Sputtering target and thin film for optical information recording medium

A technology for sputtering targets and positive elements, which is applied in the fields of optical record carrier, optical record carrier manufacture, optical recording/reproduction, etc. It can solve the problems of not necessarily sufficient and easy to break, and achieve less quality change and stable sputtering , the effect of stabilizing costs

Active Publication Date: 2010-06-16
JX NIPPON MINING & METALS CORP
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  • Abstract
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Problems solved by technology

[0020] However, the above-mentioned materials for forming a transparent conductive film are not necessarily sufficient as a thin film for an optical information recording medium (especially used as a protective film).
[0021] On the other hand, there is a problem with composite targets in which ZnO-based homologues are added to ZnS, which is prone to cracking during target manufacturing or high-power sputtering

Method used

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  • Sputtering target and thin film for optical information recording medium

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Embodiment 1 to 8

[0055] Prepare In less than 5μm equivalent to 4N 2 o 3 powder and Ga below 1 μm equivalent to 4N 2 o 3 Al 2 o 3 Powder, Y 2 o 3 Powder, La 2 o 3 powder and ZnO powder corresponding to 4N with an average particle diameter of 5 μm or less were mixed in the molar ratio shown in Table 1, wet mixed and dried, and then calcined at 1100°C.

[0056] Then, the composite oxide powder and ZnS powder corresponding to 4N having an average particle diameter of 5 μm or less were mixed in the molar ratio shown in Table 1. During the mixing, use a wet ball mill or a dry high-speed mixer to disperse the powders uniformly. Then, this mixed powder was filled in a carbon mold, and hot-pressed at a temperature of 900° C. to form a target. At this time, after maintaining at 700 to 800° C. for 2 hours, slow cooling was performed.

[0057] The (111) peak intensity I1 of the cubic ZnS and the (100) peak intensity I2 of the hexagonal ZnS determined by the XRD of the target coexist, as shown ...

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Abstract

A sputtering target which comprises zinc sulfide and an oxide having a trivalent positive element A, for example, indium oxide, zinc oxide or the like as the main components, characterized by the content of sulfur amounting to from 5 to 30% by weight of the all components, having both of the (111) peak intensity I1 of the cubic system ZnS and the (100) peak intensity I2 of the hexagonal system Znsin the XRD measurement, and fulfilling I1>I2. Namely, it is intended to provide a sputtering target having a high intensity whereby the target can be prevented from cracking in the course of producing the target or forming a film by sputtering, a method of producing the same, a thin film for an optical information recording medium which is most suitably usable as, in particular, a protective film, and a method of producing the same.

Description

technical field [0001] The invention relates to a sputtering target and a thin film for optical information recording medium (especially used as a protective film). The sputtering target has the stability of amorphous in the thin film for optical information recording medium protective layer. Direct current (DC) sputtering can be performed on the film, and the arc generation during sputtering is less and can reduce particles (dusting) or nodules generated by arc discharge, and has high density and less quality variation, which can improve mass production. Background technique [0002] In recent years, high-density recording optical disc technology, which is a rewritable high-density optical information recording medium without a magnetic head, is being developed and attracting high attention. There are three types of optical discs: ROM (read-only), R (write-once), and RW (rewritable). In particular, the phase change method used in the RW (RAM) type has attracted attention. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B35/547C04B35/453G11B7/26G11B7/257G11B7/254G11B7/24
CPCG11B2007/25706C04B35/453C04B2235/446C04B35/547C04B2235/3284G11B2007/25716Y02T50/67C04B2235/3217C04B2235/9646C04B2235/3286C04B2235/77G11B2007/25708C04B2235/3227G11B7/2578C04B2235/96C04B2235/786G11B2007/25715C23C14/3414C04B35/62685G11B7/266C04B2235/5436C04B2235/3225C04B2235/785G11B7/2585G11B7/26G11B7/2548Y02T50/60
Inventor 高见英生矢作政隆
Owner JX NIPPON MINING & METALS CORP
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