Niobium oxide sputtering target, production method therefor, and niobium oxide film

A manufacturing method, a technology of niobium oxide, applied in sputtering coating, vacuum evaporation coating, coating, etc., can solve the problems of DC sputtering stop, uneven stress, low specific resistance, etc., to reduce target specific resistance, Increased film formation rate and uniform specific resistance

Inactive Publication Date: 2015-11-18
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the target is dug into the target as the sputtering proceeds, the non-conductive unreduced part is exposed on the surface, and there is a problem that DC sputtering stops.
[0017] In addition, in the sputtering target proposed in the above-mentioned Patent Document 5, since it is manufactured through three stages of the calcining process of the raw material powder, the main firing, and the hot isostatic pressing (HIP) process in a reducing atmosphere, the amount of productive
Furthermore, since the reduction treatment is performed after obtaining the sintered compact with a high density, there is a possibility that unreduced parts may remain inside the target as in the case of the above-mentioned Patent Document 4.
[0018] In addition, in the method of manufacturing a reduced oxide sputtering target proposed in the above-mentioned Patent Document 6, since a reduced oxide is formed by a sputtering method and a reduction treatment is performed in advance, the specific resistance inside the target is low, but in Generally, high-density and high-quality targets cannot be obtained in sputtering targets by the sputtering method
Furthermore, when manufacturing a sputtering target with a thickness of more than 5 mm, there is a problem that stable DC sputtering cannot be performed due to unevenness such as stress in the thickness direction.

Method used

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  • Niobium oxide sputtering target, production method therefor, and niobium oxide film
  • Niobium oxide sputtering target, production method therefor, and niobium oxide film
  • Niobium oxide sputtering target, production method therefor, and niobium oxide film

Examples

Experimental program
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Effect test

no. 1 Embodiment

[0049]

[0050] After sintering commercially available niobium oxide powder (Nb 2 o 5 powder) before reduction treatment to produce niobium oxide powder (Nb 2 o 5-x powder).

[0051] First, commercially available niobium oxide powder (Nb 2 o 5 powder) was added to a carbon crucible, and the reduction treatment was performed by heating at a temperature of 500 to 1100° C. for 3 to 5 hours in vacuum according to the reduction conditions shown in Table 1. Next, niobium oxide powder (Nb 2 o 5-x Powder) and zirconia balls are added to a plastic container (polyethylene bottle), and mixed in a dry ball mill device at a speed of 80-120rpm for 1-3 hours. Then, the obtained Nb 2 o 5-x The powder is classified through a sieve having a hole diameter of 32 to 600 μm so that the average particle size becomes 100 μm or less.

[0052]

[0053] Nb will be thus obtained 2 o 5-x The powder is used as the raw material powder, and the raw material powder is filled in the mold. Accor...

no. 2 Embodiment

[0115] In the second example of the present invention, a niobium oxide sputtering target in which the average crystal grain size of the niobium oxide crystal grains in the niobium oxide sintered body is 100 μm or less was produced.

[0116] When producing a niobium oxide sputtering target, the reduced powder of Example 1 in the above-mentioned first Example is used as an example. As mentioned above, the reduced powder is niobium oxide powder (Nb 2 o 5 powder) Niobium oxide powder (Nb 2 o 5-x powder), Table 6 shows the reduced powders of Examples 10-14. For Examples 10 to 14, the oxygen deficiency amount of the reduced powder was measured by the same procedure as in the case of the first example. Calculate the oxygen deficiency x by the above calculation formula. The results are shown in Table 6 of "Reduced Powder Oxygen Deficiency Nb 2 o 5-x " column, because any reduction powder all uses the reduction powder of embodiment 1, therefore x=0.05. And, also confirm that Nb ...

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Abstract

The present invention provides a niobium oxide sputtering target that enables direct current (DC) sputtering, and a production method. This niobium oxide sputtering target is characterized by being a niobium oxide sintered body and in that the specific resistance thereof is 0.001-0.05 Ω⋅cm over the entire area of the sintered body in the thickness direction.

Description

technical field [0001] The present invention relates to a niobium oxide sputtering target suitable for forming a niobium oxide film having a high refractive index by direct current (DC) sputtering, a manufacturing method thereof, and a niobium oxide film formed using the niobium oxide sputtering target membrane. [0002] This application claims priority based on Patent Application No. 2013-035575 filed in Japan on February 26, 2013 and Patent Application No. 2014-23246 filed in Japan on February 10, 2014, and uses the contents thereof here. Background technique [0003] In recent years, solar cells that directly convert sunlight into electrical energy have attracted attention and been developed from the viewpoint of energy saving, efficient use of resources, and prevention of environmental pollution. Here, a solar cell using an oxide semiconductor sensitized with an organic dye instead of silicon is known as a photoelectric conversion material. As an oxide semiconductor fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/00C23C14/08
CPCC23C14/3414C04B35/495C04B35/6265C04B35/645C04B35/6455C04B2235/3253C04B2235/6581C23C14/083
Inventor 梅本启太张守斌
Owner MITSUBISHI MATERIALS CORP
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