Machining method of target assembly

Abstract

The invention provides a machining method of a target assembly. The method comprises the steps that the sputtering target assembly is provided and comprises a target backboard, and aluminum is contained in target materials; and after the surface of the target backboard is subjected to the turning process, the surface, obtained after the turning process, of the target backboard is subjected to the polishing process at least two times. By means of the polishing process, pores in the surface of the target backboard are closed, the target backboard has the antioxidation function under the natural condition, and therefore the problem that the electric conductivity of the target backboard is reduced due to oxidation of the target backboard is avoided, then the phenomenon of abnormal discharge or outage of a sputtering target in the sputtering process is avoided, and the quality of the sputtering target is guaranteed.

Description

technical field [0001] The invention relates to the technical field of targets, in particular to a processing method for a target component, especially a processing method for a target back plate. Background technique [0002] Physical Vapor Deposition (Physical Vapor Deposition; PVD) is the most common sputtering process in the manufacture of semiconductor chip liquid crystal displays. In the sputtering process, the target assembly is composed of a sputtering target meeting the sputtering performance and a target backing plate with a certain hardness and electrical conductivity. It plays a supporting role in the sputtering platform and is used as a conductor in the sputtering process. [0003] In the prior art, after the sputtering target and the target back plate are welded, the surface is processed by a turning process, cleaned, vacuum-packed, and then directly provided to customers without other surface treatment. However, under the existing technology, the target back...

AI Technical Summary

Problems solved by technology

[0003] In the existing technology, the sputtering target and the target back plate are surface processed by turning process after welding, cleaned and vacuum packaged, and then directly provided to customers without other surface treatment

However, in the prior art, the target backplane is prone to oxidation, and once oxidized, it will affect the conductivity of the target backplane, which may cause abnormal discharge or power failure of the sputtering target during the sputtering process. phenomenon, which in turn affects the quality of the sputtering target, and even causes the scrapping of the sputtering target

[0004] Therefore, according to the above situation, it is necessary to optimize the surface treatment process of the target backplane to solve the problem that the target backplane is prone to oxidation in the prior art

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