Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

fe-co alloy sputtering target material and soft magnetic thin film layer, and perpendicular magnetic recording medium using it

A technology of sputtering target materials and alloys, which is applied in the directions of magnetic recording, magnetic layer coating, sputtering coating coating, etc., and can solve the problems of particles and other problems

Active Publication Date: 2018-04-03
SANYO SPECIAL STEEL COMPANY
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the sputtering targets realizing the above-mentioned film composition, especially the sputtering targets having the composition of (Fe-20-80Co)-4-25Nb or Ta disclosed in Patent Document 2, there is a tendency to reflect rapid cooling and solidification. The dendrite structure formed at the time, the diameter of the largest inscribed circle is an intermetallic compound phase with a size of 10 μm or less, so there is a problem that particles are generated during sputtering

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • fe-co alloy sputtering target material and soft magnetic thin film layer, and perpendicular magnetic recording medium using it
  • fe-co alloy sputtering target material and soft magnetic thin film layer, and perpendicular magnetic recording medium using it
  • fe-co alloy sputtering target material and soft magnetic thin film layer, and perpendicular magnetic recording medium using it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0045] Hereinafter, the present invention will be specifically described by way of examples.

[0046] With the compositions shown in Tables 1 to 4, soft magnetic alloy powders were prepared by a gas atomization method. The obtained powder was classified to 500 μm or less, and used as a raw material powder for HIP molding (hot isostatic pressing). The billet for HIP molding is produced by filling a carbon steel tank with a diameter of 250mm and a length of 50mm, filling the raw material powder, and then vacuum degassing and sealing. With respect to this powder-filled billet, HIP molding was performed under the conditions of molding pressure, molding temperature, and holding time shown in Tables 1-4. Thereafter, a sputtering target with a diameter of 180 mm and a thickness of 7 mm was produced from the compact.

[0047] It has a phase mainly composed of Fe and Co, and an intermetallic compound phase containing one or two of Fe and Co and M elements, and the phase of one or two...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The target material of the present invention is composed of at least one M element selected from Nb, Ta, Mo, and W, and the remainder as one or both of Fe and Co and inevitable impurities, and satisfies the following Formula (1): (Fex‑Co100‑x)100‑Y MY…(1) [In the formula, the atomic ratios are 0≤X≤100 and 4≤Y≤28. ] Sputtering target composed of Fe-Co alloy, the microstructure of the sputtering target has a phase mainly composed of Fe and Co, and a metal containing one or both of Fe and Co and M element The intermetallic compound phase grows in a network of one or both of Fe and Co and the intermetallic compound phase composed of M element, and surrounds and disconnects the phase dominated by Fe and Co to isolate it. The number of isolated phases mainly composed of Fe and Co is 300 or more per 10000 μm 2 in the sputtering target.

Description

[0001] Cross-reference of related applications [0002] This application claims priority based on Japanese Patent Application No. 2013-168787 for which it applied on August 15, 2013, The entire disclosure content is incorporated in this specification by reference. technical field [0003] The invention relates to a Fe-Co alloy sputtering target material, a soft magnetic thin film layer, and a perpendicular magnetic recording medium using the same. Background technique [0004] In recent years, the progress of magnetic recording technology has been remarkable. In order to increase the drive capacity, the recording density of magnetic recording media has been increasing. The in-plane magnetic recording media that has been popular in the past can achieve higher recording densities. The perpendicular magnetic recording method has obtained Practical. The so-called perpendicular magnetic recording method is a method suitable for high recording density by forming the easy axis of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C22C19/07C22C38/00G11B5/667G11B5/851C22C1/04C22C33/02
CPCC22C19/07C22C38/00G11B5/667G11B5/851C22C1/0433C22C33/0285C22C2200/02C22C30/00C23C14/165C23C14/3414C22C1/047
Inventor 长谷川浩之泽田俊之松原庆明
Owner SANYO SPECIAL STEEL COMPANY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com