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Method for preparing metal nano-crystal thin film

A metal nanocrystal and metal thin film technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of complex preparation process of metal nanocrystal material, poor compatibility of silicon plane process, single material type, etc. , to achieve the effects of improving process stability and preparation efficiency, good charge trapping and storage characteristics, and simplifying the preparation process

Active Publication Date: 2008-02-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The preparation of metal nanocrystalline materials by the above methods generally has complex preparation processes, high preparation costs, low preparation efficiency, single material types, and poor compatibility with traditional silicon plane processes, which is not conducive to the application in device preparation.

Method used

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  • Method for preparing metal nano-crystal thin film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0043] Growth of a layer of SiO on Si substrate by thermal oxidation 2 insulating dielectric, and then use magnetron sputtering on SiO 2 A layer of 2 to 3nm thick Ni metal film is grown on the insulating medium, and finally on the N 2 Rapid annealing at 800°C for 30 seconds to form a Ni nanocrystalline film. As shown in FIG. 4 , FIG. 4 is a scanning electron micrograph of a Ni nanocrystalline film prepared according to the first embodiment of the present invention. In Fig. 4, the diameter of Ni nanocrystals is 5 to 20 nm, and the density is 3×10 11 / cm 2 .

Embodiment 2

[0045] Growth of a layer of SiO on Si substrate by thermal oxidation 2 insulating dielectric, and then use magnetron sputtering on SiO 2 A layer of WSi with a thickness of 2 to 3 nm is grown on the insulating medium 2 metal film, finally in N 2 rapid annealing at 1100°C for 30 seconds to form WSi 2 nanocrystalline film. As shown in Figure 5, Figure 5 is a WSi prepared according to the second embodiment of the present invention 2 Scanning electron micrographs of nanocrystalline thin films. Figure 5, WSi 2 The diameter of nanocrystals is 10 to 30nm, and the density is 1×10 11 / cm 2 .

Embodiment 3

[0047] Growth of a layer of SiO on Si substrate by thermal oxidation 2 insulating dielectric, and then use magnetron sputtering on SiO 2 A layer of WTi metal film with a thickness of 2 to 3 nm is grown on the insulating dielectric, and finally the 2 Rapid annealing at 800°C for 30 seconds to form a WTi nanocrystalline film. As shown in FIG. 6 , FIG. 6 is a scanning electron micrograph of a WTi nanocrystalline thin film prepared according to the third embodiment of the present invention. In Fig. 6, the diameter of WTi nanocrystal grains ranges from 10 to 40 nm, and the density is 1.5×10 11 / cm 2 .

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Abstract

The invention discloses a method of preparing a metal nano-crystal film, which includes: A. a layer of metal film is deposited on an insulating substrate; B. conductin fast annealing with high temperature in the inert gas, so as to form the separated metal nano-crystal film. The metal nano-crystal film prepared by the invention has very good charge retention and storage characteristics as well as processing compatibility with traditional silicon planes, and is very applicable in preparing high-performance semiconductor memory components. The method of preparing a metal nano-crystal film provided by the invention greatly simplifies the preparing technology, reduces the preparing cost, improves the technological stability and preparing efficiency, and is very good for wide promotion and application of the invention.

Description

technical field [0001] The invention relates to the technical field of nano-electronic devices and nano-processing, in particular to a method for preparing a metal nano-crystal thin film. Background technique [0002] Due to the small average particle size, many surface atoms, large specific surface area, and high surface energy of nanocrystalline materials, their properties are different from single atoms, molecules, and ordinary particle materials, showing unique quantum size effects, surface and Interface effects, quantum tunneling effects and other characteristics, thus showing completely different properties from conventional crystal materials. [0003] This is mainly reflected in electrical properties, optical properties, magnetic properties, mechanical properties, thermal properties, chemical properties and so on. Among various nanocrystalline materials, silicon nanocrystalline films and some metal nanocrystalline films are very suitable for preparing high-performanc...

Claims

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Application Information

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IPC IPC(8): C23C14/18C23C14/34C23C14/58C23C14/54
Inventor 龙世兵李志刚刘明陈宝钦
Owner SEMICON MFG INT (SHANGHAI) CORP
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