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Sputtering target, transparent conductive oxide, and method for preparing sputtering target

A transparent conductive, sputtering target technology, applied in the field of sputtering targets, can solve problems such as the inability to completely remove spherical objects

Inactive Publication Date: 2005-04-06
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As described above, ITO or IZO has excellent performance as a transparent conductive oxide material, but there is a problem that when the target is used to form a thin film of ITO or IZO, it is easy to generate adhesion on the surface of the target. figure 2 (photograph) as shown in the bulb (bulge)
That is, a target is prepared whose density is 99% of the theoretical density, but even in this case the spheres cannot be completely removed

Method used

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  • Sputtering target, transparent conductive oxide, and method for preparing sputtering target
  • Sputtering target, transparent conductive oxide, and method for preparing sputtering target
  • Sputtering target, transparent conductive oxide, and method for preparing sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0452] (1)

[0453] ① Target preparation

[0454] Indium oxide with an average particle size of 1 micron and zinc oxide with an average particle size of 1 micron are used as raw materials, mixed with each other so that the atomic ratio of In / (In+Zn) is 0.83, and added to a wet ball mill. After 72 Mixing and milling for hours yields a fine powdery raw material.

[0455] The fine powdery raw material was granulated, and the obtained granules were subsequently pressed into specifications of 10 cm in diameter and 5 mm in thickness. This was placed in a sintering furnace and sintered at 1,450° C. for 36 hours in compressed oxygen to obtain a sintered body (target) made of a transparent conductive oxide.

[0456] ② Target evaluation

[0457] Density, volume resistance, X-ray diffraction analysis, crystal grain size and various physical properties of the obtained target were measured.

[0458] The density of the sintered body is 6.8g / cm 3 , the volume resistance determined by th...

Embodiment 2 to 3

[0474] (1) Preparation of sputtering target

[0475] Targets [B1] and [C1] were obtained in the same manner as in Example 1, but in Examples 2 and 3, the same indium oxide and zinc oxide as in Example 1 were used in the form of In / (In+Zn), respectively. A mixture mixed so that the atomic ratio was 0.93 and a mixture in which the same indium oxide and zinc oxide as in Example 1 were mixed so that the atomic ratio of In / (In+Zn) was 0.95 were used as raw materials.

[0476] The measurement results of compositions and physical properties of the targets [B1] and [C1] are shown in Table 1.

[0477] (2) Evaluation of targets and transparent conductive oxides

[0478] In the same manner as in Example 1, transparent conductive oxides were prepared from [B1] and [C1], respectively. The target and transparent conductive oxide were evaluated. The results obtained are listed in Table 2.

Embodiment 4

[0496] (1) Preparation of sputtering target

[0497] Indium oxide with an average particle size of 1 micron, zinc oxide with an average particle size of 1 micron and tin oxide with an average particle size of 0.5 micron are used as raw materials, and the percentages of indium oxide, zinc oxide and tin oxide are respectively 75% by weight, 5.5% by weight and 19.5% by weight were mixed with each other and added to the wet ball mill. The raw material is then mixed and pulverized to obtain a finely powdered raw material.

[0498] The fine powdery raw material obtained here was granulated, and the obtained granules were subsequently compressed into specifications of 10 cm in diameter and 5 mm in thickness. Put it into a sintering furnace and sinter at 1,450°C for 36 hours in compressed oxygen to obtain a sintered body made of transparent conductive oxide.

[0499] As a result, the density is 6.8g / cm 3 , the volume resistance determined by the 4-probe method is 0.84 × 10 -3 Ω.cm...

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Abstract

In a sputtering target comprising at least indium oxide and zinc oxide, the atomic ratio represented by In / (In-Zn) is set to a value within the range of 0.75 to 0.97, a hexagonal layered compound represented by In 2 O 3 (ZnO) m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 m or less .

Description

technical field [0001] The present invention relates to a sputtering target (hereinafter simply referred to as a target), a transparent conductive oxide made from the sputtering target, and a method for preparing the sputtering target. [0002] In particular, the present invention relates to a target capable of suppressing the generation of globules when forming a thin film of a transparent conductive oxide by sputtering and making sputtering more stable, a transparent conductive oxide made from such a target, and a method for preparing the target method. Background technique [0003] In recent years, display devices have been significantly developed. Liquid crystal display (LCD), electroluminescence display (EL), field emission display (FED), etc. have been used as display devices in office machines such as personal computers and data processors or in control systems in factories. These display devices have a sandwich structure in which display elements are sandwiched bet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/245C04B35/01C04B35/453C04B35/457C04B35/645C23C14/08C23C14/34G02F1/1343
CPCC04B2235/785C23C14/086C04B2235/763C04B35/6262C04B35/64C03C2217/23C04B2235/44C04B2235/786C04B2235/3286C23C14/3414C04B2235/449C04B2235/9646C03C2217/211C04B2235/443C23C14/3407C03C2218/154C04B2235/441C04B35/457G02F1/13439C04B2235/3284C04B35/6455C04B2235/767C04B2235/5436C04B2235/77C04B2235/963C04B2235/96C04B35/453C04B35/01C04B2235/9653C03C2217/216C04B2235/664C04B2235/3293C23C14/34
Inventor 井上一吉渋谷忠夫海上晓
Owner JX NIPPON MINING & METALS CORP
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