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Support layer for perovskite base thin film solar cell and production method of support layer

A thin-film solar cell and support layer technology, applied in the field of solar cells, can solve the problems of complicated cell preparation process and increased cost, and achieve the effect of easy control of the thickness of the support layer and expansion of the selection range.

Active Publication Date: 2014-03-26
深圳市华物光能技术有限公司
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  • Application Information

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Problems solved by technology

[0004] Existing perovskite-based thin-film solar cells require high-temperature sintering in the process of preparing the scaffold layer, which complicates the preparation process of the cell and increases the cost

Method used

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  • Support layer for perovskite base thin film solar cell and production method of support layer
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  • Support layer for perovskite base thin film solar cell and production method of support layer

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Embodiment Construction

[0039] Before describing the embodiments of the present invention in detail, the battery efficiency measurement method used in the present invention will be introduced first. The photoelectric performance of the battery was measured by a computer-controlled constant potential / galvanostat (Princeton Applied Research, Model 263A). Connect the photoanode and photocathode of the prepared solar cell device to the working electrode and the counter electrode terminal of the constant potential / galvanostat, respectively. The light source uses a 500W xenon lamp, and the incident light intensity is 100mW / cm 2 , the illuminated area is 0.1cm 2 . Unless otherwise specified, the photoelectric performance measurements in the following examples are all carried out at room temperature.

[0040] Terms used in the present invention, unless otherwise indicated, are to be understood according to their conventional meanings in the technical field.

[0041] figure 1 is a schematic structural vi...

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Abstract

The invention provides a support layer for a perovskite base thin film solar cell and a production method of the support layer. The support layer is in a porous structure, so that organic metal semiconductor light absorption materials in perovskite structures can be filled in. The support layer is made of polymer materials. According to the support layer and the production method, the polymer materials are used as the support layer to produce the perovskite base thin film solar cell and the support layer material is different from traditional inorganic wide bandgap semiconductors and inorganic insulators; compared with prior perovskite base thin film solar cells, the support layer has the advantages that during the production of the support layer, the support layer in the porous structure meeting conditions can be obtained without special solvents or special instruments; the support layer can only be subjected to room temperature drying instead of high-temperature treatment during production, the production process is simple, and the operation is facilitated.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a support layer for perovskite-based thin film solar cells and a preparation method thereof. Background technique [0002] A solar cell is a device that directly converts sunlight energy into electrical energy. At present, silicon-based solar cell technology is the most mature and widely used photovoltaic technology. However, due to its high production cost, people began to turn their attention to low-cost solar cell materials and technologies. New thin-film solar cells have attracted more and more attention due to their low cost and simple fabrication process. One of the keys to improving the efficiency of thin-film solar cells is to seek light-absorbing materials with low cost, wide light-absorbing range, and high absorption coefficient. Organometallic materials with a perovskite-type layered structure have attracted attention as inexpensive light-absorbing materials wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/0445H01L31/0248H01L31/18
CPCY02E10/50H10K71/00H10K77/10Y02E10/549Y02P70/50H10K85/50
Inventor 孟庆波吕松涛李冬梅罗艳红肖俊彦
Owner 深圳市华物光能技术有限公司
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