66 results about "Semiconductor Nanoparticle" patented technology

Provided is a method of efficiently producing semiconductor nanoparticles that exhibit band-edge emission with a high band-edge emission purity. The method comprises performing a first heat treatment of a first mixture comprising a silver (Ag) salt, an indium (In) salt, a compound having a gallium-sulfur (Ga—S) bond, a first gallium halide, and an organic solvent, to obtain first semiconductor nanoparticles.

An electroluminescent device includes a first electrode and a second electrode, which are spaced apart from each other (e.g., facing each other), and an emission layer disposed between the first electrode and the second electrode. The emission layer is configured to emit first light having a predetermined peak emission wavelength, and includes a semiconductor nanoparticle and a carbon nanoparticle. The carbon nanoparticle has a dimension of greater than or equal to about 2 nm and less than or equal to about 50 nm.

Provided is a method for producing semiconductor nanoparticles that exhibit band-edge luminescence and have an emission spectrum with a narrow half-width. The method for producing semiconductor nanoparticles comprises: preparing a first mixture containing an organic solvent and at least one compound selected from the group consisting of compounds having an indium (In)-sulfur (S) bond and compounds having a gallium (Ga)-sulfur (S) bond; adjusting the first mixture to a first temperature in the range of 40-180°C, and then mixing with a solution containing a silver (Ag) salt and an organic solvent to obtain a second mixture including composite particles of silver sulfide and a sulfide containing at least one of indium and gallium; and heat-treating the second mixture by adjusting the second mixture to a second temperature in the range of 130-240°C, and maintaining the second temperature for one second or more to obtain first semiconductor nanoparticles.

The application belongs to the technical field of batteries, and particularly relates to a flexible solid electrolyte and a preparation method thereof, and a secondary battery. The preparation method of the flexible solid electrolyte comprises the following steps: mixing and processing a polymer monomer, semiconductor nanoparticles, ion conductor nanoparticles, an alkali metal salt and a polymer initiator to obtain a precursor slurry; the polymer monomer is selected from monomers containing a polar group and a single-end unsaturated bond; and the precursor slurry is subjected to polymerization processing to obtain a molded flexible solid electrolyte. The preparation method of the flexible solid electrolyte of the application obtains a long-chain comb-shaped polymer with a linear carbon chain formed by unsaturated bond addition polymerization as a main chain and a monomer containing a polar group as a branch chain, and the long-chain comb-shaped polymer has excellent flexibility, elasticity, ion conductivity, voltage resistance and pyrolysis temperature and other characteristics.

A semiconductor nanoparticle, a method for producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes a template crystal including a zinc chalcogenide and is cadmium-free. The template crystal includes zinc-chalcogen bilayers stacked in a [111] direction. In high-resolution scanning transmission electron microscopy analysis, the template crystal includes a first zone, a second zone, and a mirror zone disposed between the first zone and the second zone. The mirror zone includes at least one mirror plane where a reversal occurs in the atomic arrangement direction of zinc and chalcogen elements between adjacent zinc-chalcogen bilayers. In the zinc-chalcogen bilayers of the first zone, zinc atoms and chalcogen element atoms are arranged in a first direction. In the zinc-chalcogen bilayers of the second zone, zinc atoms and chalcogen element atoms are arranged in a second direction.

An imaging device includes an array of photosensors. A film of semiconductor nanoparticles is common to the photosensors of the array. The nanoparticles are configured to be excited by light with wavelengths in a range from 280 to 1500 nanometers. Each photosensor includes a top electrode and a bottom electrode positioned on opposite sides of the film of semiconductor nanoparticles. At least some of the photosensors further include a filter configured to transmit light with wavelengths in a range from 280 to 400 nanometers, and to at least partially filter out light with wavelengths greater than 400 nanometers from reaching the photosensor. A transistor level is electrically coupled to the top and bottom electrodes of the photosensors.

Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.

A method of manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle manufactured thereby, an electronic device including the semiconductor nanoparticle, and a method of manufacturing the electronic device. The method of manufacturing the semiconductor nanoparticle includes: combining, in a medium including an organic solvent, a first semiconductor nanocrystal including silver, a Group 13 element, and a chalcogen element, or a first particle including the first semiconductor nanocrystal; a sulfur precursor; and a gallium precursor; and heating the medium to a reaction temperature to form a second semiconductor nanocrystal including sulfur and gallium on the first semiconductor nanocrystal or the first particle. The method further includes adding an acid compound to the medium, and the acid compound has a dipole moment of greater than or equal to about 2 debye and less than or equal to about 5 debye.

The invention discloses an S-type heterojunction nano catalytic material as well as a preparation method and application thereof. The S-type heterojunction nano catalytic material is prepared from a ZrO2 nano frame as a carrier; the CdS semiconductor nano-particles are loaded on the surface of the ZrO2 nano-frame; the iron-based polymer is constructed on the surfaces of the CdS semiconductor nanoparticles in situ in a coordination polymerization manner; the CdS semiconductor nanoparticles and the iron-based polymer are in close interface contact with the surface of the ZrO2 nano-frame, and an S-channel heterojunction is directly constructed and formed. The S-type heterojunction nano catalytic material can effectively promote spatial separation and directional migration of photon-generated carriers, obviously inhibit electron-hole recombination, is beneficial to multi-electron reduction reaction of CO2, can highly selectively reduce CO2 into carbon monoxide, obviously inhibits hydrogen evolution side reaction, and improves the catalytic efficiency of the carbon monoxide. The method is suitable for the fields of visible light driven CO2 resource utilization, clean energy conversion and the like, and has a good application prospect.

A display panel, a semiconductor nanoparticle composite, an electronic device and a color filter are provided. The display panel includes a light emitting panel and a color conversion panel facing the light emitting panel, where the light emitting panel includes a light emitting device configured to emit incident light including first light and second light. A maximum peak emission wavelength of the first light is present in a range of greater than or equal to about 440 nm and less than or equal to about 480 nm, and a maximum peak emission wavelength of the second light is present in a range of greater than or equal to about 500 nm and less than or equal to about 580 nm.

The invention belongs to the field of nano material preparation, and particularly provides a self-cleaning coating composition with a nanoscale inorganic core-shell structure, a self-cleaning coating and preparation methods of the self-cleaning coating composition and the self-cleaning coating. The inorganic core-shell structure semiconductor nanoparticles with a photocatalytic function are introduced into the self-cleaning coating composition, so that a coating prepared from the self-cleaning coating composition can effectively decompose organic pollutants adsorbed on the surface under a general illumination condition, and a self-cleaning effect is achieved; meanwhile, good durability and stability are achieved.

Provided is a method for producing core / shell semiconductor nanoparticles, which is characterized by having a shell formation step in which a core particle or an intermediate particle of a core / shell semiconductor nanoparticle having one or more shells, a dispersion medium, and a shell precursor are mixed and reacted so as to form a shell on at least a part of the surface of the core particle or the intermediate particle of a core / shell semiconductor nanoparticle having one or more shells, thereby obtaining a core / shell semiconductor nanoparticle. The method for producing core / shell semiconductor nanoparticles is also characterized in that the dispersion medium contains an ester compound. The present invention is capable of providing a method for producing core / shell semiconductor nanoparticles, with which it is possible to increase the quantum efficiency of core / shell semiconductor nanoparticles.

The semiconductor nanoparticle of the present invention is constituted of a compound containing Ag, Au, a chalcogen element essentially including Se, and a metal M, as essential constituent elements. The metal M is at least any one of Al, Ga, In, Tl, Zn, Cd, Hg, and Cu. The total content of Ag, Au, the chalcogen element essentially including Se, and the metal M in the compound constituting the semiconductor nanoparticle of the present invention is 95% by mass or more. The content of the metal M in the compound is preferably 1% by atom or more and 50% by atom or less. The semiconductor nanoparticle of the present invention can exhibit favorable light absorption and emission characteristics in a wavelength region including near infrared region and short-wave infrared region.

This invention relates to semiconductor nanoparticles containing an AgAuTe compound composed of Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles of this invention contain 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticles of this invention improve the light absorption characteristics in the long wavelength region and are appropriately compatible with the near-infrared and short-wave infrared regions. Specifically, the absorption wavelength at the long wavelength side of the absorption spectrum of the semiconductor nanoparticles of this invention is 1200 nm or more. (In the formula, x, y, and z are the atomic numbers of Ag, Au, and Te, 0.25 ≤ z / (x+y) ≤ 1. Furthermore, y / (x+y+z) > 0.10.)

The present application is a semiconductor nanoparticle composed of a semiconductor crystal containing a compound of Ag, Au, and S as essential constituent elements. In the AgAuS compound constituting the semiconductor nanoparticle, the total content of Ag, Au, and S is 95% by mass or more. In addition, the compound is preferably an AgAuS ternary compound represented by the general formula Ag (nx) Au (ny) S (nz) . In the general formula, n is an arbitrary positive integer. x, y, z represent the proportion of the number of atoms of each atom of Ag, Au, and S in the compound, and are real numbers satisfying 0 < x, y, z ≤ 1. In addition, x / y is 1 / 7 or more and 7 or less.

The present invention provides a quantum dot body which includes a quantum dot that produces fluorescence by means of excitation light, wherein: the quantum dot includes a core of a semiconductor nanoparticle and a shell of a semiconductor nanoparticle covering the core of the semiconductor nanoparticle; the surface of the quantum dot is covered with a metal oxide; the surface of the metal oxide is modified with a compound that has a methacryloyloxyethyl group represented by formula (I) and a hydrophilic group; and a polymer coating layer which is formed by bonding the methacryloyloxyethyl group to a reactive substituent of a polymer is provided on the outermost surface. As a result, the present invention provides a quantum dot body which has further improved stability and further improved compatibility with highly polar solvents and photosensitive resin compositions, while maintaining the fluorescence emission characteristics of a quantum dot. (R1 represents a hydrophilic group.)

The application provides a nanoscale photothermal electric coupling energy platform and a preparation method and application thereof, and belongs to the technical field of nanobiomedical materials. The method comprises the following steps: dispersing ZIF-8 particles in an alcohol solvent of silver nitrate, introducing metal silver ions through ion exchange and / or adsorption; dispersing the ZIF-8 material loaded with metal silver ions in an alcohol solvent, dropping a selenium precursor solution prepared by dissolving a sulfide and elemental selenium powder in an organic solvent together, and generating uniformly distributed metal silver selenide nanoparticles in the confined space of ZIF-8 in situ. The obtained product is composed of a ZIF-8 carrier and uniformly dispersed metal silver selenide semiconductor nanoparticles, has a particle size of 300+ / -20 nm, and has a photothermal electric effect. The energy platform can be combined with a biocompatible matrix to form a flexible patch, a film or a coating, can promote cell proliferation, migration, collagen deposition or recovery of mitochondrial function, and is particularly suitable for treating diabetic skin wounds.

To provide a semiconductor nanoparticle complex that maintains high fluorescence quantum efficiency (QY) before and after purification.SOLUTION: Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to the surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P. The ligand contains a mercapto fatty acid ester represented by the following general formula (1). The SP value of the mercapto fatty acid ester is 9.30 or less. General formula (1): HS-R1-COOR2 (1) (in general formula (1), R1 is a hydrocarbon group having 1 to 11 carbon atoms, and R2 is a hydrocarbon group having 1 to 30 carbon atoms.)SELECTED DRAWING: None

The application discloses a method for preparing a composite material by loading nanometer particles on a fiber and filling an epoxy resin and application thereof. The method is characterized by the following steps: a semiconductor nanometer particle SiC is loaded on a filler network structure of a glass fiber fabric surface; and a plasma treatment technology is combined to activate the fiber surface, so that a stable and efficient fiber loading nanometer particle structure preparation is realized. Based on the structure, an epoxy resin is infiltrated to obtain a composite material. In the composite material, the nanometer SiC particles can be used as a connecting point to form a charge dissipation path, so that the surface charge dissipation rate of the material is obviously improved, and thus the surface flashover voltage of the material is improved.

To provide a semiconductor nanoparticle exhibiting improved optical properties.SOLUTION: Provided are a semiconductor nanoparticle, a method of preparing the same, and an electronic device including the same. In the semiconductor nanoparticles, the molar ratio of gallium to indium (Ga / In) is 20 or more and 40 or less, and the semiconductor nanoparticles have a quantum yield of 70% or more and 100% or less.SELECTED DRAWING: Figure 8a

The present invention is a quantum dot body comprising a quantum dot that emits fluorescence in response to excitation light, the quantum dot body being characterized in that the quantum dot comprises a core of a semiconductor nanoparticle and a shell of a semiconductor nanoparticle that covers the core of the semiconductor nanoparticle, wherein the surface of the quantum dot is modified by a compound represented by formula (I) and having a methacryloyloxyethyl group and a hydrophilic group. As a result, a quantum dot body is provided that can maintain a high light emission efficiency and that exhibits improved dispersibility in highly polar solvents. (R1 represents a hydrophilic group.)

A semiconductor nanoparticle, and a method for producing the semiconductor nanoparticle, and a composite, a color conversion panel, and a display panel including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, a Group 13 metal including indium and gallium, and a chalcogen element including sulfur and optionally selenium, the semiconductor nanoparticle is configured to emit a green light with an emission peak wavelength of 500 nanometers to 580 nanometers, and a full width at half maximum of about 5 nm to about 70 nm. The semiconductor nanoparticle exhibits a quantum yield of greater than or equal to about 50%, and includes a mole ratio (In+Ga):Ag of about 1:1 to about 3.5:1.

An electroluminescent device that includes a first electrode and a second electrode spaced apart from each other, a light emitting layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the light emitting layer and the second electrode, and an organic layer disposed on the electron transport layer. The light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes a plurality of metal oxide nanoparticles, and the organic layer includes a polymeric acid compound.

The purpose of the present invention is to provide a quantum dot having a shell structure that is suitable for group I-III-VI chalcopyrite-type semiconductor nanoparticles.　A quantum dot (1) according to the present invention comprises a core (2) that includes a group I-III-VI chalcopyrite structure and a shell (4) that contains Zn-S, and is characterized by comprising, between the core (2) and the shell (4), a first buffer layer (3) that has a lattice constant between the lattice constant of the core (2) and the lattice constant of the shell (4).

The invention discloses an optical assembly with quantum dots, and relates to the technical field of optical assemblies, and the optical assembly is technically characterized in that the optical assembly comprises a quantum dot film layer, the quantum dot film layer comprises an upper surface layer and a lower surface layer, the upper surface layer and the lower surface layer are connected through a transparent bonding layer, and a plurality of corresponding luminous semiconductor nanoparticles are embedded in the upper surface layer and the lower surface layer; the lower transparent film layer is arranged below the lower surface layer; the upper transparent film layer is arranged above the upper surface layer; the outer protective film covers the upper transparent film layer and extends to cover the side surface of the quantum dot thin film layer; the light source module is arranged below the lower transparent film layer and comprises a substrate, and a plurality of light emitting diodes are arranged on the substrate; the driving circuit is electrically connected with the light emitting diode in the light source module and is used for providing stable current and voltage for the light emitting diode; the luminous effect and the service life can be guaranteed.

Disclosed is a quantum dot composition which contains quantum dots that emit fluorescence by excitation light, and which is characterized in that each quantum dot is composed of a semiconductor nanoparticle core and a semiconductor nanoparticle shell that do not contain Cd and Pb, and the surface of each quantum dot is covered with a metal oxide. The surface of the quantum dot or the surface of the metal oxide is modified by a phosphonic acid derivative. As a result, provided is a quantum dot composition in which degradation of fluorescence emission efficiency is suppressed even if quantum dots having low toxicity are used.

An electroluminescent device, a method of manufacturing the electroluminescent device, and a display apparatus are provided. The electroluminescent device includes: a first electrode and a second electrode spaced apart from each other (e.g., facing each other); and an emission layer disposed between the first electrode and the second electrode. The emission layer is configured to emit first light having a predetermined peak emission wavelength, and includes semiconductor nanoparticles and carbon nanoparticles. The carbon nanoparticles have a size greater than or equal to about 2 nm and less than or equal to about 50 nm.

A method for producing a coated semiconductor nanoparticle, including a step of coating a metal oxide on a surface of a semiconductor nanoparticle, characterized in that the metal oxide is coated on the surface of the semiconductor nanoparticle by microwave irradiation treatment of a metal oxide precursor. Thus, a method for efficiently producing a coated semiconductor nanoparticle in which deterioration of fluorescence emission efficiency is suppressed is provided.

The semiconductor nanoparticle of the present invention is constituted of a compound containing Ag, Au, a chalcogen element essentially including Se, and a metal M, as essential constituent elements. The metal M is at least any one of Al, Ga, In, TI, Zn, Cd, Hg, and Cu. The total content of Ag, Au, the chalcogen element essentially including Se, and the metal M in the compound constituting the semiconductor nanoparticle of the present invention is 95% by mass or more. The content of the metal M in the compound is preferably 1% by atom or more and 50% by atom or less. The semiconductor nanoparticle of the present invention can exhibit favorable light absorption and emission characteristics in a wavelength region including near infrared region and short-wave infrared region.