Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Heating device, film forming apparatus, film forming method, and device

A heating device and mounting technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., can solve the problems of unfree expansion of the device, poor coverage, and inability to apply large substrates such as glass

Inactive Publication Date: 2011-04-13
PHILTECH
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, ECR (Electron Cycrotron Resonance, Electron Cyclotron Resonance) plasma CVD can also grow films when the substrate temperature is below 300°C, but the coverage is poor, so it is better used for bottom-up (bottom-up) growth
In addition, unlike plasma, ECR plasma has a limitation of microwave wavelength dependence, and device expansion is not free, so it cannot be applied to large substrates such as glass
In addition, although there is thermal CVD in which the film-forming gas is in contact with the tungsten wire to generate decomposition species, in order to compensate for the shortcomings of tungsten entering the film or the lack of compactness, an additional ion bombardment process must be added.
This will lead to device size and prevent device expansion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heating device, film forming apparatus, film forming method, and device
  • Heating device, film forming apparatus, film forming method, and device
  • Heating device, film forming apparatus, film forming method, and device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0115] figure 2 Indicates that it has the same as the figure 1 The shown heating device is a schematic cross-sectional view of a film forming apparatus configured by a heating device based on substantially the same principle. Such as figure 2 As shown, the glass substrate 24 has a thickness of, for example, 0.7 mm, and is tightly placed on the glass substrate supporting table 26 . The support table 26 has a vacuum suction tank 31 therein, which absorbs the glass substrate 24 to effectively make thermal contact, and the temperature of the support table 26 is used to control the temperature of the back surface 32 of the glass substrate 34 .

[0116] The heating mechanism of the introduced gas 12 for heating will be described. The heating mechanism has: a solid flat carbon central plate 33 formed of carbon (including, for example, graphite, isotropic carbon, etc.) A pair of left and right carbon side plates 39L, 39R, in the depth direction of the carbon central plate 33 ( ...

no. 2 approach

[0135] Figure 7 is a configuration diagram showing the configuration of the film forming apparatus 111 according to the second embodiment of the present invention, Figure 8 It is an enlarged view of its main part.

[0136] Such as Figure 7 As shown, the film forming apparatus 111 has: a substrate 112 for forming a desired film; a coolable and movable support table 113 supporting the substrate 112 ; and a gas blowing device 114 .

[0137] The substrate 112 is formed of a flat glass substrate or plastic substrate of a desired size, and a silicon oxide film or a silicon oxide film is formed on the surface 112a at a temperature higher than the softening temperature of these substrates 112 (for example, 300°C to 400°C). Films of high-temperature thermal CVD materials such as silicon nitride films and polysilicon are grown.

[0138] The support table 113 is formed on the surface 113a that is in close contact with the back surface 112b of the substrate 112. A plurality of groov...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a heating device capable of forming a film efficiently on a glass substrate. Also provided is a film forming apparatus having the heating device. The film forming apparatus comprises the heating device for blowing such a high-temperature gas vertically to the surface (25) of a glass substrate (24) placed on a supporting bed (26), as has a temperature higher than the softening point temperature of the glass substrate. The film forming apparatus blows such a depositing gas (43) simultaneously with a high-temperature gas to the surface of the glass substrate, as is thermally decomposed to form a film deposit.

Description

technical field [0001] The present invention relates to a heating device for forming, for example, a silicon thin film on a glass substrate, a film forming device and a film forming method having the heating device. [0002] In addition, the present invention relates to the improvement of film formation suitable for making large-area electronic components. For example, it involves forming a substrate that is not resistant to high temperature, such as a glass substrate or a substrate that has completed the wiring process. A method for growing or heating a film at a high temperature of the supporting platform, such as a silicon film or a silicon oxide film, a silicon nitride film, or a compound film of more than 3 yuan, and a film forming device thereof. Background technique [0003] Generally, as an element having a silicon thin film grown on a glass substrate, there are liquid crystal displays, organic EL (ELectro Luminescence, electroluminescence) displays, solar cells, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/205C23C16/452H01L21/31
CPCH01L21/02573H01L21/02595H01L21/02532C23C16/24H01L21/02422C23C16/46C23C16/4557H01L21/0262C23C16/4586C23C16/45595H01L21/67109C23C16/463
Inventor 古村雄二西原晋治村直美
Owner PHILTECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com