Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rotating target material

A technology of rotating target and target material, applied in the field of sputtering, can solve the problems of poor power tolerance of rotating target material, difficult to rotate target material service life, inability to take away heat, etc., so as to improve the resistance of sputtering power. efficiency, shortening time and simplifying the process

Inactive Publication Date: 2018-02-06
欧美达应用材料科技股份有限公司
View PDF10 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, using a looser material as the bonding material cannot smoothly take away the heat accumulated in the target body during sputtering, resulting in poor tolerance of the sputtering power of the rotating target, and it is difficult to effectively extend the life of the rotating target. service life

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rotating target material
  • Rotating target material
  • Rotating target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 and 2

[0031] First, a backing tube having an inner diameter of 125 mm, an outer diameter of 133 mm, and a length of 1500 mm was prepared. The materials of the backing tubes of the various examples and comparative examples are shown in Table 1 below.

[0032] Next, the raw material of the target body is formed into a hollow target body with an inner diameter of 142 mm, an outer diameter of 154 mm, and a length of 700 mm after sintering, melting, casting, processing and other processes. The materials of the target body in each example and comparative example are shown in Table 1 below. When making the hollow target body of the rotating target of Example 1, the aforementioned hollow target body is formed by indium tin oxide (ITO) through processes such as sintering and processing; when making the rotating target of Example 2 In the case of a hollow target body, molybdenum (Mo) is used to form the aforementioned hollow target body through processes such as melting, casting and processi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The present invention provides a rotating target, which includes a target body, a backing tube, and a joint, the joint is arranged between the target body and the backing tube, and the joint includes a A compressible structure and an electrically and thermally conductive adhesive, the compressible structure is a compressible blanket or a compressible sheet. Using the adapter to join the target body and the backing tube can not only help to simplify the process of rotating the target, but also can improve the sputtering power resistance of the rotating target while maintaining the bonding strength between the target body and the backing tube. Acceptance, thereby improving its sputtering efficiency.

Description

technical field [0001] The invention belongs to the technical field of sputtering, in particular to a rotating target. Background technique [0002] The magnetron sputtering method (magnetron sputtering) is to install a magnetron device in the sputtering system to change the movement of electrons in the plasma through the electromagnetic effect between the magnetic field and the electric field, so as to improve the ionization rate and sputtering efficiency. When the traditional magnetron sputtering method is used to sputter a planar target, its sputtering behavior will be concentrated on the surface area of ​​the target with the strongest tangential magnetic field, forming a racetrack-like denudation, so that the planar target is used in the magnetron sputtering process. The utilization rate is only about 35% to 50%. [0003] In order to try to solve the problems existing in the application of the planar target to the magnetron sputtering process, in the prior art, a rotati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/35
CPCC23C14/34C23C14/3407C23C14/35
Inventor 吴益升
Owner 欧美达应用材料科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com