Sputtering target-backing plate assembly

A backing plate and sputtering target technology, which is applied in sputtering coating, electrical components, circuits, etc., can solve problems such as delamination of joints, inherent problems of undisclosed magnetic material targets, temperature rise, etc., to achieve stable supply, Effect of reducing raw material costs and stabilizing sputtering

Inactive Publication Date: 2012-12-05
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, there is a problem that the temperature of the sputtering target rises during sputtering, and the temperature rises above the melting point of the solder, thereby causing detachment of the joint.
[0021] However, the above-mentioned known technologies have the problem of not disclosing specific means for solving the inherent problems of magnetic material targets.

Method used

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  • Sputtering target-backing plate assembly
  • Sputtering target-backing plate assembly
  • Sputtering target-backing plate assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0082] Prepare Co powder with an average particle size of 1 μm, Cr powder with an average particle size of 2 μm, Pt powder with an average particle size of 2 μm, and SiO with an average particle size of 1 μm 2 powder and CoO powder with an average particle size of 3 μm, these raw material powders are Co-17Cr-15Pt-5SiO 2 -8CoO (mol%) was blended, and these powders were mixed with a mixer to obtain a mixed powder of a magnetic material target.

[0083]On the other hand, for the backing plate, Co powder with an average particle size of 1 μm, Cr powder with an average particle size of 2 μm, and SiO powder with an average particle size of 1 μm were prepared in the same manner. 2 powder (in addition, the particle size of these powders will not be particularly problematic, so it is not listed, but the remaining powder of the target can be used; the same below), these powders are Co-25Cr-9SiO 2 (mol %), the compounded powder is hot-pressed, and then machined to obtain a backing plate...

Embodiment 2）

[0097] Co powder with an average particle size of 1 μm, Cr powder with an average particle size of 2 μm, Pt powder with an average particle size of 2 μm, and SiO powder with an average particle size of 1 μm were prepared as in Example 1. 2 powder and CoO powder with an average particle size of 3 μm, these raw material powders are made of Co-17Cr-15Pt-5SiO as a target composition 2 -8CoO (mol %) is compounded, and these powders are mixed with a mixer to produce a powder of a magnetic material target.

[0098] On the other hand, as for the backing plate, Co powder, Cr powder, and SiO 2 powder, these powders are made into Co-25Cr-9SiO 2 (mol %), the blended powder is hot-pressed, and then machined to obtain a backing plate.

[0099] As a result of measuring the magnetic permeability of the backing plate with a B-H meter (analyzer), the magnetic permeability was 1.0. The magnetic permeability of the target is much higher than that.

[0100] The shape of the backing plate is se...

Embodiment 3）

[0104] Prepare Co powder with an average particle size of 1 μm, Cr powder with an average particle size of 2 μm, Pt powder with an average particle size of 2 μm, Ru powder with an average particle size of 3 μm, and TiO with an average particle size of 1 μm 2 powder and CoO powder with an average particle size of 3 μm, these raw material powders are Co-15Cr-18Pt-5Ru-4TiO 2 -8CoO (mol%) is compounded, and these powders are mixed with a mixer to manufacture the raw material powder of the magnetic material target.

[0105] On the other hand, as for the backing plate, Co powder, Cr powder, and SiO 2 powder, these powders are made into Co-25Cr-10SiO 2 (mol%), the backing plate material is hot-pressed, and then machined to produce a backing plate.

[0106] As a result of measuring the magnetic permeability of the backing plate with a B-H meter (analyzer), the magnetic permeability was 1.0. The magnetic permeability of the target is much higher than that.

[0107] Then, the backin...

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Abstract

Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder. It is an object of the present invention to provide a sputtering target-backing plate assembly having a high average pass through flux and allowing more stable sputtering, by disposing the raw material powder for a target on the backing plate and sintering them. By simultaneously performing sintering and bonding, a sputtering target-backing plate assembly has a shorter manufacturing process, can shorten manufacturing period, and does not cause a problem of detachment due to an increase in temperature during sputtering. In addition, it is also an object of the present invention to provide a sputtering target-backing plate assembly at a reduced cost and with an improved average pass through flux (PTF).

Description

technical field [0001] The present invention relates to a sputtering target-backing plate assembly with improved PTF (flux leakage). Background technique [0002] In recent years, as one of the film-forming methods of materials for electrical and electronic components, the sputtering method, which can easily control the film thickness and composition, has been widely used. [0003] This sputtering method uses the following principle: a positive electrode is opposed to a target as a negative electrode, and a high voltage is applied between these substrates and the target in an inert gas atmosphere to generate an electric field. At this time, ionized electrons collide with the inert gas to form plasma. The positive ions in the plasma collide with the surface of the target (negative electrode) to knock out atoms constituting the target, and the knocked-out atoms adhere to the opposing substrate to form a film. [0004] When this sputtering method is used, the shape and charact...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22F3/14B22F7/08C04B35/00C04B35/622C22C1/04C22C1/05C22C5/04C22C19/07C22C33/02C22C38/00
CPCC04B2237/123C22C38/002C04B35/645C22C19/07C23C14/3414C04B37/026C04B2237/405C22C1/0433C22C1/051C04B2237/126C04B2237/34B22F3/14H01F41/183B22F7/08
Inventor 池田祐希中村祐一郎荒川笃俊
Owner JX NIPPON MINING & METALS CORP
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