40 results about "Semiconductor Nanoparticle" patented technology

A system and method for optimizing the systemic delivery of growth-arresting lipid-derived bioactive drugs or gene therapy agents to an animal or human in need of such agents utilizing nanoscale assembly systems, such as liposomes, resorbable and non-aggregating nanoparticle dispersions, metal or semiconductor nanoparticles, or polymeric materials such as dendrimers or hydrogels, each of which exhibit improved lipid solubility, cell permeability, an increased circulation half life and pharmacokinetic profile with improved tumor or vascular targeting.

A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.

Provided is a semiconductor nanoparticle-encapsulating vinyl polymer including vinyl polymer particles; and semi-conductor nanoparticles, uniformly dispersed in the vinyl polymer particles, having an average particle size of 1 to 150 nm, wherein the semiconductor nanoparticles are encapsulated by the vinyl polymer particles. Provided is also a mixture of the semiconductor nanoparticle-encapsulating vinyl polymer with a commercially available vinyl polymer. In the nanoparticle-encapsulating vinyl polymer and the mixture, since the semiconductor nanoparticles are encapsulated by the vinyl polymer particles, they are highly dispersed even in vinyl polymer products. Therefore; an aggregation phenomenon of semi-conductor nanoparticles that may be caused by physical mixing of semiconductor nanoparticles and a commercially available vinyl polymer can be prevented, thereby remarkably increasing a reduction in dioxin emission during incineration of the wastes of vinyl polymer products. Furthermore, the semiconductor nanoparticles of the semiconductor nanoparticle-encapsulating vinyl polymer can remarkably increase photodegradation efficiency due to the photocatalytic activity of the nanoparticles. In addition, the semiconductor nanoparticles of the semiconductor nanoparticle-encapsulating vinyl polymer can serve as fillers, thereby enhancing mechanical properties such as tensile strength and modulus of elasticity without lowering impact strength. In particular, in a flexible poly vinylchloride compound manufactured using semiconductor nanoparticles-encapsulating polyvinylchloride and a commercially available phthalate-based low-molecular weight liquid phase plasticizer, a plasticizer migration phenomenon can be prevented by adsorptivity of highly dispersed semiconductor nanoparticles.

The invention discloses a method for in-situ doping of thin film materials. Elements which can be doped comprise selenium (Se), sodium (Na), sulfur (S), tin (Sn), indium (In), antimony (Sb), gallium (Ga), tellurium (Te), molybdenum (Mo), and arsenic (As). According to the invention, ligands containing the elements are connected onto the surfaces of semiconductor nanoparticles and applied onto the surface of a substrate, and then the nanoparticles are recrystallized by annealing to form a thin film. Thus, the in-situ doping of the elements is realized. For CIGS nanoparticles, concrete in-situ doping working procedures are invented, comprising ligand synthesis and exchange; and direct doping and indirect doping are selected on account of different materials. In this way, the in-situ doping of the CIGS nanoparticles in a controllable doping ratio is realized (in the figure, the element X stands for one or more selected from the group consisting of selenium (Se), sodium (Na), sulfur (S), tin (Sn), indium (In), antimony (Sb), gallium (Ga), tellurium (Te), molybdenum (Mo), and arsenic (As)).

A method for coating particles and the coated particles obtained thereby are disclosed. The particles are first placed in a solution of a first monomer that forms a self-assembling monolayer on the particles thereby forming coated particles. The coated particles are then suspended in a second solution that includes a chemical species and an initiator for oxidative polymerization. The chemical species has a higher oxidation potential than the monomers. In addition, the chemical species form a homopolymer in the presence of the initiator that is covalently bound to the first monomers. Particles of semiconductors such as Ti02, Si02, Sn02, Al203 can be coated with polymers that alter the bandgap energy of the semiconducting particles and / or provide other useful surface chemistries.

The present invention provides a thin-film fluorescent material in which semiconductor nanoparticles in a stable condition maintain a high fluorescence quantum yield and can be held at a high concentration in a glass matrix. The present invention also provides optical devices using the thin-film fluorescent material, such as high-brightness displays and lighting systems. The present invention relates to a fluorescent material, in which semiconductor nanoparticles with a fluorescence quantum yield of 15% or more and a diameter of 2 to 5 nanometers are dispersed in a glass matrix at a concentration of 5×10−4 mol / l or more and a method for manufacturing the same.

A field effect transistor (FET) with a source electrode and a drain electrode distanced apart from each other on a semi-conductor substrate, and a gate electrode consisting of a uniform layer of reduced graphene oxide encapsulated semiconductor nanoparticles (rGO-NPs), wherein the gate electrode is disposed between and contacts both the source and drain electrodes. Methods of making and assay methods using the FETs are also disclosed, including methods in which the rGO-NPs are functionalized with binding partners for biomarkers.

The invention discloses a detection method and application of an ultralow-temperature enhanced Raman spectrum signal. The method comprises the following steps: adsorbing a substance to be detected ona surface enhanced Raman spectrum substrate, and carrying out laser Raman spectrum test on the substance to be detected under the condition of 0.1-287K; wherein the surface enhanced Raman spectrum substrate is semiconductor nanoparticles; the semiconductor nanoparticles including metal oxide nanoparticles, and the metal oxide nanoparticles having surface defects. The method provided by the invention has very good universality and very high SERS detection sensitivity.

It is to provide an inorganic thin film of titanium dioxide or the like which is controlled at the nanoscale and a three-dimensional structure of a functional material such as semiconductor nanoparticles. A three-dimensional structure of an inorganic material is manufactured by introducing onto a surface of an inorganic substrate ferritin presenting on its surface a plurality of inorganic material-binding peptides; binding the ferritin in a monolayer onto the inorganic substrate; introducing an inorganic material onto the ferritin which is bound in a monolayer, while the inorganic material-binding peptides is having a binding and / or biomineralization ability for the inorganic material; forming a biomineral layer utilizing the biomineralization ability of the inorganic material-binding peptides; and subsequently repeating one or more times the steps (a) and (b) of a multilayering operation: (a) introducing onto the biomineral layer thus formed the ferritin having a binding ability to the biomineral layer, and binding the ferritin in a monolayer onto the biomineral layer; (b) introducing the inorganic material onto the surface of the ferritin which is bound in a monolayer, and forming a biomineral layer.

Composite electrode materials for DSSCs, DSSCs incorporating the composite electrode materials and methods for making the composite electrode materials are provided. The composite electrode materials are composed of semiconductor nanofibers embedded in a matrix of semiconductor nanoparticles. DSSCs incorporating the composite electrode materials exhibit both increased carrier transport and improved light harvesting, particularly at wavelengths of 600 nm or greater (e.g., 600 nm to 800 nm or greater).

The title of the invention is metal-semiconductor hybrid structures, syntheses thereof, and uses thereof. Aspects of the present disclosure generally relate to semiconductor nanoparticles, metal-semiconductor hybrid structures, processes for producing semiconductor nanoparticles, processes for producing metal-semiconductor hybrid structures, and processes for producing conversion products. In an aspect is provided a process for producing a metal-semiconductor hybrid structure that includes introducing a first precursor comprising a metal from Group 11-Group 14 to an amine and an anion precursor to form a semiconductor nanoparticle comprising the Group 11-Group 14 metal; introducing a second precursor comprising a metal from Group 7-Group 11 to the semiconductor nanoparticle to form a metal-semiconductor mixture; and introducing the metal-semiconductor mixture to separation conditions to produce the metal-semiconductor hybrid structure. In another aspect is provided a metal-semiconductor hybrid structure that includes a first component comprising a metal from Group 11-Group 14 and an element from Group 15-Group 16; and a second component comprising a metal from Group 7-Group 11.

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).

The invention discloses a primer and a primer probe combination of fluorescent quantitative nanoparticle PCR for detecting novel coronavirus and application of the primer and the primer probe combination. The 5' end of the primer is modified with nanoparticles, and the nanoparticles are conductor or semiconductor nanoparticles. The invention further provides the primer probe combination containing the primer and a kit, and provides a non-diagnostic purpose detection method of the novel coronavirus 2019-nCoV. The primer probe combination is used, a PCR instrument containing a laser heating device is used for detection, the primer with the surface modified with silver nanoparticles is used, rapid temperature rising and lowering are conducted through specific wavelength laser heating, the qPCR amplification time can be shortened to be within 30min, and fluorescent quantitative PCR needs 60-120min; and the detection sensitivity of the primer is as low as 1copy and is improved by 10 times compared with fluorescent quantitative PCR, fluorescent quantitative nanoparticle PCR can inhibit non-specific amplification of virus SARS with high homology with the novel coronavirus, and the specificity of the system is improved.

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.