Plasma processing device and method of operating the same

Abstract

The present invention provides a plasma processing device, wherein the plasma-related high-frequency power is supplied to an upper electrode and/or a lower electrode respectively from at least two high-frequency power supplies and the fluctuation of reflected waves is reliably detected. Meanwhile, the occurrence of abnormal discharge is avoided. A threshold setting part (123) is configured to switch a level of an obstructing threshold into a relatively low level of the obstructing threshold in a first high-frequency power supply part (65) and a second high-frequency power supply part (75) at a time point (T3) when the high-frequency power supply of the second high-frequency power supply part (75) is stabilized. The relatively low level of the obstructing threshold is continued at the same time point in the first high-frequency power supply part (65) and in the second high-frequency power supply part (75). At a time point (T4), the threshold setting part sets the obstructing threshold for a second time when the first power supply of the first high-frequency power supply part (65) is increased. Meanwhile, the level of the obstructing threshold is respectively raised to a relatively high level. The relatively high level is continued at the same time point in the first high-frequency power supply part (65) and in the second high-frequency power supply part (75).

Description

Technical field [0001] The present invention devises a plasma processing apparatus and an operating method for plasma processing a processing gas using high-frequency power and performing processing such as etching on an object to be processed using the plasma. Background technique [0002] In the manufacturing process of FPD (Flat Panel Display) represented by semiconductor devices and liquid crystal display devices, plasma etching equipment that performs etching treatment on objects to be processed such as semiconductor wafers and glass substrates, and film forming processes can be used. Plasma processing equipment such as plasma CVD equipment, etc. [0003] For example, it is known that in an etching apparatus that supplies high-frequency power to parallel plate-shaped electrodes and uses capacitively coupled plasma formed between the electrodes to etch the object to be processed, one side of the electrode disposed vertically opposite to the plasma High-frequency power connecti...

AI Technical Summary

Problems solved by technology

When abnormal discharge occurs, adverse effects such as damage to components and destruction of devices occur

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