Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Voltage-induced nano-dot magnetization uniaxial-to-vortex-state nonvolatile adjustment and control method

A voltage regulation and nano-dot technology, applied in the field of low-power nano-dot magnetization regulation, can solve problems such as being in the theoretical stage, without reliable experiments to prove the correctness, and reducing the integration density of vortex memories.

Active Publication Date: 2021-04-27
NAT UNIV OF DEFENSE TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a strong current to pass through the wire to generate a strong magnetic field, which will cause a large energy consumption
2016 "Acoustic-Wave-Induced Magnetization Switching of Magnetostrictive Nanomagnets from Single-Domain to Nonvolatile Vortex States" (Nano Lett., 16(9) , 5681-5687), Sampath et al. used the stress generated by acoustic waves to successfully realize the uniaxial to vortex state regulation of hundreds of nanometer-scale Co nanodots. However, the electrodes required to generate acoustic waves will waste a large area and reduce the integration of vortex memories. density
However, since the uniaxial to vortex control devices of magnetic nanodots are at the micro-nano level, complex effects are involved in the process of device preparation and control, so there are still no reliable experimental results.
[0006] Therefore, the current nanodot magnetization uniaxial-vortex control method either requires excessive energy consumption, or wastes an excessively large unit memory area, making it difficult to integrate, which cannot meet the needs of the new generation of magnetic storage and computing circuits.
Although Bhattacharya's research provides theoretical support for the voltage regulation of the magnetization state switching of nanodots from uniaxial to vortex state, and provides a low energy consumption control idea, but this idea is still in the theoretical stage, and there is no reliable experiment to prove this idea so far. There is no public report on the specific scheme of using stress to regulate the magnetization state

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage-induced nano-dot magnetization uniaxial-to-vortex-state nonvolatile adjustment and control method
  • Voltage-induced nano-dot magnetization uniaxial-to-vortex-state nonvolatile adjustment and control method
  • Voltage-induced nano-dot magnetization uniaxial-to-vortex-state nonvolatile adjustment and control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A pair of short-circuit surface electrodes 1 with a side length c of 0.5 mm and a thickness h of 100 nm were constructed on a piezoelectric layer 2 with a [011] crystal orientation and a thickness th of 0.5 mm by electron beam evaporation and peeling off. Then, 4 (N=4) elliptical columnar magnetic nano-dots 3 with a size of 324nm × 360nm × 24nm (a × b × l) were constructed between the two short-circuit meter electrodes 1, and the long axis direction of the magnetic nano-dots 3 and The center lines OO' of the two short-circuited meter electrodes 1 are parallel. The distance d between the centers of two adjacent magnetic nano-dots 3 is 2 micrometers. The grounded bottom electrode 4 has a thickness m of 200 nm.

[0039] Firstly, a magnetic field of ~0.2T is applied along the long axis direction of the magnetic nano-dots 3 (ie, the OO' direction), to initialize the magnetization states of all the magnetic nano-dots 3 to a uniaxial state. After that, a voltage of U=-200V i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a voltage-induced nano-dot magnetization uniaxial-to-vortex-state nonvolatile adjustment and control method, and aims to solve the problem of high energy consumption in conversion from an electrically-driven low-energy-consumption nano-dot uniaxial state to a vortex state. According to the technical scheme, the non-volatile nano-dot magnetization uniaxial vortex voltage adjustment and control system is composed of a piezoelectric layer, a bottom electrode, N magnetic nano-dots and two short-circuit meter electrodes, elliptical magnetic nano-dots isolated from each other on the piezoelectric layer are constructed between the two short-circuit meter electrodes, and the long-axis direction is parallel to the connecting lines of the two short-circuit meter electrodes. After the magnetization state of the magnetic nanodots is initialized to a uniaxial state by applying a magnetic field, voltage is applied between the short-circuit surface electrode and the bottom electrode to generate stress, so that the magnetic nanodots are converted into a vortex state from the uniaxial state. By the adoption of the method, stable voltage adjustment and control from the magnetization uniaxial state to the vortex state of the magnetic nanodots are successfully achieved, and the problem of high energy consumption in conversion from the uniaxial state to the vortex state of the electrically-driven low-energy-consumption nanodots is solved.

Description

technical field [0001] The invention relates to a low-power consumption nano-dot magnetization regulation method, in particular to a voltage-induced nano-dot magnetization regulation method from a uniaxial state to a vortex state. Background technique [0002] In ferromagnetic materials and nanostructures, the magnetic vortex state is considered to be an ideal basic cell for spintronic logic devices and low-energy magnetic random access memory due to its stable and nonvolatile magnetic logic characteristic configuration at room temperature. A vortex state usually has four characteristic configurations, including vortex chirality (clockwise or counterclockwise) and out-of-plane magnetization direction (up or down), which are easy to encode logic. Since the vortex state of the disk at room temperature is naturally non-volatile and has no internal energy consumption, the main problems to be solved in the logic and storage applications of the magnetic vortex state in the field o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/16G11C5/14
CPCG11C11/161G11C11/1697G11C5/147
Inventor 刘嘉豪方粮李成许诺杨彬彬朱传超漆学雷
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products