set opposite two permanent-magnet magnetron targets. They can form a complete closed magnetic mirror field which is coaxial with magnetron targets. To control magnetic mirror field based on regulating current in coils, and adjust state, deposit parameter of discharging plasma subtly. Magnetic coils enhance cathode discharging, increase plasma derivation in cathode zone and advance plasma density in deposit zone. Applying coaxial magnetic mirror field to restrain plasma with adding coaxial coils can enlarge adjusting range of deposit parameter. Compared with routine magnetron spattering technique, non-equilibrium magnetron spattering technique has adjustable plasma state, high plasma leaving rate and high ion-atom arrival rate etc.

Description

technical field [0001] The invention belongs to the technical field of surface engineering, and in particular relates to a method for unbalanced magnetron sputtering with two targets constrained by a magnetic mirror field. A pair of opposite unbalanced magnetron sputtering targets with coaxial coils attached can be used in a larger Increase the density of the plasma in the deposition area and adjust the deposition parameters within a range. Background technique [0002] Magnetron sputtering deposition technology is used for material modification and film deposition in the field of surface engineering. In ordinary magnetron sputtering devices, a closed magnetic field on the surface of the cathode is used to generate plasma, in which ions bombard the cathode material under the action of the cathode voltage to form Sputtering effect, the formed deposition material ions and atoms diffuse to the surface of the workpiece to be plated to form a thin film. During the film deposition...

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Problems solved by technology

"Development and Status of Sputtering Deposition Technology" ("Journal of Vacuum Science and Technology" Vol.25, No.3, 2005) and "Progress and Application of Magnetron Sputtering Technology" ("Modern Instruments" No.5, 2005) The development and application of various magnetron sputtering deposition technologies are introduced. In ordinary magnetron sputtering devices, the plasma is confined by the magnetic field on the surface of the cathode. The density of the plasma in the deposition area is very low, and it is difficult to obtain an ideal plasma. state, the energy of the deposited particles is around a few electron volts, and the density of the plasma is further reduced sharply at 30-50 mm in front of the magnetron sputtering target

Due to the lack of ion bombardment, the deposited film has a large number of defects and stresses, which affects the performance of the film. Since the magnetic field structure of the magnetron sputtering device is an open space structure, the parameters can be adjusted in a small range

The current magnetron sputtering deposition technology has the technical shortcomings mentioned above. In order to solve these technical shortcomings, researchers have developed an unbalanced magnetron sputtering system with closed and magnetic fields. Although this unbalanced magnetron sputtering system has a magnetic field The magnetic field lines, but the permanent magnet is basically used as the magnetic field source, the permanent magnet forms the magnetic circuit for enhancing the discharge on the surface of the cathode, and also serves as the magnetic circuit for confining the plasma, but the problem with this structure is that the two functions of the permanent magnet cannot be At the same time, the best matching effect can be achieved, the parameters cannot be adjusted, and the sealing is not good. The unbalanced magnetic field in the ordinary closed-field unbalanced sputtering system is not completely closed, and the adjustment range of the deposition parameters is small. The degree of restraint is not ideal. One of the important problems is that the closed-field unbalanced sputtering system announced in the current literature always has a loophole in the magnetic field, which destroys the closure of the closed magnetic field. End of closed unbalanced sputtering target

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