CIGS in-situ doping method

An in-situ doping and elemental technology, applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as increasing production conditions and increasing production costs

Inactive Publication Date: 2014-04-09
李远 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These two greatly increase the production cost and the requirements for production conditions

Method used

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  • CIGS in-situ doping method

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0011] Embodiment 1 In-situ doping of ligand exchange of S element (via Na 2 S)

[0012] Step 1: Synthesis of CIGS nanoparticles

[0013] There are many methods for synthesizing CIGS nanoparticles. This embodiment adopts one of them, but it is not only possible to implement this one. This type of implementation requires the introduction of two ligands. One ligand (referred to as the initial ligand) is used to synthesize CIGS nanoparticles, and the other ligand (referred to as the exchange ligand) is used to carry the required specific elements (Se, Na, S, Sn, Se , In, Sb, Ga, Te, Mo, As, etc.).

[0014] At room temperature, 104.8mg of copper acetylacetonate (Copper(II) acetylacetonate, referred to as Cu(acac) 2 ), 73.4mg of gallium acetylacetonate (Gallium(IlI) acetylacetonate for short Ga(acac) 3 ) And 82.4mg of Indium(III)acetylacetonate In(acac) 3 ) Mix, and add 10 mL of Oleylamine (Oleylamine, OLA for short, is an initial ligand). Then put the prepared solution in a vacuum env...

Embodiment approach 2

[0024] Embodiment 2 In-situ doping of ligand exchange of S element ((NH 4 ) 2 S)

[0025] Step 1: Synthesis of CIGS nanoparticles

[0026] Same as the method described in step 1 in embodiment 1.

[0027] Step two exchange ligands

[0028] Add 20g of aqueous ammonium sulfide (NH 4 ) 2 S) was dissolved in 100 mL of distilled water, and placed in a magnet for stirring to obtain solution 1. Dissolve 10 mg CIGS nanoparticles in 10 mL of CH 3 In Cl, solution 2 is obtained. Add solution 2 to solution 1 dropwise. The mixed solution was kept at 45 degrees Celsius for 8 hours.

[0029] Then comes the cleaning process: first remove the above liquid, leaving only the following CIGS:Sn solution. Add an equal volume of isopropanol. Centrifuge at 5000 rpm for 10 minutes to discard the supernatant, dissolve the following precipitate in 30 mL of distilled water, and add an equal volume of isopropanol again. Then repeat the cleaning process again (centrifuge at 5000 rpm for 10 minutes. Discard the ...

Embodiment approach 3

[0032] Embodiment 3 In-situ doping of ligand exchange of Sn element (Na 4 Sn 2 S 6 )

[0033] Step 1: Synthesis of CIGS nanoparticles

[0034] Same as the method described in Step 1 in Embodiment 1.

[0035] Step two exchange ligands

[0036] 28.8g of aqueous sodium sulfide (Na 2 The S·9H2O) solid was dissolved in 80 mL of distilled water, heated to 45 degrees Celsius, and placed in a magnet for stirring to obtain solution 1. 10.51g of water-containing tin chloride (SnCl 4 ·5H2O) The solid was dissolved in 20 mL of distilled water to obtain solution 2. Add solution 2 to solution 1 dropwise. The mixed solution was kept at 45 degrees Celsius for 8 hours.

[0037] Stop heating and add 50 mL methanol solution (or 100 mL acetone solution) to the mixed solution after cooling. (You can stir for another 8 hours. If you find a white precipitate, just remove the transparent liquid on it.) Then store in the refrigerator for 48 hours. White crystals of sodium thiostannide (Na 4 Sn 2 S 6 ). Use...

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Abstract

The invention discloses a method for in-situ doping of thin film materials. Elements which can be doped comprise selenium (Se), sodium (Na), sulfur (S), tin (Sn), indium (In), antimony (Sb), gallium (Ga), tellurium (Te), molybdenum (Mo), and arsenic (As). According to the invention, ligands containing the elements are connected onto the surfaces of semiconductor nanoparticles and applied onto the surface of a substrate, and then the nanoparticles are recrystallized by annealing to form a thin film. Thus, the in-situ doping of the elements is realized. For CIGS nanoparticles, concrete in-situ doping working procedures are invented, comprising ligand synthesis and exchange; and direct doping and indirect doping are selected on account of different materials. In this way, the in-situ doping of the CIGS nanoparticles in a controllable doping ratio is realized (in the figure, the element X stands for one or more selected from the group consisting of selenium (Se), sodium (Na), sulfur (S), tin (Sn), indium (In), antimony (Sb), gallium (Ga), tellurium (Te), molybdenum (Mo), and arsenic (As)).

Description

Technical field [0001] The invention relates to a copper indium gallium selenium (CIGS) photovoltaic material and a production method thereof. Specifically, the patent of the present invention provides an in-situ doping method by adding specific elements (selenium (Se), sodium (Na), sulfur (S), tin (Sn), selenium (Se), indium) Ligands of (In), antimony (Sb), gallium (Ga), tellurium (Te), molybdenum (Mo), arsenic (As)) are linked to the surface of CIGS nanoparticles and recrystallized by annealing. Doping into CIGS internal. Thereby greatly improving the photoelectric properties of CIGS film. This CIGS photoelectric film can be used to prepare a variety of semiconductor devices, such as photovoltaic cells, field effect tubes, etc. Background technique [0002] As an almost endless green renewable energy, solar cells have become the main pillar of new energy. CIGS thin-film photovoltaic cells have many advantages such as pollution-free, high performance and long life. In order...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18
CPCH01L21/228H01L31/18Y02P70/50
Inventor 李远黄文骁黄晖辉
Owner 李远
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