14 results about "Semiconductor Nanoparticle" patented technology

An imaging device includes an array of photosensors. A film of semiconductor nanoparticles is common to the photosensors of the array. The nanoparticles are configured to be excited by light with wavelengths in a range from 280 to 1500 nanometers. Each photosensor includes a top electrode and a bottom electrode positioned on opposite sides of the film of semiconductor nanoparticles. At least some of the photosensors further include a filter configured to transmit light with wavelengths in a range from 280 to 400 nanometers, and to at least partially filter out light with wavelengths greater than 400 nanometers from reaching the photosensor. A transistor level is electrically coupled to the top and bottom electrodes of the photosensors.

A method of manufacturing a semiconductor nanoparticle, a semiconductor nanoparticle manufactured thereby, an electronic device including the semiconductor nanoparticle, and a method of manufacturing the electronic device. The method of manufacturing the semiconductor nanoparticle includes: combining, in a medium including an organic solvent, a first semiconductor nanocrystal including silver, a Group 13 element, and a chalcogen element, or a first particle including the first semiconductor nanocrystal; a sulfur precursor; and a gallium precursor; and heating the medium to a reaction temperature to form a second semiconductor nanocrystal including sulfur and gallium on the first semiconductor nanocrystal or the first particle. The method further includes adding an acid compound to the medium, and the acid compound has a dipole moment of greater than or equal to about 2 debye and less than or equal to about 5 debye.

This invention relates to semiconductor nanoparticles containing an AgAuTe compound composed of Ag, Au, and Te as essential constituent elements. The AgAuTe compound constituting the semiconductor nanoparticles is represented by the following formula. The semiconductor nanoparticles of this invention contain 90 atomic% or more of the AgAuTe compound. The semiconductor nanoparticles of this invention improve the light absorption characteristics in the long wavelength region and are appropriately compatible with the near-infrared and short-wave infrared regions. Specifically, the absorption wavelength at the long wavelength side of the absorption spectrum of the semiconductor nanoparticles of this invention is 1200 nm or more. (In the formula, x, y, and z are the atomic numbers of Ag, Au, and Te, 0.25 ≤ z / (x+y) ≤ 1. Furthermore, y / (x+y+z) > 0.10.)

The present application is a semiconductor nanoparticle composed of a semiconductor crystal containing a compound of Ag, Au, and S as essential constituent elements. In the AgAuS compound constituting the semiconductor nanoparticle, the total content of Ag, Au, and S is 95% by mass or more. In addition, the compound is preferably an AgAuS ternary compound represented by the general formula Ag (nx) Au (ny) S (nz) . In the general formula, n is an arbitrary positive integer. x, y, z represent the proportion of the number of atoms of each atom of Ag, Au, and S in the compound, and are real numbers satisfying 0 < x, y, z ≤ 1. In addition, x / y is 1 / 7 or more and 7 or less.

The application provides a nanoscale photothermal electric coupling energy platform and a preparation method and application thereof, and belongs to the technical field of nanobiomedical materials. The method comprises the following steps: dispersing ZIF-8 particles in an alcohol solvent of silver nitrate, introducing metal silver ions through ion exchange and / or adsorption; dispersing the ZIF-8 material loaded with metal silver ions in an alcohol solvent, dropping a selenium precursor solution prepared by dissolving a sulfide and elemental selenium powder in an organic solvent together, and generating uniformly distributed metal silver selenide nanoparticles in the confined space of ZIF-8 in situ. The obtained product is composed of a ZIF-8 carrier and uniformly dispersed metal silver selenide semiconductor nanoparticles, has a particle size of 300+ / -20 nm, and has a photothermal electric effect. The energy platform can be combined with a biocompatible matrix to form a flexible patch, a film or a coating, can promote cell proliferation, migration, collagen deposition or recovery of mitochondrial function, and is particularly suitable for treating diabetic skin wounds.

Disclosed are electroluminescent devices, methods of making the same, and display devices comprising the same. The electroluminescent device comprises a first electrode and a second electrode; an emissive layer disposed between the first electrode and the second electrode; an electron transport layer between the emissive layer and the second electrode; and a hole auxiliary layer between the emissive layer and the first electrode. The emissive layer comprises semiconductor nanoparticles and is configured to emit a first light. The electron transport layer comprises metal oxide nanoparticles having a size greater than or equal to about 1 nm and less than or equal to about 30 nm. The metal oxide nanoparticles comprise zinc and optionally a Group IIA metal, Zr, W, Li, Ti, Y, Al, gallium, indium, tin (Sn), cobalt (Co), vanadium (V), or a combination thereof. The hole auxiliary layer comprises a hole injection / transport material and a base quencher comprising an alkali metal hydroxide, an ammonium hydroxide compound, an amine compound, or a combination thereof.

A semiconductor nanoparticle, and a method for producing the semiconductor nanoparticle, and a composite, a color conversion panel, and a display panel including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, a Group 13 metal including indium and gallium, and a chalcogen element including sulfur and optionally selenium, the semiconductor nanoparticle is configured to emit a green light with an emission peak wavelength of 500 nanometers to 580 nanometers, and a full width at half maximum of about 5 nm to about 70 nm. The semiconductor nanoparticle exhibits a quantum yield of greater than or equal to about 50%, and includes a mole ratio (In+Ga):Ag of about 1:1 to about 3.5:1.

The semiconductor nanoparticle of the present invention is constituted of a compound containing Ag, Au, a chalcogen element essentially including Se, and a metal M, as essential constituent elements. The metal M is at least any one of Al, Ga, In, TI, Zn, Cd, Hg, and Cu. The total content of Ag, Au, the chalcogen element essentially including Se, and the metal M in the compound constituting the semiconductor nanoparticle of the present invention is 95% by mass or more. The content of the metal M in the compound is preferably 1% by atom or more and 50% by atom or less. The semiconductor nanoparticle of the present invention can exhibit favorable light absorption and emission characteristics in a wavelength region including near infrared region and short-wave infrared region.

An electroluminescent device including a first electrode and a second electrode facing each other; a light emitting layer disposed between the first electrode and the second electrode; and an electron transport layer disposed between the light emitting layer and the second electrode. The light emitting layer includes a plurality of semiconductor nanoparticles, and the electron transport layer includes a plurality of zinc oxide nanoparticles, the zinc oxide nanoparticles further include magnesium and gallium.

An ink composition, a production method thereof, a composite prepared therefrom, and devices including the same are provide. The ink composition including a semiconductor nanoparticle and a polymerizable monomer. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, a Group 13 metal including indium and gallium, and a Group 16 element including sulfur, and the ink composition further comprises a metal halide and a first organic ligand including a compound or a moiety represented by R1—COOA, wherein R1 is a first organic group, and A represents hydrogen or a portion linked to a surface of the semiconductor nanoparticle.

A light filtering glass container including a glass container coated with a light filtering coating obtained by curing a polymerizable composition including semi-conductive nanoparticles and / or UV light absorbers. The absorbance through a 5-micrometer thick light filtering coating is greater than 0.15 for each light wavelength ranging from 350 nm to λcut, λcut being in the range from 420 nm to 480 nm or greater than 0.5 for each light wavelength ranging from 350 nm to λcut, λcut being in the range from 410 nm to 480 nm. The difference of lightness between the uncoated glass container and the glass container with the light filtering coating is lower than 5.

The present application relates to a semiconductor nanoparticle containing an AgCu chalcogenide represented by the following formula composed of Ag, Cu, and a chalcogen element (Ch). In the present application, it is necessary to contain Te as the chalcogen element. By applying Te, which is larger in mass among chalcogen elements, the photoresponsivity shifts to the long wavelength side. The semiconductor nanoparticle according to the present application contains 90 atomic% or more of the AgCu chalcogenide, and the absorption edge wavelength on the long wavelength side of the absorption spectrum becomes 1200 nm or more. In the formula, Ch is a chalcogen element. x, y, z are the atomic numbers of Ag, Cu, and the chalcogen element, and 0.2 ≤ z / (x+y) ≤ 1. In addition, 1.0 ≤ x / y ≤ 10.0.

This invention relates to a silicone rubber-based nonlinear conductive insulating composite material composition comprising at least one organopolysiloxane compound A, each molecule of which contains at least two alkenyl groups bonded to silicon atoms; at least one organohydrogen-based polysiloxane compound B; at least one catalyst C; optionally, at least one organosilicon resin D; at least one reinforcing filler E1; at least one conductive filler E2 and / or at least one semiconductor nanoparticle material E3; at least one organic conductive additive F; and optionally, at least one crosslinking inhibitor G. The invention also relates to a silicone rubber-based nonlinear conductive insulating composite material obtained by crosslinking and curing the composition; articles obtained from the composition or the composite material; and the use of the composition or the composite material in the preparation of cable accessories, particularly for high-voltage direct current transmission.