40results about How to "Stable sputtering" patented technology

The present invention relates to a sputtering target comprising at least indium oxide and zinc oxide, wherein the atomic ratio represented by In/(In+Zn) is 0.75 to 0.97, including a hexagonal layered compound represented by In2O3(ZnO)m, Wherein m is a positive integer ranging from 2 to 20, and the grain size of the hexagonal layered compound is 5 microns or less.

The invention discloses a preparation method of an intelligent glass cathode electrochromic layer coating material. In a process of preparing the intelligent glass cathode electrochromic layer tungsten oxide coating material, various oxides are fully and uniformly mixed by using slip casting, so that the density and uniformity of a target material are improved, and then the service life of the target material is prolonged. The chemical stability of the tungsten oxide material is improved by adding a second oxide into the tungsten oxide. Oxygen vacancies are formed by the vacuum treatment in asintering process, so that the material has conductivity, and stable sputtering is facilitated. In addition, a process of staged heating sintering is adopted, and other gases are added in argon gas, so that the film-forming rate can be improved, the surface roughness can be reduced, the sputtering rate can be improved, the film roughness can be reduced, the activation of equipment can be improved,the production cost can be reduced, the application of the tungsten oxide film in electrochromic devices is greatly improved, the production requirements are met, and the market promotion and productpopularization are facilitated.

Provided is a transparent conductive film used in liquid-crystal display devices, electroluminescent display devices, and the like, and is particularly suitable for use in solar cells. Also provided is a solar cell using said transparent conductive film and a sputtering target suited to forming said transparent conductive film. The provided transparent conductive film, which is highly moisture-resistant, comprises oxides of aluminum, magnesium, gallium, and zinc. Between 0.7% and 7% of the metal atoms in the transparent conductive film are aluminum, between 9.2% and 25% are magnesium, between 0.015% and 0.085% are gallium, and the remainder are zinc.

Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder.

It is an object of the present invention to provide a sputtering target-backing plate assembly having a high average pass through flux and allowing more stable sputtering, by disposing the raw material powder for a target on the backing plate and sintering them.

By simultaneously performing sintering and bonding, a sputtering target-backing plate assembly has a shorter manufacturing process, can shorten manufacturing period, and does not cause a problem of detachment due to an increase in temperature during sputtering. In addition, it is also an object of the present invention to provide a sputtering target-backing plate assembly at a reduced cost and with an improved average pass through flux (PTF).

The present invention relates to a sputtering target, wherein zinc sulfide and an oxide composed of indium oxide, zinc oxide and other trivalent positive elements A are used as main components, and the ratio of sulfur to all constituent components is 5 to 30 wt. %, the (111) peak intensity I1 of cubic ZnS measured by XRD and the (100) peak intensity I2 of hexagonal ZnS coexist and satisfy I1>I2. The object of the present invention is to provide a high-strength sputtering target capable of preventing the target from cracking when the target is manufactured or when a film is formed by sputtering, and a manufacturing method thereof, and to obtain a thin film for optical information recording media that is most suitable for use as a protective film, and to manufacture the same method.

The present invention provides a niobium oxide sputtering target that enables direct current (DC) sputtering, and a production method. This niobium oxide sputtering target is characterized by being a niobium oxide sintered body and in that the specific resistance thereof is 0.001-0.05 Ω⋅cm over the entire area of the sintered body in the thickness direction.

An oxide sputtering target according to the present invention comprises a sintered oxide that comprises Sn in an amount of 7 at% or more and In in an amount of 0.1 to 35.0 at% both relative to the total amount of all of metal components, with the remainder made up by Zn and unavoidable impurities. In the sintered oxide, the atom content ratios of Sn to Zn, i.e., Sn/(Sn+Zn), is 0.5 or less. The sintered oxide has a structure that contains, as the main phase, Zn2SnO4 in which In exists in the form of a solid solution.

This invention is to provide a technique of continuously performing sputtering. During a film is formed on the surface of a substrate 5a held by a holding plate 12 by keeping the holding plate 12 inside a treatment chamber in an erected position and sputtering a target 26, an untreated substrate 5b is mounted on the hand 43 of a substrate conveying robot in a conveying chamber, the pressure in the conveying chamber is adjusted to a value substantially equal to the pressure in the treatment chamber, and the substrate 5b is conveyed into the treatment chamber and is mounted on the holding plate 12 kept in a horizontal position. The conveying time does not add any additional time because the untreated substrate can be conveyed into the treatment chamber during sputtering.

The invention relates to a sample box for glow discharge analysis and characterization and a use method. The sample box comprises a sample box body, a sample box cover, a second cathode plate, a sample accurate positioning clamp, a top block and a positioning spring; the sample box cover and the second cathode plate are respectively arranged at the front end and the rear end of the sample box body; the sample accurate positioning clamp is detachably and fixedly connected to the inner wall of the sample box body and used for clamping a sample and accurately positioning the sample through scale marks, and the rear end face of the sample accurate positioning clamp and the analysis surface of the sample are located on the same plane and both make close contact with the second negative plate; and the top block and the positioning spring are sequentially arranged between the sample accurate positioning clamp and the sample box cover to press and position the sample accurate positioning clamp. The application range of sample analysis of glow discharge analysis characterization is greatly expanded, the glow discharge analysis characterization performance is improved, and the device has the advantages of being accurate in sample position positioning, simple in structure and convenient and reliable to use.

The present invention relates to low-emissivity glass comprising: a glass substrate; a first dielectric layer formed on the glass substrate; a metal layer formed on the first dielectric layer; an absorbent layer formed on the metal layer; a second dielectric layer formed on the absorbent layer; and a coating layer formed on the second dielectric layer and containing Zr, whereby a low-emissivity glass having good and excellent handling and long-term storage properties is provided.

A sintered oxide includes an In₂O₃ crystal, and a crystal A whose diffraction peak is in an incidence angle (2θ) range defined by (A) to (F) below as measured by X-ray (Cu—K α ray) diffraction measurement: 31.0 to 34.0 degrees . . . (A); 36.0 to 39.0 degrees . . . (B); 50.0 to 54.0 degrees . . . (C); 53.0 to 57.0 degrees . . . (D); 9.0 to 11.0 degrees . . . (E); and 19.0 to 21.0 degrees . . . (F).

The invention provides a gas flow sputtering device suitable for manufacturing sputtering target raw materials stably and at a high sputtering rate for a long time. The gas flow sputtering device is provided with: a sputtering chamber, the inside of which can be vacuumed; a pair of flat targets arranged in the sputtering chamber with their sputtering faces facing each other at intervals; one or more gas an exhaust port for supplying sputtering gas between the pair of flat targets; an exhaust port for exhausting the sputtering gas; A space between the flat targets is disposed on a side opposite to the gas discharge port; and an interval adjustment mechanism capable of adjusting an interval between the pair of flat targets.

The present invention addresses the problem of providing a sputtering cathode and a sputtering device using this sputtering cathode by which a film can be deposited on various kinds of workpieces, including flat workpieces, not only at a sufficiently high deposition rate with low impact but also with high sputtering target utilization efficiency. The sputtering cathode comprises a sputtering target 10 which has a tubular shape with a cross section having an opposing pair of long sides and which is set so that the erosion surface of the sputtering target 10 is inward-facing; additionally a magnetic circuit is disposed along the sputtering target 10, and the pair of long sides are constituted by cylindrical rotary targets 11, 12. The rotary targets have magnetic circuits therein and are configured such that cooling water flows therethrough. The magnetic circuits are disposed parallel to the central axis of the rotary targets and have a rectangular cross-section with long sides perpendicular to the radial direction of the rotary targets.