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Sputtering target and thin film for optical information recording medium

A technology of sputtering target and positive element, which is applied in the direction of optical recording carrier, optical recording carrier manufacturing, optical recording/reproduction, etc., can solve the problems of easy breakage and incompleteness, achieve less quality change, improve characteristics, The effect of improving mass production rate

Active Publication Date: 2008-06-25
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0020] However, the above-mentioned materials for forming a transparent conductive film are not necessarily sufficient as a thin film for an optical information recording medium (especially used as a protective film).
[0021] On the other hand, there is a problem with composite targets in which ZnO-based homologues are added to ZnS, which is prone to cracking during target manufacturing or high-power sputtering

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1 to 8

[0055] Prepare In less than 5μm equivalent to 4N 2 o 3 powder and Ga below 1 μm equivalent to 4N 2 o 3 al 2 o 3 Powder, Y 2 o 3 Powder, La 2 o 3 powder and ZnO powder corresponding to 4N with an average particle diameter of 5 μm or less were mixed in the molar ratio shown in Table 1, wet mixed and dried, and then calcined at 1100°C.

[0056] Then, the composite oxide powder and ZnS powder corresponding to 4N having an average particle diameter of 5 μm or less were mixed in the molar ratio shown in Table 1. During the mixing, use a wet ball mill or a dry high-speed mixer to disperse the powders uniformly. Then, this mixed powder was filled in a carbon mold, and hot-pressed at a temperature of 900° C. to form a target. At this time, after maintaining at 700 to 800° C. for 2 hours, slow cooling was performed.

[0057] The (111) peak intensity I1 of the cubic ZnS and the (100) peak intensity I2 of the hexagonal ZnS determined by the XRD of the target coexist, as shown ...

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PUM

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Abstract

The present invention relates to a sputtering target, wherein zinc sulfide and an oxide composed of indium oxide, zinc oxide and other trivalent positive elements A are used as main components, and the ratio of sulfur to all constituent components is 5 to 30 wt. %, the (111) peak intensity I1 of cubic ZnS measured by XRD and the (100) peak intensity I2 of hexagonal ZnS coexist and satisfy I1>I2. The object of the present invention is to provide a high-strength sputtering target capable of preventing the target from cracking when the target is manufactured or when a film is formed by sputtering, and a manufacturing method thereof, and to obtain a thin film for optical information recording media that is most suitable for use as a protective film, and to manufacture the same method.

Description

technical field [0001] The invention relates to a sputtering target and a thin film for optical information recording medium (especially used as a protective film). The sputtering target has the stability of amorphous in the thin film for optical information recording medium protective layer. Direct current (DC) sputtering can be performed on the film, and the arc generation during sputtering is less and can reduce particles (dusting) or nodules generated by arc discharge, and has high density and less quality variation, which can improve mass production. Background technique [0002] In recent years, high-density recording optical disc technology, which is a rewritable high-density optical information recording medium without a magnetic head, is being developed and attracting high attention. There are three types of optical discs: ROM (read-only), R (write-once), and RW (rewritable). In particular, the phase change method used in the RW (RAM) type has attracted attention. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/547C04B35/453G11B7/26G11B7/257G11B7/254G11B7/24
CPCG11B2007/25706C04B35/453C04B35/547C04B2235/3284C04B2235/446G11B2007/25716Y02T50/67C04B2235/3217C04B2235/9646C04B2235/3286C04B2235/77G11B2007/25708C04B2235/3227G11B7/2578C04B2235/96C04B2235/786G11B2007/25715C23C14/3414C04B35/62685G11B7/266C04B2235/5436C04B2235/3225C04B2235/785G11B7/2585G11B7/26G11B7/2548Y02T50/60
Inventor 高见英生矢作政隆
Owner JX NIPPON MINING & METALS CO LTD
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