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Quantum dot light emitting devices

A quantum dot light emitting and device technology, which is applied in the direction of electric solid-state devices, semiconductor devices, organic semiconductor devices, etc., can solve problems such as lack of

Active Publication Date: 2019-02-12
DOW GLOBAL TECH LLC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One limitation of QLEDs is the lack of a suitable hole-transport layer (HTL) that can efficiently inject charges into the quantum dot layer.

Method used

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Examples

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example

[0089] The following examples illustrate embodiments of the disclosure. All parts and percentages are by weight unless otherwise indicated.

[0090] All solvents and reagents are available from commercial vendors such as Sigma-Aldrich, Tokyo Chemical Industries (TCI), and Alfa Aesar and are used in the highest available purity, and / Or when necessary, recrystallize before use. Dry solvents were obtained from in-house purification / distribution systems (hexane, toluene, and tetrahydrofuran) or purchased from Sigma-Aldrich. All experiments involving "water-sensitive compounds" were performed in "oven-dried" glassware under a nitrogen atmosphere or in a glove box.

[0091] The following standard analytical equipment and methods were used in the examples.

[0092] Gel Permeation Chromatography (GPC)

[0093] Gel Permeation Chromatography (GPC) was used to analyze the molecular weight of the polymers. 2 mg of HTL polymer was dissolved in 1 mL THF. The solution was filtered t...

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Abstract

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II- VI compounds, Group II-V compounds, Group III- VI compounds, Group III-V compounds, Group IV- VI compounds, Group I-III- VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomerstructure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.

Description

technical field [0001] The present disclosure relates to an electronic device, especially a quantum dot light emitting diode. Background technique [0002] Quantum dot light emitting diodes (QLEDs) are electroluminescent devices employing multiple organic and inorganic layers combined with an emissive layer of semiconductor nanoparticles, sometimes referred to as quantum dots (QDs). The layer of quantum dots in a QLED is capable of emitting light when an electrical input is applied to the device. Therefore, QLEDs can be used as light sources in displays and general lighting applications. One limitation of QLEDs is the lack of a suitable hole-transport layer (HTL) that can efficiently inject charges into the quantum dot layer. Insufficient charges injected into quantum dots lead to high operating voltage and low light generation efficiency of QLED devices. [0003] Therefore, there is an ongoing need for new hole transport materials that enable improved QLED devices with h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54
CPCH10K50/115H10K50/15H10K85/115H10K50/17H10K50/81H10K50/82H10K71/00H10K71/12H10K71/60H10K2102/00H10K2102/103H10K2102/351H10K2102/361
Inventor A·N·索科洛夫B·古德费洛R·D·格里格L·P·斯宾塞J·W·克雷默D·D·德沃尔S·穆克霍培德海耶P·特雷夫纳斯三世
Owner DOW GLOBAL TECH LLC
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