Transparent conductive film, solar cell using same, sputtering target for forming said transparent conductive film, and manufacturing method therefor
A transparent conductive film, sputtering target technology, applied in sputtering coating, conductive layers on insulating carriers, circuits, etc., can solve the problems of solar cell power generation efficiency decline, conductivity deterioration, brightness decline and other problems
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2012-09-12
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to a transparent conductive film used in liquid crystal display devices, organic electroluminescent display devices, antistatic conductive film coatings, gas sensors, solar cells, etc., solar cells using the transparent conductive film, and a method for forming the transparent conductive film Sputtering target for a transparent conductive film and method for producing the sputtering target, particularly to a transparent conductive film exhibiting excellent moisture resistance for a long period of time when used as a transparent conductive film for solar cells, and a sputtering method for forming the transparent conductive film target. Background technique
[0002] At present, as one of the transparent conductive films used in liquid crystal display devices, electroluminescent display devices, antistatic conductive film coatings, gas sensors, solar cells, etc., Al-Mg-Zn-based oxides are known. transparent conductive film. In part...
Examples
Embodiment
[0091] Hereinafter, the Example at the time of actually manufacturing the sputtering target for transparent conductive films is demonstrated based on said this embodiment.
[0092] The making of sputtering target of the present invention:
[0093] As a raw material powder, Al with a purity of 99.9% or more and an average particle size of 0.4 μm is weighed and blended 2 o 3 Raw material powder, MgO raw material powder with a purity of 99.9% or higher and an average particle size of 1 μm, Ga with a purity of 99.9% or higher and an average particle size of 0.3 μm 2 o 3 Raw material powder and ZnO raw material powder with a purity of 99.9% or more and an average particle size of 0.4 μm, so that it becomes the predetermined composition shown in Table 1, is put into a polyethylene pot, and ZrO with a diameter of φ3 (diameter φ3mm) is used 2 The balls are ball milled, and the average particle size of the mixed powder is pulverized to less than 0.4 μm (in addition, the solvent used...