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Device and method for depositing film on SiC fiber surface

A fiber surface and thin film technology, applied in the field of vacuum coating magnetron sputtering deposition, can solve the problems of target poisoning, achieve uniform thickness, improve sputtering efficiency and ionization rate, and uniform film thickness

Inactive Publication Date: 2011-11-23
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to meet the needs of depositing thin films on the surface of continuous SiC fibers, the present invention provides a device and method for depositing thin films on the surface of SiC fibers. On the one hand, a thin film with uniform thickness can be deposited on the surface of continuous SiC fibers; problem of material poisoning to achieve continuity and stability of the deposition process

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  • Device and method for depositing film on SiC fiber surface
  • Device and method for depositing film on SiC fiber surface
  • Device and method for depositing film on SiC fiber surface

Examples

Experimental program
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Effect test

Embodiment 1

[0052] Such as Figure 1-3 As shown, the Al target is used to deposit Al on the surface of SiC fiber 2 o 3 Thin film, the purity of Al target is 99.99wt%, the size is 272×68×10mm. The cathode of the medium-frequency pulse magnetron sputtering power supply 4 is connected to the target material I1, and the anode is connected to the target material II2. The distance between the target material I and the target material II is 120mm, and permanent magnets are arranged on the inner and outer layers of the magnetron target. The magnetic field strength of the inner permanent magnet is 3000 Gauss and the magnetic field strength of the outer permanent magnet is 4500 Gauss. Wind the continuous SiC fiber on the groove of the supporting rod on the workpiece turret 3, the depth of the groove is 2mm, put it into the magnetron sputtering vacuum chamber 7, and vacuumize until the vacuum degree reaches 3×10 -3 Pa, the sputtering gas Ar gas and the reaction gas O with a volume purity of 99.99...

Embodiment 2

[0055] In this example, Cr is used as a target to deposit Cr on the surface of SiC fiber. 2 o 3 Thin film, the purity of Cr target is 99.99wt%, the size is 272×68×10mm. The cathode of the medium-frequency pulse magnetron sputtering power supply 4 is connected to the target material I1, and the anode is connected to the target material II2. The distance between the target material I and the target material II is 80mm, and permanent magnets are arranged on the inner and outer layers of the magnetron target. The magnetic field strength of the inner permanent magnet is 2800 Gauss and the magnetic field strength of the outer permanent magnet is 3800 Gauss. Wind the continuous SiC fiber on the groove of the support rod on the workpiece turret 3, the depth of the groove is 4mm, put it into the magnetron sputtering vacuum chamber 7, and vacuumize until the vacuum degree reaches 4×10 -3 Pa, the sputtering gas Ar gas and the reaction gas O with a volume purity of 99.999% are introduce...

Embodiment 3

[0057] In this example, TiO is deposited on the surface of SiC fiber by using Ti as the target. 2 The thin film, the purity of the Ti target is 99.99wt%, and the size is 272×68×10 mm. The cathode of the intermediate frequency pulse magnetron sputtering power supply 4 is connected to the target material I1, and the anode is connected to the target material II2. The distance between the target material I and the target material II is 180mm, and permanent magnets are arranged on the inner and outer layers of the magnetron target. The magnetic field strength of the layer permanent magnet is 3500 Gauss and that of the outer layer permanent magnet is 5100 Gauss. Wind the continuous SiC fiber on the groove of the supporting rod on the workpiece turret 3, the depth of the groove is 0.5 mm, put it into the magnetron sputtering vacuum chamber 7, and vacuumize until the vacuum degree reaches 2×10 -3 Pa, the sputtering gas Ar gas and the reaction gas O with a volume purity of 99.999% are...

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Abstract

The invention relates to vacuum coating magnetron sputtering deposition technology, and particularly a device and a method for depositing a film on a SiC fiber surface; on one hand, a film with a uniform thickness is deposited on a continuous SiC fiber surface; on the other hand, the problem of target material poisoning of compound film deposition is solved, and the continuity and stability of the deposition process is realized. The device is provided with a target material I, a target material II, a workpiece rotating shelf, an intermediate-frequency pulsed magnetron sputtering power supply, a magnetron sputtering vacuum chamber; the workpiece rotating shelf is disposed in the magnetron sputtering vacuum chamber; the target material I and the target material II are facingly disposed inside and outside the workpiece rotating shelf in the magnetron sputtering vacuum chamber; a cathode of the intermediate-frequency pulsed magnetron sputtering power supply is connected to the target material I; and an anode of the intermediate-frequency pulsed magnetron sputtering power supply is connected to the target material II. According to the invention, the gas flow, the reaction gas types, the sputtering time and the like in the vacuum chamber of the magnetron sputtering device are adjusted so as to realize the deposition of metals or compound films with different types and different thicknesses on a continuous SiC fiber surface, and to realize the surface modification of the SiC fiber.

Description

technical field [0001] The invention relates to vacuum coating magnetron sputtering deposition technology, more specifically, relates to a device and method for depositing thin films on the surface of continuous SiC fibers. Background technique [0002] The chemical vapor deposition (CVD) continuous SiC fiber has excellent properties such as high specific strength and high specific stiffness, and its high temperature performance can be maintained up to 1200 ° C. It is the main reinforcement of metal (Ti alloy, Ni alloy) matrix composites. Used in aviation and aerospace fields, it can significantly reduce the density of materials and improve mechanical properties. [0003] In order to reduce the surface residual stress of SiC fibers and improve the strength of fibers, the surface of SiC fibers is generally covered with a carbon-rich coating about 2.5 μm thick, but this carbon-rich coating is found in the preparation process of metal (especially Ni alloy) matrix composites. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C22C47/04C22C121/02
Inventor 肖金泉张露石南林宫骏孙超
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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