132results about How to "Prevent abnormal discharge" patented technology

A disclosed a plasma process apparatus includes a process chamber that houses a substrate subjected to a predetermined plasma process and may be evacuated to a reduced pressure; a microwave generator that generates microwaves for generating plasma; a waveguide pipe that transmits the microwaves from the microwave generator to the process chamber; a waveguide pipe/coaxial pipe converter connected to one end of the waveguide pipe; and a coaxial pipe that forms a line through which the microwaves are transmitted from the waveguide pipe-coaxial pipe converter to the process chamber. An inner conductive body of the coaxial pipe has a hollow portion; and a first process gas supplying portion that supplies a process gas into the process chamber through the hollow portion of the inner conductive body of the coaxial pipe.

The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.

The invention discloses an aluminum-scandium alloy target blank, and a preparation method and an application thereof, and belongs to the technical field of aluminum-scandium alloys. The aluminum-scandium alloy target blank prepared by combination of cold crucible levitation melting and variable-frequency electromagnetic stirring has an oxygen content of below 100 ppm and a total aluminum and scandium element content of 99.95 mass%, and has a high purity and a low oxygen content, so later high-quality film formation is facilitated; the volume percentage of a secondary precipitated phase in thealuminum-scandium alloy target blank is 5-25%, the average size is 20-45 [mu]m, and the blank has polygonal and nearly spherical shapes, a uniform microstructure and a significantly improved density,so micro-cracks and other internal defects in the ingot casting and deformation processing processes are effectively avoided, and the quality and yield of a target are significantly improved.

A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole.

The invention solves a problem that a target made by a prior art leaves its peripheral part unsputtered and consequently uneroded, when sputtered after having been mounted on a sputtering apparatus and surrounded by an earth shield, because when plasma is generated, an electric current passes to the earth shield from the target and the plasma is not formed on the surface of the peripheral part of the target. The sputtering target T has a predetermined outer shape which has a slope T2 formed on the whole periphery at which a sputtered surface intersects with a peripheral wall surface.

The invention provides a machining method of a target assembly. The method comprises the steps that the sputtering target assembly is provided and comprises a target backboard, and aluminum is contained in target materials; and after the surface of the target backboard is subjected to the turning process, the surface, obtained after the turning process, of the target backboard is subjected to the polishing process at least two times. By means of the polishing process, pores in the surface of the target backboard are closed, the target backboard has the antioxidation function under the natural condition, and therefore the problem that the electric conductivity of the target backboard is reduced due to oxidation of the target backboard is avoided, then the phenomenon of abnormal discharge or outage of a sputtering target in the sputtering process is avoided, and the quality of the sputtering target is guaranteed.

The invention discloses an elastic cleaning ball, a cleaning device and a cleaning method and a pressure test device and a pressure test method for a pipeline. The elastic cleaning ball comprises an elastic solid core, an elastic reinforcing plate arranged on the rear surface of the elastic solid core and an elastic coating which wraps the elastic solid core and the elastic reinforcing plate. The cleaning device comprises a ball serving device and a ball receiving device which are connected to both ends of the pipeline, and at least one elastic cleaning ball. The elastic cleaning ball is compactly contacted with the inner wall of the pipeline in the cleaning process. According to the cleaning device and cleaning method provided by the invention, the pipeline for conveying ore pulp is efficiently cleaned. The pressure test device comprises a first end water injection device, a water injection pump and a rear end emptying device which are connected to both ends of the pipeline as well as the elastic cleaning ball for emptying air in the pipeline. According to the pressure test device and method provided by the invention, the efficient pressure test efficiency is realized, and air in the pipeline can be completely emptied.

An image forming apparatus includes: a transfer member that transfers a developer image onto a transfer medium to form an image on the transfer medium; a bias applying unit that applies a transfer bias to the transfer member; and a bias control unit that controls the transfer bias to be applied to the transfer member by the bias applying unit, wherein a longitudinal length of the transfer member is formed to be shorter than a width of the transfer medium having a maximum width on which the image is to be formed with the image forming apparatus.

The present invention provides a cleaning apparatus of an ion source extraction electrode system, which can eliminate deposit in high speed along a wide area that form a leading-out electrode system of an ion source. The cleaning apparatus comprises the following components: a cleaning gas source (42) which supplies cleaning gas (48) between two opposite electrodes (11,12) of a leading-out electrode system (10), thereby keeping the gas pressure between the two electrodes to a gas pressure for generating glow discharge; and a glow discharge power supply (60) which applies DC voltage between the electrodes (11,12) for generating glow discharge (80). The cleaning apparatus further comprises the following components: an abnormal discharge measurer (84) which measures times (N) of abnormal discharge between the the electrodes (11,12) in preset time; and a power supply controller (86) which controls through the measured time (N) of abnormal discharge for increasing or reducing the output current of the glow discharge power supply (60) for a preset amplitude.

The present invention provides a washing dryer which comprises the following components: a washing tank; a outer tank; a housing which elastically supports the outer tank; a water supply device whichsupplies washing water to the outer tank; a heating device which heats the air in the outer tank; a circulating air feeding path for circulating the air in the outer tank through the heating device; an air feeding device which pressurizes and conveys the air in the circulating air feeding path for circulating; an electrostatic atomization generator which is provided in the circulating air feedingpath and supplies the particles through electrostatic atomization into the outer tank, wherein the circulating air feeding path is provided with an outer air entering part which causes the outer air to enter and a circulating air discharging part that discharges the air in the circulating air feeding path. The outer air entering part is composed of a first opening, an outer air guiding channel connected with the first opening, and an open and close valve. The circulating air discharging part is composed of a second opening and a circulating air discharging channel connected with the second opening.

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

A hard laminated film is provided, wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less. Thereby, the invention provides a cutting tool used as the basis materials, such as the extra hard alloy, the ceramic metal or the high speed steel and the like, or the abrasion resistance capsule of the vehicle slide unit and the like.

Provided is an Sb—Te alloy sintered compact target using atomized powder consisting of substantially spherical particles of an Sb—Te alloy, wherein the spherical atomized powder consists of particles that were crushed and flattened, and the flattened particles exhibiting a ratio (flatness ratio) of short axis and long axis of 0.6 or less occupy 50% or more of the overall particles. With this Sb—Te alloy sintered compact target, particles exhibiting a long axis orientation aligned within ±45° in a direction that is parallel to the target surface occupy 60% or more of the overall particles. In addition, the oxygen concentration in this Sb—Te alloy sintered compact target is 1500 wtppm or less. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.

The invention discloses a device used for preventing display panel paradoxical discharge and a display panel preparation system based on the device. The device used for preventing the display panel paradoxical discharge comprises a contact terminal and a voltage controller, wherein the contact terminal is a conductor and is used for being connected with an electrostatic discharge contact of a substrate to be processed; the voltage controller is connected with the contact terminal and is used for adjusting the voltage of the contact terminal and removing static electricity on the substrate to be processed. The device and the system are particularly suitable for the manufacturing process of a display panel with large size or high pixel density, a static electricity leading-out line absorb charges to eliminate a large number of charges which are accumulated on the surface of the display panel, when the voltage controller is connected to the electrostatic discharge contact by the contact terminal, the charges on the surface of the display panel are eliminated by adjusting voltage by the voltage controller, the control on the paradoxical discharge of the charges gathered on the surface of the display panel is realized, and the charges on the surface of the display panel and a plasma electric field in a technology reaction cavity are kept balanced.

A hot-rolled copper plate consists of pure copper having a purity of 99.99 mass % or greater, the hot-rolled copper plate having an average crystal grain diameter of 40 μm or less, and a (Σ3+Σ9) grain boundary length ratio (L σ3+σ9)/L), which is a ratio between a total crystal grain boundary length L measured by an EBSD method and a sum L (σ3+σ9) of a Σ3 grain boundary length Lσ3 and a Σ9 grain boundary length Lσ9, being 28% or greater.

The present invention provides a plasma processing device, wherein the plasma-related high-frequency power is supplied to an upper electrode and/or a lower electrode respectively from at least two high-frequency power supplies and the fluctuation of reflected waves is reliably detected. Meanwhile, the occurrence of abnormal discharge is avoided. A threshold setting part (123) is configured to switch a level of an obstructing threshold into a relatively low level of the obstructing threshold in a first high-frequency power supply part (65) and a second high-frequency power supply part (75) at a time point (T3) when the high-frequency power supply of the second high-frequency power supply part (75) is stabilized. The relatively low level of the obstructing threshold is continued at the same time point in the first high-frequency power supply part (65) and in the second high-frequency power supply part (75). At a time point (T4), the threshold setting part sets the obstructing threshold for a second time when the first power supply of the first high-frequency power supply part (65) is increased. Meanwhile, the level of the obstructing threshold is respectively raised to a relatively high level. The relatively high level is continued at the same time point in the first high-frequency power supply part (65) and in the second high-frequency power supply part (75).