Gas flow sputtering device, target for gas flow sputtering, and manufacturing method of sputtering target raw material

Abstract

The invention provides a gas flow sputtering device suitable for manufacturing sputtering target raw materials stably and at a high sputtering rate for a long time. The gas flow sputtering device is provided with: a sputtering chamber, the inside of which can be vacuumed; a pair of flat targets arranged in the sputtering chamber with their sputtering faces facing each other at intervals; one or more gas an exhaust port for supplying sputtering gas between the pair of flat targets; an exhaust port for exhausting the sputtering gas; A space between the flat targets is disposed on a side opposite to the gas discharge port; and an interval adjustment mechanism capable of adjusting an interval between the pair of flat targets.

Description

technical field [0001] The present invention relates to a gas flow sputtering device, a target for gas flow sputtering and a method for manufacturing raw materials for the sputtering target. Background technique [0002] In the field of magnetic recording typified by hard disk drives, materials based on ferromagnetic metals Co, Fe, or Ni are used as materials for magnetic thin films responsible for recording. For example, a Co—Cr-based or Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component is used for the recording layer of a hard disk employing an in-plane magnetic recording method. In the recording layer of the hard disk using the perpendicular magnetic recording method that has been put into practical use in recent years, a composite material in which nonmagnetic particles such as oxides and carbon are dispersed in a Co-Cr-Pt-based ferromagnetic alloy mainly composed of Co is used. Material. [0003] From the viewpoint of high productivity, sputtering t...

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Problems solved by technology

However, in the current mechanical pulverization and mixing method, there is a physical limit to the mi

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