36 results about "Magnetic vortex" patented technology

A magnetic gradiometer can be used in systems or methods for nondestructive testing, even when the material being tested is weakly magnetic. The magnetic gradiometer can include a printed circuit board (PCB) comprising a first end and a second end separated by a base length; an excitation coil encircling at least a portion of the PCB and configured to deliver an alternating current (AC) to generate an excitation magnetic field; and a differential sensor. The differential sensor can include a reference magnetic tunneling junction in magnetic vortex state (vortex MTJ) sensor array at the first end to generate a voltage based on the excitation magnetic field; and a signal vortex MTJ sensor array at the second end to generate another voltage based on the excitation magnetic field due to a composition of the measurement target. The second end of the PCB can be oriented towards the measurement target.

The present invention belongs to the technical field of magnetic materials, and particularly relates to a high-frequency magnetic composite material, a high-frequency magnetic device and a processing method thereof. Among them, the processing method of the high-frequency magnetic composite material includes: mixing magnetic metal particles with a magnetic vortex structure, a solvent and a non-magnetic ceramic phase material and grinding them into a slurry; placing the slurry in a mold and forming it under a low-temperature and low-pressure process; wherein, the conditions of the low-temperature and low-pressure process are that the temperature is lower than 300 °C and the pressure is less than 500 MPa. By using magnetic particles with a magnetic vortex structure, there are no magnetic domain walls in the present invention. At high frequencies, magnetization mainly occurs through magnetization rotation, rather than the traditional domain wall displacement mechanism, which can significantly increase the working frequency of the material to above 100 MHz; in addition, the low-temperature and low-pressure process is adopted to avoid various defects of extreme conditions such as high temperature and high pressure in the traditional process.

Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.

The utility model provides a magnet, a rotor with the magnet and a motor with the rotor. The magnet comprises a main body, the main body is provided with a first surface and a second surface which are opposite, and a notch formed in at least one of the first surface and the second surface of the main body, the depth direction of the notch is perpendicular to at least one of the first surface and the second surface, and the magnet is in a cuboid shape. And the notch does not penetrate through the main body in the depth direction of the notch or penetrates through the main body in the depth direction of the notch. By adopting the technical scheme of the utility model, the stress concentration points of the magnet can be increased, the stress of the magnet can be dispersed, and the physical performance of the magnet can be improved while the magnetic loss of the magnet is reduced and the eddy-current loss of the magnet is reduced.

The utility model provides dosing equipment. The dosing equipment comprises a dosing device and a flow adjusting assembly, the dosing device comprises a magnetic vortex pump, a first pipeline and a second pipeline, one end of the first pipeline is communicated with a liquid inlet of the magnetic vortex pump, one end of the second pipeline is communicated with a liquid outlet of the magnetic vortex pump, and the other end of the second pipeline is communicated with the flotation equipment; the flow adjusting assembly comprises a flow adjusting part and a third pipeline, one end of the third pipeline is communicated with a liquid outlet of the magnetic vortex pump, the other end of the third pipeline is communicated with the first pipeline, the flow adjusting part is arranged on the second pipeline, and the third pipeline is arranged between the liquid outlet of the magnetic vortex pump and the flow adjusting part. According to the chemical adding equipment, the change range of the chemical adding amount can be expanded.

This invention discloses a wind-magnetic-vortex combined separation method and system for alloys in 300 series stainless steel slag. Addressing the characteristics of 300 series slag being easily pulverized and Cr-Ni alloys exhibiting "weak magnetic high density," the method includes: S1, crushing the slag material by roller pressing and multi-stage screening to separate it into coarse, medium, and fine particle sizes, with simultaneous negative pressure dust collection; S2, after the fine particle size is dispersed and its surface powder is removed by a 0.3-0.5MPa high-pressure airflow, each particle size is pre-enriched by wind separation at a matched wind speed; S3, the pre-enriched material is placed in a 1500-3000Gs weak magnetic field for impurity removal, precisely eliminating strong magnetic impurities while retaining weak magnetic alloys; S4, the enriched material is fed into an alternating eddy current field according to particle size, and finely separated by eddy current at a low speed of 60-150r / min. This invention effectively overcomes the defects of powder encapsulation, accidental damage from conventional strong magnetic separation, and abnormal adsorption in high-speed eddy current separation, significantly improving the recovery rate and purity of Cr-Ni alloys, and achieving clean dry resource recovery.

An MR element comprises: a magnetization-fixed layer in which one direction of magnetization is defined; a free layer arranged to contain a magnetic vortex structure and configured so that a center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer arranged between the magnetization-fixed layer and the free layer. The magnetization-fixed layer comprises a first region and a second region in which the magnetization directions of the magnetization-fixed layer are less aligned than in the first region.The free layer is arranged such that an area of ​​an overlapping part, in which the free layer and the first area overlap when considering the magnetization-fixed layer, the gap layer and the free layer in the stacking direction, is larger than an area of ​​an overlapping part, in which the free layer and the second area overlap when considered in the stacking direction.

The invention discloses an AMR sensor and method for detecting a Z-direction magnetic field, and mainly solves the technical problems that an existing AMR sensor for detecting the Z-direction magnetic field is complex in structure and high in preparation cost. The magnetization state of the magnetic layer is a magnetic vortex state when no external magnetic field exists, and the two conductive layers are used for correspondingly applying current to the magnetic layer. The current comprises a component along the thickness direction of the magnetic layer. The AMR sensor is provided with the magnetic layer and the conductive layers arranged on the upper side and the lower side of the magnetic layer, compared with a traditional ARM sensor, no extra magnetic conductive material needs to be arranged for magnetic field conversion when Z-direction magnetic field measurement is carried out, the detection precision can be improved, the overall structure is simple, and the preparation cost is low.

The present invention relates to a magnetic sensor device with a substrate (10) having a substrate surface (10a), at least one first measuring bridge (12a) each with first magnetoresistive elements (14a), by means of which a first measured quantity with respect to a first magnetic field strength can be determined in a first sensing direction running parallel to the substrate surface (10a), which is parallel to a respective first magnetization direction of the reference positions (18) of the first magnetoresistive elements (14a), and at least one soft magnetic shielding element (26a, 26b), wherein at least one of the first magnetoresistive elements (14a) has a magnetic vortex (28) in its free position (16) or, in the case of at least one of the first magnetoresistive elements (14a), its free position (16) is located between a first hard magnetic area and a second hard magnetic area.The present invention also relates to a manufacturing method for a magnetic sensor device.

The invention provides an electromagnetic vortex wave generation method, which comprises the following steps: S1, calculating a target electromagnetic vortex wave main lobe pointing angle and an emission mode number range according to a given amplitude weighted concentric circular ring array structure; s2, obtaining an excitation amplitude calculation formula according to an orthogonal decomposition algorithm, and calculating excitation amplitudes corresponding to different emission mode numbers obtained in the step S1 under a target electromagnetic vortex wave main lobe pointing angle based on the excitation amplitude calculation formula; and S3, performing simulation verification calculation to obtain a transmitting modal number l and a corresponding excitation amplitude Am, performing accounting on the ratio of main lobe pointing to peak side lobe of the electromagnetic vortex wave, and performing screening to obtain amplitude weighted concentric annular array electromagnetic vortex wave transmitting parameters with low side lobe and high pointing precision. According to the method, the electromagnetic vortex wave which generates the low side lobe and is pointed by the given beam is derived and calculated by using the orthogonal decomposition theory, and compared with a search-based heuristic algorithm, the method has higher universality and real-time performance, and can widely and efficiently adapt to different scene requirements.

Methods and apparatus for devices including TMR elements with a free layer having a vortex layer to provide a magnetic vortex, a spacer layer, a reference layer, and a bias layer to offset the vortex by magnetic exchange bias. Sensor embodiments increase linearity for enhancing sensor performance.

An MR element includes: a magnetized fixed layer; a free layer configured to have a magnetic vortex structure in which the center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer disposed between the magnetized fixed layer and the free layer. The free layer has: a lower surface located at one end in the stacking direction of the magnetized fixed layer, the gap layer, and the free layer; an upper surface located at the other end in the stacking direction; and a side surface connecting the lower surface and the upper surface. The side surface includes an inclined portion inclined relative to the stacking direction.

To provide a magnetic sensor device capable of detecting both direction and intensity of a target magnetic field with a simple configuration.SOLUTION: A magnetic sensor device 2 comprises a magnetic sensor 1 and a processor 40. Each of first to third detection circuits 10a-10c of the magnetic sensor 1 includes MR elements 11, 12. Each of a plurality of laminate films 50 composing the MR elements 11, 12 includes a free layer 53c having a magnetic vortex structure and configured to move a centre 53c of the magnetic vortex structure according to a target magnetic field MF. The first to third detection circuits 10a-10c generate first to third detection signals S1-S3 which periodically change according to periodic change in a direction of the target magnetic field MF and the amplitude of which changes according to change in intensity of the target magnetic field MF. The processor 40 generates an angle detection value θs and an intensity detection value Va based on the first to third detection signals S1-S3.SELECTED DRAWING: Figure 4

A magnetic sensor comprises a plurality of first MR elements and a plurality of second MR elements. Each of the plurality of first MR elements and the plurality of second MR elements has a resistance change characteristic, where a resistance value changes according to a stable state of a magnetic vortex structure under the same strength of an applied magnetic field. A statistical distribution of the resistance change magnitude of the plurality of first MR elements forms a first distribution centered around a first value. A statistical distribution of the resistance change magnitude of the plurality of second MR elements forms a second distribution centered around a second value.A group that includes the majority of first MR elements and the majority of second MR elements has a property where a statistical distribution of a resistance change amount forms a third distribution centered around a third value between the first value and the second value.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex chirality regulation, which comprises a plurality of ferromagnetic nano-disks and five bias nano-magnets, the ferromagnetic nano-disks are tangent or intersected to form an intercommunication nano-structure, the five bias nano-magnets are used for regulating the hand shape of a magnetic vortex, and the magnetic vortex chirality regulation is realized through the magnetic vortex chirality regulation. The ferromagnetic nano-disk and the bias nano-magnet are made of the same material which is a soft magnetic material containing Fe, Co and Ni elements. Nanostructures such as a ferromagnetic nanodisk array and a bias magnet are innovatively adopted, a binary logic gate device with deterministic magnetic vortex chirality is constructed, and the key scientific problem of chirality randomness in a traditional magnetic vortex device is solved by accurately regulating and controlling the chirality state of magnetic vortex, so that the magnetic vortex chirality of the magnetic vortex device is improved. An important theoretical support and an experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption, and the method has important scientific significance and application value for promoting the development of spintronics devices.

The invention discloses a linear AMR sensor for Z-direction magnetic field detection. The technical problems that an AMR sensor cannot distinguish the Z-direction magnetic field direction and is poor in linearity are mainly solved. The ferromagnetic layer is in a magnetic vortex state without external magnetic field interference, and the conducting layers are correspondingly arranged on the two sides of the ferromagnetic layer. The conductive layer comprises a conductive column arranged in the center of any side of the ferromagnetic layer and at least one conductive ring which is concentric with the conductive column and is sequentially arranged on the two sides of the ferromagnetic layer in a staggered mode. According to the Z-direction magnetic field detection linear AMR sensor, the conductive columns and the corresponding guide rings are concentrically arranged on the two sides of the ferromagnetic layer, so that the direction of current in the ferromagnetic layer can be changed, the sensor works in a linear area, the linear characteristic of sensor output is achieved, and the detection precision is improved. And meanwhile, the sensor shows different resistance values when the external Z-direction magnetic field intensity is the same and the directions are different, so that effective distinguishing of the Z-direction magnetic field directions is realized.

An MR element includes a magnetization pinned layer, a free layer configured to be able to have a magnetic vortex structure and so that a center of the magnetic vortex structure can move in accordance with a target magnetic field, and a gap layer arranged between the magnetization pinned layer and the free layer. The free layer includes a lower surface located at one end in a stacking direction of the magnetization pinned layer, the gap layer and the free layer, an upper surface located at the other end in the stacking direction, and a side surface connecting the lower surface and the upper surface. A side surface includes an inclined portion inclined relative to the stacking direction.

A magnetoresistive device includes at least one magnetoresistive element and at least one electrode including at least one connection portion connected to the at least one magnetoresistive element. The at least one magnetoresistive element includes a magnetization pinned layer, a free layer configured to have a magnetic vortex structure and configured so that a center of the magnetic vortex structure moves depending on a target magnetic field, and a gap layer. The magnetization pinned layer, the free layer, and the gap layer are stacked in a certain stacking direction. The at least one connection portion has a contact surface being in contact with the at least one magnetoresistive element and having an identical shape to that of the free layer when seen in the stacking direction, and a circumferential surface connected to the contact surface and having a certain dimension in the stacking direction.

The invention relates to a magnetic sensor device comprising a substrate (10) having a substrate surface (10a); at least one first measuring bridge (12a), each first measuring bridge having first magnetoresistive elements (14a) by means of which a first measurement variable relating to a first magnetic field strength in a first sensing direction running parallel to the substrate surface (10a) can be determined, the first sensing direction being parallel to a respective first magnetization direction of the reference layers (18) of the first magnetoresistive elements (14a); and at least one soft-magnetic shielding element (26a, 26b). At least one of the first magnetoresistive elements (14a) has a magnetic vortex (28) in the free layer (16) thereof or at least one of the first magnetoresistive elements (14a) has a free layer (16) which lies, in each case, between a first hard-magnetic region and a second hard-magnetic region. The invention likewise relates to a method for producing a magnetic sensor device.

This suppresses variations in properties caused by the direction of magnetization in the free layer. [Solution] The magnetic sensor 1 comprises a plurality of first MR elements 50A and a plurality of second MR elements 50B. Each of the plurality of first MR elements 50A and the plurality of second MR elements 50B has a resistance change characteristic in which the resistance value changes when the strength of the applied magnetic field is the same, depending on the stable state of the magnetic vortex structure. The statistical distribution of the resistance change amount ΔR of the plurality of first MR elements 50A is a first distribution 81 centered on a first value ΔR1. The statistical distribution of the resistance change amount ΔR of the plurality of second MR elements 50B is a second distribution 82 centered on a second value ΔR2. The group including the plurality of first MR elements 50A and the plurality of second MR elements 50B has the characteristic that the statistical distribution of the resistance change amount ΔR is a third distribution centered on a third value between the first value ΔR1 and the second value ΔR2.

A magnetic sensor system includes a magnetoresistive sensor comprising a magnetic free layer having a sensing plane and a magnetically-free magnetization arranged within the sensing plane, where the magnetically-free magnetization is variable in a presence of an in-plane magnetic field that is aligned with the sensing plane; and a ferromagnetic disc having a magnetic vortex in a ground state, wherein the magnetic vortex is configured to react to an out-of-plane magnetic field and generate a stray field in response to the out-of-plane magnetic field being applied to the ferromagnetic disc. The stray field has an in-plane magnetic field component that is proportional to the out-of-plane magnetic field. The magnetic free layer is configured to receive the in-plane magnetic field component of the stray field. The magnetically-free magnetization is configured to change based on the in-plane magnetic field component of the stray field.

The invention discloses an alarm system and method connected with an intelligent housekeeper. The method comprises the following steps: S1, collecting data in a family environment through a plurality of sensors; s2, preprocessing the collected data at an edge computing node; s3, transmitting the preprocessed data to a cloud computing platform, and storing and processing the data by adopting a magnetic vortex computing technology; s4, analyzing the processed data based on a quantum state evolution neural network, and identifying abnormal behaviors and potential threats; s5, sensing the emotional state of the user through a brain-computer interface technology, and adjusting the alarm intensity and the response strategy through a brain wave synchronization technology; s6, encrypting the data by adopting a quantum multiple hash technology; and S7, performing real-time monitoring on the household equipment in combination with an ultrafast electron beam imaging technology, and capturing microstructure changes and potential faults in the equipment. The invention provides an efficient and safe intelligent housekeeper alarm system by combining quantum computing and neural network technologies.

The invention discloses a flow synthesis device and method for continuously synthesizing inorganic nanoparticles through magnetic vortex energy transfer. The continuous flow synthesis device comprises a nano-particle generator, a product cooler, a back pressure valve and a product collector which are sequentially connected through a reaction liquid conveying system, and a controller for monitoring the reaction liquid conveying system and the nano-particle generator. In the nano-particle generator of the continuous flow device, the reaction liquid in the pipeline is rapidly heated by utilizing a magnetic vortex energy transfer mechanism, so that the inorganic nano-particles are generated. Due to accurate temperature and pressure control, the obtained nano-particles are high in crystallinity and narrow in particle size distribution; benefited from the automation of the preparation process, the preparation repeatability of the nano-particle product is good, and the difference between batches is small. The magnetic vortex continuous flow synthesis system is combined with the flow preparation method, so that the method is suitable for macroscopic preparation of nanoparticles.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex polarity regulation and control, a plurality of ferromagnetic nanodisks are arranged above a ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt, and magnetostatic coupling exists between the ferromagnetic nanodisks and the coupling nanobelt; the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt is vertically crossed and communicated with the bias nano-magnet, the bias nano-magnet directly faces the Pt electrode on one side, the three Pt electrodes are connected with a Pt layer in the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt film structure, the width of the Pt electrodes is equal to the width of the coupling nanobelt, the length of the Pt electrodes is smaller than micron, and the thickness of the coupling nanobelt is smaller than that of the bias nano-magnet. A pair of magnetic tunnel junction electrodes is arranged above the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelts and arranged left and right, and the magnetic tunnel junction electrodes are vertically connected with the coupling nanobelts, so that important theoretical support and experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption; and the method has important scientific significance and application value for promoting the development of spintronics devices.

Methods and apparatus for a device having a TMR element that includes a free layer, a spacer layer, and a reference layer. In embodiments, the free layer comprises a vortex layer configured to provide a magnetic vortex, and a coupling layer magnetically coupled to the vortex layer to modulate the vortex in the vortex layer.

The magnetic sensor includes a plurality of first MR elements and a plurality of second MR elements. Each of the plurality of first MR elements and the plurality of second MR elements has a resistance value change characteristic in which the resistance value changes in accordance with the steady state of the magnetic vortex structure when the intensity of the applied magnetic field is the same. The statistical distribution of the amount of change in resistance of the plurality of first MR elements becomes a first distribution centered on the first value. The statistical distribution of the amount of change in resistance of the plurality of second MR elements becomes a second distribution centered on the second value. A group including the plurality of first MR elements and the plurality of second MR elements has a characteristic in which a statistical distribution of the amount of change in resistance becomes a third distribution centered on a third value between the first value and the second value.

A magnetic sensor system includes a magnetoresistive sensor comprising a magnetic free layer having a sensing plane and a magnetically-free magnetization arranged within the sensing plane, where the magnetically-free magnetization is variable in a presence of an in-plane magnetic field that is aligned with the sensing plane; and a ferromagnetic disc having a magnetic vortex in a ground state, wherein the magnetic vortex is configured to react to an out-of-plane magnetic field and generate a stray field in response to the out-of-plane magnetic field being applied to the ferromagnetic disc. The stray field has an in-plane magnetic field component that is proportional to the out-of-plane magnetic field. The magnetic free layer is configured to receive the in-plane magnetic field component of the stray field. The magnetically-free magnetization is configured to change based on the in-plane magnetic field component of the stray field.

A magnetic sensor system comprises a magnetoresistive sensor, which includes a magnetic-free layer with a sensing plane and a magnetic-free magnetization arranged within the sensing plane, wherein the magnetic-free magnetization is variable in the presence of a magnetic field in the plane aligned with the sensing plane; and a ferromagnetic disk with a magnetic vortex in a ground state, wherein the magnetic vortex is configured to respond to an out-of-plane magnetic field and, in response to the out-of-plane magnetic field being applied to the ferromagnetic disk, to generate a stray field. The stray field has an in-plane magnetic field component proportional to the out-of-plane magnetic field. The magnetic-free layer is configured to receive the in-plane magnetic field component of the stray field.The magnetic-free magnetization is designed to change based on the in-plane magnetic field component of the stray field.

A magnetic gradiometer can be used in systems or methods for nondestructive testing, even when the material being tested is weakly magnetic. The magnetic gradiometer can include a printed circuit board (PCB) comprising a first end and a second end separated by a base length; an excitation coil encircling at least a portion of the PCB and configured to deliver an alternating current (AC) to generate an excitation magnetic field; and a differential sensor. The differential sensor can include a reference magnetic tunneling junction in magnetic vortex state (vortex MTJ) sensor array at the first end to generate a voltage based on the excitation magnetic field; and a signal vortex MTJ sensor array at the second end to generate another voltage based on the excitation magnetic field due to a composition of the measurement target. The second end of the PCB can be oriented towards the measurement target.

The utility model relates to a long-service-life magnetic peripheral pump which comprises a pump cover and a pump body, and a pump cavity is defined by the pump cover and the pump body. An isolation cavity is defined by the isolation sleeve and the side, away from the pump cover, of the pump body; the pump shaft penetrates through the pump cavity and the isolation cavity; the impeller is located in the pump cavity and arranged at one end of the pump shaft, the impeller is of a symmetrical structure, and a balance hole and a water ring groove are formed in the impeller; the inner rotor assembly is located in the isolation cavity and arranged on the pump shaft in a sleeving mode; and the outer rotor assembly is positioned outside the isolation cavity and is opposite to the inner rotor assembly. The axial force balance effect of the magnetic peripheral pump is good, the impeller is symmetrically designed and is provided with the balance hole and the water ring groove, the impeller is positioned on the pump shaft through the jackscrew, the impeller can freely float and balance in the pump cavity, friction does not exist between the impeller and the pump body and between the impeller and the pump cover, meanwhile, axial friction between the sliding bearing and the thrust ring is reduced, and the service life of the pump is prolonged. Operation is more stable, and the service life is longer.