Voltage-induced nano-dot magnetization uniaxial-to-vortex-state nonvolatile adjustment and control method
A voltage regulation and nano-dot technology, applied in the field of low-power nano-dot magnetization regulation, can solve problems such as being in the theoretical stage, without reliable experiments to prove the correctness, and reducing the integration density of vortex memories.
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[0038] A pair of short-circuit surface electrodes 1 with a side length c of 0.5 mm and a thickness h of 100 nm were constructed on a piezoelectric layer 2 with a [011] crystal orientation and a thickness th of 0.5 mm by electron beam evaporation and peeling off. Then, 4 (N=4) elliptical columnar magnetic nano-dots 3 with a size of 324nm × 360nm × 24nm (a × b × l) were constructed between the two short-circuit meter electrodes 1, and the long axis direction of the magnetic nano-dots 3 and The center lines OO' of the two short-circuited meter electrodes 1 are parallel. The distance d between the centers of two adjacent magnetic nano-dots 3 is 2 micrometers. The grounded bottom electrode 4 has a thickness m of 200 nm.
[0039] Firstly, a magnetic field of ~0.2T is applied along the long axis direction of the magnetic nano-dots 3 (ie, the OO' direction), to initialize the magnetization states of all the magnetic nano-dots 3 to a uniaxial state. After that, a voltage of U=-200V i...
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