Sputtering target of sintered Sb-Te-based alloy

A sputtering target and sintered body technology, applied in the field of Sb-Te-based alloy sintered body targets, can solve the problems of insufficient diversity of Sb-Te-based alloy targets, unclear which forms exist, and insufficient target characteristics and functions. , to achieve the effect of improving characteristics, improving uniformity and preventing abnormal discharge

Active Publication Date: 2016-08-31
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] When forming a film containing a Sb-Te-based alloy material for a phase-change recording film, there are particularly problems in that abnormal structures such as nodules (abnormal protrusions) and pits (abnormal depressions) are generated on the target surface; Micro-arc discharge (abnormal discharge) occurs; these themselves are mixed into the film in the form of foreign matter in the form of clusters (aggregations of atoms) called powder particles
However, there is a problem that it is not at all clear in what form these oxygens exist in the Sb-Te-based alloy target
As a result, it can be said that the characteristics and functions of the target are insufficient
In addition, there is no technology for improving the characteristics of Sb-Te-based alloy targets by including fine particles of oxides, and there is a problem that the diversity of Sb-Te-based alloy targets is insufficient.

Method used

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  • Sputtering target of sintered Sb-Te-based alloy
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  • Sputtering target of sintered Sb-Te-based alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0063] As shown in Table 1, raw material particles of Te, Sb, and Ge with a purity of 99.999% (5N) excluding gas components were weighed so that Ge: 9.5 atomic %, Sb: 55.1 atomic %, and Te: 35.4 atomic %. For the purpose of preventing oxidation, the material with a particle size of 5mm or less is selected as the raw material. Next, these powders were evacuated to a vacuum degree of 8.5×10 -3 High-frequency melting was carried out by maintaining at 950° C. for 10 minutes in a melting furnace below pa. After melting, gas atomization was performed using high-purity Ar gas with a particle diameter of 20 μm.

[0064] In order to refine and uniformly disperse the oxides in the powder, jet mill pulverization was carried out. Thus, a raw material powder having an average particle diameter of 2 μm, a maximum grain size of 5 μm, and an oxygen content of 2000 ppm by weight was obtained. By hot pressing (vacuum, heating rate 5°C / min, final temperature: 570°C, pressing pressure 200kgf / c...

Embodiment 1-2

[0067] According to the composition shown in Table 1, a sintered body was produced under the same production conditions as in Example 1-1. The average oxygen concentration of the obtained target was 1600 ppm, the maximum value of the oxygen concentration was 2500 ppm, and the variation of the oxygen concentration was 1300 ppm. As an oxide, Sb was confirmed 2 o 3 、GeO 2 . In addition, the average particle size of the oxide was 0.1 μm, the maximum particle size was 1.1 μm, and the number of particles of 1 μm or more was 0.2% with respect to the total number of particles.

[0068] The number of particles at the time of sputtering of the target obtained in this way was 37, and the number of particles was further reduced compared with Example 1, which was a favorable result. Table 1 shows the above results. Table 1 also shows the main oxides present in the target.

Embodiment 1-3

[0070] As shown in Table 1, except that In was added, a sintered body was produced under the same production conditions as in Example 1-1. Evaluation of the target thus obtained revealed that the average value of the oxygen concentration was 1800 ppm, the maximum concentration was 2000 ppm, and the difference in oxygen concentration was 1500 ppm. As an oxide, GeO was confirmed 2 , TeO 2 . The average particle size of the oxide was 0.2 μm, the maximum particle size was 1.3 μm, and the number of particles of 1 μm or more was 0.1% with respect to the total number of particles.

[0071] In addition, the number of particles during sputtering was 80, which was a target of 100 or less, which was a good result. Table 1 shows the above results. Table 1 also shows the main oxides present in the target.

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Abstract

A sputtering target of a sintered Sb-Te-based alloy which is a sputtering target having an Sb content of 10-60 at% and a Te content of 20-60 at%, the remainder comprising one or more elements selected from among Ag, In, and Ge and unavoidable impurities. The sputtering target is characterized in that the oxides have an average grain diameter of 0.5 [mu]m or smaller. The objective of the invention is to achieve an improved structure of the sputtering target of the sintered Sb-Te-based alloy so that the occurrence of arcing during sputtering is prevented and that a film to be deposited by the sputtering has improved thermal stability.

Description

technical field [0001] The present invention relates to a Sb-Te-based alloy sintered body target suitable for forming a phase-change recording layer, in particular, an Sb-Te-based alloy sintered body sputtering with less generation of particles due to abnormal discharge during sputtering of oxygen and oxides target. Background technique [0002] In recent years, thin films containing Sb—Te-based alloy materials have been increasingly used as materials for phase change recording, that is, as media for recording information using phase change. As a method of forming the thin film containing the Sb—Te-based alloy material, a method generally called a physical vapor deposition method such as a vacuum vapor deposition method and a sputtering method is common. In particular, the magnetron sputtering method is often used to form the film in view of the operability and the stability of the film. [0003] The formation of the film by the sputtering method physically collides positi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C1/04C22C12/00C22C28/00C22C32/00B22F1/00B22F3/14B22F9/08
CPCC22C1/04C22C12/00C22C28/00C23C14/0623C23C14/3414B22F3/15B22F9/04B22F9/082B22F2009/044B22F2009/0848C23C14/08C23C14/083C23C14/086C23C14/10C23C14/14H01J37/3429
Inventor 小井土由将
Owner JX NIPPON MINING & METALS CORP
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