New structure crystal silicon solar energy battery

A technology of solar cells and crystalline silicon, which is applied in the field of solar energy applications, and can solve the problems of carrier depletion in the emission area, reduction of cell efficiency, and drop in cell efficiency

Inactive Publication Date: 2007-04-18
BEIJING SOLAR ENERGY INST
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Problems solved by technology

But the disadvantage of this kind of battery is: high-temperature diffusion may cause more defects in silicon materials, and if there is pollution in the high-temperature process, the efficiency of the battery will be greatly reduced, so higher requirements are placed on materials and production environments.
If the amorphous emitter region is too thin, even the carrier in the emitter region will be completely depleted, which will reduce the efficiency of the battery
In addition, since the front of the battery must use a transparent conductive film, it will also cause a light loss of about 10% (generally, the transmittance of a transparent conductive film is up to 90%)

Method used

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Embodiment Construction

[0012] Technical solution: high-quality N-type monocrystalline silicon wafer (3) is used, the thickness is less than 300 μm, and the resistivity is 5-500 Ωcm. After the surface is cleaned and textured by standard industrial processes, a layer of highly doped N + Layer (4), with a sheet resistance of 100-300Ω / □ (the function of this layer is to passivate the front surface of the battery by utilizing the change of doping concentration, and provide good ohmic contact for the front surface electrode at the same time). in N + Deposit or grow a thin film (5) with anti-reflection effect on the layer, such as SiN or SiO 2 etc., the thickness is 70-120nm. A silicon thin film (2), such as amorphous silicon, microcrystalline silicon, or nanocrystalline silicon, is deposited on the back of the N-type single crystal silicon wafer (3), with a thickness of 20-200nm. Finally, a positive electrode (6) is prepared on the antireflection layer (5), and a negative electrode (1) is prepared on t...

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Abstract

The invention is a crystalline silicon solar battery adopting emission region on film silicon back, belonging to a new structured photovolt battery, and its key point is depositing a layer of silicon film on the back to form heterogeneous PN junction on an N-type monocrystalline silicon substrate so as to replace the homogenous PN junction on the right side of a battery, prepared by routine diffusion, where the deposited silicon film can noncrystalline, microstalline, or nanocrystalline film; the heterogenerous PN junction forming method can directly deposit a P-type silicon film on the N-type monocrystalline silicon, and can firstly deposit a layer of intrinsic silicon film on the N-type monocrystalline silicon and then deposit the P-type silicon film. Thus, the battery efficiency can reach above 20%.

Description

1. Technical field [0001] The invention relates to a new structure of a solar cell, which belongs to the field of solar energy application. 2. Background technology [0002] Crystalline silicon solar cells occupy more than 90% of the world's photovoltaic market. This kind of battery generally uses P-type crystalline silicon, which forms an N-type emitter region through high-temperature diffusion, and belongs to a homogeneous PN junction solar cell. But the disadvantage of this kind of battery is: high-temperature diffusion may cause more defects in silicon materials, and if there is pollution in the high-temperature process, the efficiency of the battery will be greatly reduced, so higher requirements are placed on materials and production environments. . In addition, the back surface of this battery has no effective passivation and no effective light-trapping structure, so the recombination of the back surface is relatively serious, and some light penetrates the active ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/072H01L31/0352H01L31/0747
CPCY02E10/50
Inventor 励旭东李海玲许颖宋爽衡扬
Owner BEIJING SOLAR ENERGY INST
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