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A spin-orbit momentum moment magnetic memory without external magnetic field

A spin-orbit, magnetic memory technology, applied in the fields of magnetic field-controlled resistors, static memory, digital memory information, etc., can solve the problems of affecting nano-processing technology, high write current, hindering the development of miniaturization, etc. The effect of SOT efficiency, fast writing speed, and low power consumption

Active Publication Date: 2017-01-25
致真存储(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current writing of SOT-MRAM requires an external magnetic field to determine the magnetization switching polarity of its free layer, and the writing current is relatively high, which affects its nanofabrication process and hinders its continued miniaturization.

Method used

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  • A spin-orbit momentum moment magnetic memory without external magnetic field
  • A spin-orbit momentum moment magnetic memory without external magnetic field
  • A spin-orbit momentum moment magnetic memory without external magnetic field

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Embodiment Construction

[0031] The substantive features of the present invention are further described with reference to the accompanying drawings. Accompanying drawing is schematic diagram. The thicknesses of the various functional layers or regions involved are not actual dimensions, and the resistance and voltage values ​​in the working mode are also not actual values.

[0032] Detailed exemplary embodiments are disclosed herein, specific structural and functional details are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed as It is to be construed as being limited only to the exemplary embodiments set forth herein, but to cover all changes, equivalents, and alternatives falling within the scope of the invention.

[0033] The present invention proposes a novel SOT-MTJ structure in a novel spin-orbit momentum moment magnetic memory that does not require an external magnetic field. It...

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Abstract

A spin-orbit momentum moment magnetic memory that does not require an external magnetic field. The memory SOT-MTJ is based on perpendicular magnetic anisotropy. In addition to the free layer, tunneling barrier layer, reference layer and antiferromagnetic metal in the traditional MTJ structure, layer, an additional non-ferromagnetic metal layer was added, the material of the anti-ferromagnetic metal layer was optimized, and the shape of the tunnel barrier layer was improved; the SOT-MTJ structure is the bottom electrode from bottom to top, There are seven layers in total including non-ferromagnetic metal layer, ferromagnetic metal layer 1 which is the free layer, wedge tunneling barrier layer, ferromagnetic metal layer 2 which is the reference layer, antiferromagnetic metal layer and top electrode. This invention can perform writing operations without an external magnetic field, so it consumes less energy than the previous SOT-MRAM and has better scaling performance as the process node decreases.

Description

technical field [0001] The invention relates to a spin-orbit moment (Spin-Orbit Torque, SOT) magnetic memory without external magnetic field, which includes a new magnetic tunnel junction (Magnetic TunnelJunction, MTJ for short) structure based on SOT to change the resistance state of the storage device , namely SOT-MTJ, belongs to the field of non-volatile memory technology. Background technique [0002] The core storage part of traditional magnetic random access memory (MRAM for short) is the magnetic tunnel junction MTJ, which is a two-port structure device composed of multilayer films. Its core consists mainly of three thin films, with two ferromagnetic layers separated by a tunneling barrier layer. The magnetization direction of one of the ferromagnetic layers is fixed and is called the reference layer; the magnetization direction of the other ferromagnetic layer can be changed to be parallel to the reference layer (Parallel, referred to as P) or anti-parallel (Anti-Pa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/02H01L43/10G11C11/16H10N50/10H10N50/80
CPCG11C11/18G11C11/1659G11C11/161G11C11/1675G11C11/1653
Inventor 张博宇郭玮张雨赵巍胜
Owner 致真存储(北京)科技有限公司
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