Oxide sputtering target and method for producing same, and protective film for optical recording media

A manufacturing method and oxide technology, which are applied in the directions of recording/reproducing, optical recording medium, data recording, etc. by optical methods, to achieve the effects of lower specific resistance, less cracking, and high preservation.

Active Publication Date: 2015-11-18
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the tin oxide phase in the structure of this sputtering target causes nodules, and there is a problem that particles are generated thereby.

Method used

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  • Oxide sputtering target and method for producing same, and protective film for optical recording media
  • Oxide sputtering target and method for producing same, and protective film for optical recording media
  • Oxide sputtering target and method for producing same, and protective film for optical recording media

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Embodiment

[0042] In the present example, an oxide sputtering target which is an oxide sintered body having a composition containing Sn: 7 at % or more and In: 0.1 ~35.0at%, the balance is composed of Zn and unavoidable impurities, the atomic ratio Sn / (Sn+Zn) of Sn and Zn is 0.5 or less, or an oxide sintered body with the following composition, that is, relative to the metal component The total amount contains Sn: 7at% or more and In: 0.1 to 35.0at%, and contains a total of 1.0 to 30.0at% of one or more of Ge and Cr, and the balance is composed of Zn and unavoidable impurities. Sn and The atomic ratio Sn / (Sn+Zn) of Zn is 0.5 or less, and the atomic ratio (Sn+Cr+Ge) / (Sn+Cr+Ge+Zn) of Sn, Cr, Ge, and Zn is 0.6 or less, and Zn with In as a solid solution 2 SnO 4 Organization as the primary phase. Prepare zinc oxide (chemical formula: ZnO, average particle size: D 50 =1μm), tin oxide (chemical formula: SnO 2 、D 50 =16μm), indium oxide (chemical formula: In 2 o 3 、D 50 =11μm), germani...

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Abstract

An oxide sputtering target according to the present invention comprises a sintered oxide that comprises Sn in an amount of 7 at% or more and In in an amount of 0.1 to 35.0 at% both relative to the total amount of all of metal components, with the remainder made up by Zn and unavoidable impurities. In the sintered oxide, the atom content ratios of Sn to Zn, i.e., Sn/(Sn+Zn), is 0.5 or less. The sintered oxide has a structure that contains, as the main phase, Zn2SnO4 in which In exists in the form of a solid solution.

Description

technical field [0001] The invention relates to an oxide sputtering target and a manufacturing method thereof. Specifically, this invention relates to the oxide sputtering target for forming the protective film for optical recording media used for Blu-ray Disc (registered trademark: hereinafter referred to as BD) etc., and its manufacturing method, for example. [0002] This application claims priority based on Patent Application No. 2013-080247 for which it applied in Japan on April 8, 2013, and uses the content here. Background technique [0003] In recent years, as photos and animations have become higher in pixels, the digital data recorded on optical recording media has increased, and higher capacity of recording media has been demanded. Optical recording media with high recording capacity have been sold as high-capacity optical recording media that use double-layer recording. The mode has a BD with a capacity of 50GB. In this BD, a further increase in capacity is req...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08G11B7/254G11B7/257G11B7/26
CPCG11B7/257C04B35/453C04B35/645C04B35/6455C04B2235/3241C04B2235/3284C04B2235/3286C04B2235/3287C04B2235/3293C23C14/086C23C14/3414G11B7/266G11B2007/25706G11B2007/2571G11B2007/25715
Inventor 斋藤淳森理惠
Owner MITSUBISHI MATERIALS CORP
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