Tungsten-antimony-tellurium (W-Sb-Te) phase change material deposition method and phase change storage unit preparation method
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A technology of phase change material and phase change storage, applied in the field of microelectronics
Active Publication Date: 2014-07-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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Embodiment 1
[0047] Such as Figure 1~Figure 4 As shown, this embodiment provides an atomic layer deposition method for a tungsten-antimony-tellurium phase change material, which at least includes the following steps:
[0048] 1) Introduce SbCl on the substrate 3 Pulse to wash unabsorbed SbCl 3 , and then introduce (R 3 Si) 2 Te pulse, cleaning unabsorbed (R 3 Si) 2 Te and reaction by-products;
[0049] 2) Introduce H to the above substrate 2 with Si 2 h 6 Mixing pulses, cleaning residual H 2 with Si 2 h 6 , and then introduce WF 6 Pulse to clean residual WF 6 and reaction by-products;
[0050] 3) Introduce SbCl to the above substrate 3 Pulse, wash residual SbCl 3 , and then introduce (R 3 Si) 3 Sb pulse, cleaning unabsorbed (R 3 Si) 3 Sb and reaction by-products;
[0051] 4) Repeat the above steps 1)~2), or steps 1)~3) to form a cycle.
[0052] It should be noted that, in view of the difficulty of deposition growth in step 2), in order to ensure the deposition growth ...
Embodiment 2
[0067] Such as Figure 5~Figure 10 As shown, the present embodiment provides a preparation method of a phase-change memory unit. The phase-change memory composed of the phase-change memory unit can be a variety of functional devices that use the principle of phase change to store data, such as using electric pulse programming Chalcogenide random access memory, or a storage disc programmed by laser pulses, or a memory programmed by electron beams, or a memory programmed by other energy particles, the preparation method of the phase change memory unit includes the following steps:
[0068] Such as Figure 5 As shown, step 1) is first performed, providing a semiconductor substrate 101 , and preparing the lower electrode 102 on the surface of the semiconductor substrate 101 . Specifically, the semiconductor substrate 101 is cleaned first, and then the lower electrode 102 is deposited on its surface, which can remove organic matter, metal ions, oxides and other impurities on the s...
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Abstract
The invention provides a tungsten-antimony-tellurium (W-Sb-Te) phase change material atomic layer deposition method and a phase change storage unit preparation method. The tungsten-antimony-tellurium (W-Sb-Te) phase change material atomic layer deposition method is as follows: 1) introducing a SbCl3 pulse to a substrate, washing away unabsorbed SbCl3, then introducing a (R3Si)2Te pulse, and washing away unabsorbed (R3Si)2Te and reaction by-products; 2) introducing a H2 and Si2H6 mixed pulse, washing away residual H2 and Si2H6, then introducing a WF6 pulse, and washing away residual WF6 and reaction by-products; 3) introducing the SbCl3 pulse, washing away residual SbCl3, then introducing a (R3Si)3Sb pulse, and washing away unabsorbed (R3Si)3Sb and reaction by-products; 4) repeating the step 1)-2) or the step 1)-3) to form a cycle period. On the basis of the preparation method, a corresponding phase change storage unit can be prepared. A tungsten-antimony-tellurium (W-Sb-Te) phase change material prepared by the method has the characteristics of accurately controllable thickness, good film compactness and strong pore-filling capability. A phase change film prepared by using the method can realize high-density storage when applied to a memorizer, and meanwhile a low power--power dissipation device can be obtained.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an atomic layer deposition method of a tungsten-antimony-tellurium phase change material and a preparation method of a phase change memory unit. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM) is an emerging semiconductor memory, which uses chalcogenide compounds as storage media, and uses electric energy (heat) to make materials in crystalline (low resistance) and amorphous (high resistance) states. The mutual conversion between them realizes the writing and erasing of information, and the reading of information is realized by measuring the change of resistance. Compared with a variety of existing semiconductor storage technologies, including conventional volatile technologies, such as static random access memory (SRAM), dynamic random access memory (DRAM), etc., and non-volatile technologies, such as ferroelectric random access ...
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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/52C23C16/30H01L45/00
Inventor 宋三年宋志棠吴良才饶峰刘波彭程张中华
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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