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Metal sputtering low-temperature preparation method for crystallization TiO2 film

A metal sputtering and crystallization technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve the problems of high oxygen partial pressure, reduce the speed of TiO2 film, etc., and achieve simple equipment and substrate selection The effect of widening the scope and reducing the number of processes

Inactive Publication Date: 2008-08-06
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, in order to form a stoichiometric ratio of TiO 2 film, the oxygen partial pressure is relatively high, which makes the sputtering mode change from metal sputtering mode to transitional sputtering mode to oxide sputtering mode, which greatly reduces the preparation time of TiO2. 2 membrane velocity

Method used

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  • Metal sputtering low-temperature preparation method for crystallization TiO2 film
  • Metal sputtering low-temperature preparation method for crystallization TiO2 film
  • Metal sputtering low-temperature preparation method for crystallization TiO2 film

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Rutile TiO 2 Examples of low-temperature preparation of films by metal sputtering. The working pressure is 0.5Pa, of which the partial pressure of argon is 0.37Pa, and the partial pressure of oxygen is 0.13Pa. The gas is fed separately. The magnetron sputtering target is titanium metal with a purity of 99.98%, the DC sputtering current is 0.8A, the voltage is about negative 400 volts, and the constant current control mode, the established magnetron sputtering plasma sputters the titanium atoms of the metal titanium target shot out, part of which moves toward the substrate. The substrate is glass and grounded. The RF power input to the RF coil is 500 watts, and the ion beam density of the incident glass substrate is 3.0mA / cm 2 , with an average energy of 20eV. The time to prepare the film was 150 minutes.

[0030] When coating, the glass substrate is not deliberately heated, and the temperature rise caused by high-density ion beam irradiation is lower than 200°C. The...

Embodiment 2

[0032] Anatase TiO 2 Examples of low-temperature preparation of films by metal sputtering. The working pressure is 0.5Pa, of which the partial pressure of argon is 0.34Pa, and the partial pressure of oxygen is 0.16Pa. The gas is fed separately. The magnetron sputtering target is titanium metal with a purity of 99.98%, the DC sputtering current is 0.8A, the voltage is about negative 400 volts, and the constant current control mode, the established magnetron sputtering plasma sputters the titanium atoms of the metal titanium target shot out, part of which moves toward the substrate. The substrate is glass and grounded. The RF power input to the RF coil is 500 watts, and the ion beam density of the incident glass substrate is 3.0mA / cm 2 , with an average energy of 20eV. The time to prepare the film was 150 minutes.

[0033] When coating, the glass substrate is not deliberately heated, and the temperature rise caused by high-density ion beam irradiation is lower than 200°C. ...

Embodiment 3

[0035] Examples of thin film preparation without separate gas feeding and mixed gas feeding of argon and oxygen. The working pressure is 0.5Pa, of which the partial pressure of argon is 0.34Pa, and the partial pressure of oxygen is 0.16Pa. The gas is mixed and fed, and the argon and oxygen are mixed through the quality control flowmeter respectively, and then introduced into the figure 1 Next to the medium metal titanium target. The magnetron sputtering target is titanium metal with a purity of 99.98%, the DC sputtering current is 0.8A, the voltage is about negative 400 volts, and the constant current control mode, the established magnetron sputtering plasma sputters the titanium atoms of the metal titanium target shot out, part of which moves toward the substrate. The substrate is glass and grounded. The RF power input to the RF coil is 500 watts, and the ion beam density of the incident glass substrate is 3.0mA / cm 2 , with an average energy of 20eV. The film preparation ...

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Abstract

The invention discloses a method for preparing crystal TiO2 film with metal sputtering low temperature in the coating technical field, which comprises following steps: firstly, separately supplying argon gas and oxygen, respectively forming a local rich argon gas zone on the target material surface or a local rich oxygen zone near a substrate, secondly, sputtering titanium atoms of a metal titanium target in a metal sputtering mode, thirdly, folding induced type coupling radio frequency plasmas whose concentration grade is more than 10<11>cm-3 near the substrate, fourthly, ionizing or decomposing oxygen modules which are in the rich oxygen zone near the substrate in the induced type coupling radio frequency plasmas, generating oxygen ions and oxygen atoms, fifthly, enabling the oxygen ions and the oxygen atoms which are ionized or decomposed in the induced type coupling radio frequency plasmas to reach the substrate when in coating, taking part in reaction, and sixthly irradiating ion beams whose concentration is number milliampere / square centimetre to the substrate when in coating. The method of the invention can prepare rutile type TiO2 film or ore titanium TiO2 film on a glass substrate with high speed and low temperature.

Description

technical field [0001] The invention relates to a method in the field of coating technology, in particular to a low-temperature preparation of crystalline TiO by metal sputtering 2 membrane method. Background technique [0002] TiO 2 It has three crystal forms of rutile, anatase and brookite. Rutile TiO 2 The film has excellent optical properties and stable physical properties, and is an ideal film for optical devices; anatase TiO 2 The film has excellent photocatalytic properties and is widely used in dye-sensitized solar cells, gas sensors, sewage treatment, sterilization and antibacterial, anti-fog, deodorization, self-cleaning glass and other fields. Therefore, in recent years, the preparation of crystalline TiO 2 Membranes have received much attention. Usually, TiO is prepared by wet processing method 2 Membranes, such as sol-gel methods. However, the wet processing method to prepare TiO 2 It is difficult for the film to be uniform in a large area, and generall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/34C23C14/54
Inventor 李铸国吴毅雄
Owner SHANGHAI JIAO TONG UNIV
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