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Sb-te base alloy sinter sputtering target

A technology of base alloy and sintered body is applied in the field of Sb-Te base alloy sintered body sputtering target, which can solve the problems of target cracking, inability to add additives, and easy occurrence of abnormal discharge, and achieve the effect of suppressing particle generation and preventing abnormal discharge.

Active Publication Date: 2009-09-02
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] However, it has the following problems: since carbon powder is non-metallic, when carbon is mixed in the existing Sb-Te-based alloy sputtering target, it becomes a foreign matter additive instead, and abnormal discharge and particle breakage are prone to occur during sputtering. Increased generation, sometimes target breakage, so it cannot be called a preferred additive

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0063] Ag, In, Sb, and Te powder raw materials with a purity of 4N or higher, except for gas components, are used to form Ag 5 In 5 Sb 70 Te 20 Alloys are formulated and synthesized, and mechanically pulverized in an inert atmosphere. Thus, a powder (X) having an average particle size of 8.0 μm as shown in Table 1 was obtained.

[0064] Next, the powder is divided into four types (1), (2), (3), and (4). In each powder, 5 atomic % of the average particle diameters shown in Table 1 are mixed to be 30 nm, 50 nm, 7 nm, 750nm carbon powder (Y), and hot press. The sintered body thus obtained is machined and then ground to produce an Ag containing a predetermined amount of carbon. 5 In 5 Sb 70 Te 20 alloy target.

[0065] The target has a structure in which fine carbon particles surround Sb-Te-based alloy particles. The ratio and density of Y / X are shown in Table 1. The generation of cracks was not observed on the target at all.

[0066] Sputtering was performed on a sili...

Embodiment 2

[0073] Use a gas atomization device, and use argon (100kgf / cm 2 ) as sparge gas at 780°C for Ge 22.2 Sb 22.2 Te 55.6 Alloy raw materials are sprayed to produce atomized powder. Thus, a completely spherical powder is obtained.

[0074] As this gas atomized powder, powder (X) having a particle size with an average diameter of 32.0 μm as shown in Table 2 was obtained. Next, divide the powder into four types (1), (2), (3), and (4), and in each powder, mix 5 atomic % of the average particle diameters shown in Table 2 as 30nm, 50nm, 7nm, and 750nm Carbon powder (Y), and hot pressing.

[0075] The sintered body thus obtained is machined and then ground to produce Ge 22.2 Sb 22.2 Te 55.6 alloy target. The ratio and density of Y / X are shown in Table 2.

[0076] The SEM photographs of the thus obtained target surface are shown in figure 1 . as it should figure 1 As shown, no defects such as cracks were observed at all, and there was a structure in which Sb—Te-based alloy pa...

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Abstract

The invention provides an Sb-Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb-Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb-Te base alloy particles is X and the particle size of carbon or boron is Y, Y / X is within the range of 1 / 10 to 1 / 10000. The present invention seeks to improve the Sb-Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

Description

technical field [0001] The invention relates to a sputtering target of Sb-Te base alloy sintered body, which contains carbon or boron, and can effectively suppress the generation of particles. Background technique [0002] In recent years, thin films made of Sb—Te-based materials have begun to be used as materials for phase change recording, that is, media for recording information using phase change. As a method of forming the thin film made of the Sb—Te-based alloy material, it is generally performed by a method generally called a physical vapor deposition method such as a vacuum vapor deposition method or a sputtering method. In particular, from the viewpoint of operability and film stability, magnetron sputtering is often used for formation. [0003] Sputtering film formation is performed by physically colliding positive ions such as Ar ions onto a target placed at the cathode, releasing the materials constituting the target by using the collision energy, and laminating...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C22C28/00G11B7/26G11B7/243G11B7/2433
CPCC23C14/0623C22C12/00C22C28/00C22C1/05C23C14/3414B22F2998/10G11B7/266B22F9/082B22F3/14B22F3/10B22F9/08
Inventor 矢作政隆高桥秀行安岛宏久
Owner JX NIPPON MINING & METALS CORP
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