Electrode member for plasma treating appts., plasma treating appts. and plasma treating method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- PANASONIC CORP
- Publication Date
- 2004-08-11
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to the front side of a gas supply nozzle of an electrode for generating plasma to be installed in a plasma processing apparatus. Further, the present invention also relates to a plasma processing device using the aforementioned electrode element and a plasma processing method. Background technique
[0002] A plasma processing apparatus is well known as an apparatus for polishing electronic devices such as substrates or semiconductor devices. The plasma processing apparatus is used to generate plasma in a vacuum environment, and perform processing (such as etching) on the surface of an object to be physically and chemically processed by using the plasma. Plasma is generated by applying a high-frequency voltage to an electrode within a sealed process chamber. A gas for generating plasma (hereinafter referred to as "gas") having a predetermined pressure is supplied to the processing chamber.
[0003] In such a plasma treatment, ...