15 results about "Magnetic vortex" patented technology

This invention discloses a wind-magnetic-vortex combined separation method and system for alloys in 300 series stainless steel slag. Addressing the characteristics of 300 series slag being easily pulverized and Cr-Ni alloys exhibiting "weak magnetic high density," the method includes: S1, crushing the slag material by roller pressing and multi-stage screening to separate it into coarse, medium, and fine particle sizes, with simultaneous negative pressure dust collection; S2, after the fine particle size is dispersed and its surface powder is removed by a 0.3-0.5MPa high-pressure airflow, each particle size is pre-enriched by wind separation at a matched wind speed; S3, the pre-enriched material is placed in a 1500-3000Gs weak magnetic field for impurity removal, precisely eliminating strong magnetic impurities while retaining weak magnetic alloys; S4, the enriched material is fed into an alternating eddy current field according to particle size, and finely separated by eddy current at a low speed of 60-150r / min. This invention effectively overcomes the defects of powder encapsulation, accidental damage from conventional strong magnetic separation, and abnormal adsorption in high-speed eddy current separation, significantly improving the recovery rate and purity of Cr-Ni alloys, and achieving clean dry resource recovery.

An MR element comprises: a magnetization-fixed layer in which one direction of magnetization is defined; a free layer arranged to contain a magnetic vortex structure and configured so that a center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer arranged between the magnetization-fixed layer and the free layer. The magnetization-fixed layer comprises a first region and a second region in which the magnetization directions of the magnetization-fixed layer are less aligned than in the first region.The free layer is arranged such that an area of ​​an overlapping part, in which the free layer and the first area overlap when considering the magnetization-fixed layer, the gap layer and the free layer in the stacking direction, is larger than an area of ​​an overlapping part, in which the free layer and the second area overlap when considered in the stacking direction.

The invention discloses an AMR sensor and method for detecting a Z-direction magnetic field, and mainly solves the technical problems that an existing AMR sensor for detecting the Z-direction magnetic field is complex in structure and high in preparation cost. The magnetization state of the magnetic layer is a magnetic vortex state when no external magnetic field exists, and the two conductive layers are used for correspondingly applying current to the magnetic layer. The current comprises a component along the thickness direction of the magnetic layer. The AMR sensor is provided with the magnetic layer and the conductive layers arranged on the upper side and the lower side of the magnetic layer, compared with a traditional ARM sensor, no extra magnetic conductive material needs to be arranged for magnetic field conversion when Z-direction magnetic field measurement is carried out, the detection precision can be improved, the overall structure is simple, and the preparation cost is low.

The present invention relates to a magnetic sensor device with a substrate (10) having a substrate surface (10a), at least one first measuring bridge (12a) each with first magnetoresistive elements (14a), by means of which a first measured quantity with respect to a first magnetic field strength can be determined in a first sensing direction running parallel to the substrate surface (10a), which is parallel to a respective first magnetization direction of the reference positions (18) of the first magnetoresistive elements (14a), and at least one soft magnetic shielding element (26a, 26b), wherein at least one of the first magnetoresistive elements (14a) has a magnetic vortex (28) in its free position (16) or, in the case of at least one of the first magnetoresistive elements (14a), its free position (16) is located between a first hard magnetic area and a second hard magnetic area.The present invention also relates to a manufacturing method for a magnetic sensor device.

An MR element includes: a magnetized fixed layer; a free layer configured to have a magnetic vortex structure in which the center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer disposed between the magnetized fixed layer and the free layer. The free layer has: a lower surface located at one end in the stacking direction of the magnetized fixed layer, the gap layer, and the free layer; an upper surface located at the other end in the stacking direction; and a side surface connecting the lower surface and the upper surface. The side surface includes an inclined portion inclined relative to the stacking direction.

A magnetic sensor comprises a plurality of first MR elements and a plurality of second MR elements. Each of the plurality of first MR elements and the plurality of second MR elements has a resistance change characteristic, where a resistance value changes according to a stable state of a magnetic vortex structure under the same strength of an applied magnetic field. A statistical distribution of the resistance change magnitude of the plurality of first MR elements forms a first distribution centered around a first value. A statistical distribution of the resistance change magnitude of the plurality of second MR elements forms a second distribution centered around a second value.A group that includes the majority of first MR elements and the majority of second MR elements has a property where a statistical distribution of a resistance change amount forms a third distribution centered around a third value between the first value and the second value.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex chirality regulation, which comprises a plurality of ferromagnetic nano-disks and five bias nano-magnets, the ferromagnetic nano-disks are tangent or intersected to form an intercommunication nano-structure, the five bias nano-magnets are used for regulating the hand shape of a magnetic vortex, and the magnetic vortex chirality regulation is realized through the magnetic vortex chirality regulation. The ferromagnetic nano-disk and the bias nano-magnet are made of the same material which is a soft magnetic material containing Fe, Co and Ni elements. Nanostructures such as a ferromagnetic nanodisk array and a bias magnet are innovatively adopted, a binary logic gate device with deterministic magnetic vortex chirality is constructed, and the key scientific problem of chirality randomness in a traditional magnetic vortex device is solved by accurately regulating and controlling the chirality state of magnetic vortex, so that the magnetic vortex chirality of the magnetic vortex device is improved. An important theoretical support and an experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption, and the method has important scientific significance and application value for promoting the development of spintronics devices.

The invention discloses a linear AMR sensor for Z-direction magnetic field detection. The technical problems that an AMR sensor cannot distinguish the Z-direction magnetic field direction and is poor in linearity are mainly solved. The ferromagnetic layer is in a magnetic vortex state without external magnetic field interference, and the conducting layers are correspondingly arranged on the two sides of the ferromagnetic layer. The conductive layer comprises a conductive column arranged in the center of any side of the ferromagnetic layer and at least one conductive ring which is concentric with the conductive column and is sequentially arranged on the two sides of the ferromagnetic layer in a staggered mode. According to the Z-direction magnetic field detection linear AMR sensor, the conductive columns and the corresponding guide rings are concentrically arranged on the two sides of the ferromagnetic layer, so that the direction of current in the ferromagnetic layer can be changed, the sensor works in a linear area, the linear characteristic of sensor output is achieved, and the detection precision is improved. And meanwhile, the sensor shows different resistance values when the external Z-direction magnetic field intensity is the same and the directions are different, so that effective distinguishing of the Z-direction magnetic field directions is realized.

An MR element includes a magnetization pinned layer, a free layer configured to be able to have a magnetic vortex structure and so that a center of the magnetic vortex structure can move in accordance with a target magnetic field, and a gap layer arranged between the magnetization pinned layer and the free layer. The free layer includes a lower surface located at one end in a stacking direction of the magnetization pinned layer, the gap layer and the free layer, an upper surface located at the other end in the stacking direction, and a side surface connecting the lower surface and the upper surface. A side surface includes an inclined portion inclined relative to the stacking direction.

The invention relates to a magnetic sensor device comprising a substrate (10) having a substrate surface (10a); at least one first measuring bridge (12a), each first measuring bridge having first magnetoresistive elements (14a) by means of which a first measurement variable relating to a first magnetic field strength in a first sensing direction running parallel to the substrate surface (10a) can be determined, the first sensing direction being parallel to a respective first magnetization direction of the reference layers (18) of the first magnetoresistive elements (14a); and at least one soft-magnetic shielding element (26a, 26b). At least one of the first magnetoresistive elements (14a) has a magnetic vortex (28) in the free layer (16) thereof or at least one of the first magnetoresistive elements (14a) has a free layer (16) which lies, in each case, between a first hard-magnetic region and a second hard-magnetic region. The invention likewise relates to a method for producing a magnetic sensor device.

This suppresses variations in properties caused by the direction of magnetization in the free layer. [Solution] The magnetic sensor 1 comprises a plurality of first MR elements 50A and a plurality of second MR elements 50B. Each of the plurality of first MR elements 50A and the plurality of second MR elements 50B has a resistance change characteristic in which the resistance value changes when the strength of the applied magnetic field is the same, depending on the stable state of the magnetic vortex structure. The statistical distribution of the resistance change amount ΔR of the plurality of first MR elements 50A is a first distribution 81 centered on a first value ΔR1. The statistical distribution of the resistance change amount ΔR of the plurality of second MR elements 50B is a second distribution 82 centered on a second value ΔR2. The group including the plurality of first MR elements 50A and the plurality of second MR elements 50B has the characteristic that the statistical distribution of the resistance change amount ΔR is a third distribution centered on a third value between the first value ΔR1 and the second value ΔR2.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex polarity regulation and control, a plurality of ferromagnetic nanodisks are arranged above a ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt, and magnetostatic coupling exists between the ferromagnetic nanodisks and the coupling nanobelt; the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt is vertically crossed and communicated with the bias nano-magnet, the bias nano-magnet directly faces the Pt electrode on one side, the three Pt electrodes are connected with a Pt layer in the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt film structure, the width of the Pt electrodes is equal to the width of the coupling nanobelt, the length of the Pt electrodes is smaller than micron, and the thickness of the coupling nanobelt is smaller than that of the bias nano-magnet. A pair of magnetic tunnel junction electrodes is arranged above the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelts and arranged left and right, and the magnetic tunnel junction electrodes are vertically connected with the coupling nanobelts, so that important theoretical support and experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption; and the method has important scientific significance and application value for promoting the development of spintronics devices.

The magnetic sensor includes a plurality of first MR elements and a plurality of second MR elements. Each of the plurality of first MR elements and the plurality of second MR elements has a resistance value change characteristic in which the resistance value changes in accordance with the steady state of the magnetic vortex structure when the intensity of the applied magnetic field is the same. The statistical distribution of the amount of change in resistance of the plurality of first MR elements becomes a first distribution centered on the first value. The statistical distribution of the amount of change in resistance of the plurality of second MR elements becomes a second distribution centered on the second value. A group including the plurality of first MR elements and the plurality of second MR elements has a characteristic in which a statistical distribution of the amount of change in resistance becomes a third distribution centered on a third value between the first value and the second value.

A magnetic gradiometer can be used in systems or methods for nondestructive testing, even when the material being tested is weakly magnetic. The magnetic gradiometer can include a printed circuit board (PCB) comprising a first end and a second end separated by a base length; an excitation coil encircling at least a portion of the PCB and configured to deliver an alternating current (AC) to generate an excitation magnetic field; and a differential sensor. The differential sensor can include a reference magnetic tunneling junction in magnetic vortex state (vortex MTJ) sensor array at the first end to generate a voltage based on the excitation magnetic field; and a signal vortex MTJ sensor array at the second end to generate another voltage based on the excitation magnetic field due to a composition of the measurement target. The second end of the PCB can be oriented towards the measurement target.

The invention discloses an intelligent diagnosis and health prediction method for an operation fault of substation auxiliary equipment, and relates to the technical field of fault diagnosis, and the method comprises the following steps: building a high-resolution magnetic flux dynamic collection mechanism in the operation process of the substation auxiliary equipment, collecting magnetic flux density distribution data at the moment of load abrupt change at microsecond-level time granularity, and carrying out the fault diagnosis of the substation auxiliary equipment; forming a continuous magnetic flux time sequence data sequence covering the space area of the target equipment; based on the magnetic flux time sequence data sequence, constructing a magnetic flux space-time gradient mapping model, performing dynamic analysis on a magnetic flux density change rate and a direction difference, identifying a magnetic flux concentration region and a reverse circulation region, and generating a corresponding magnetic vortex distribution diagram; through high-resolution magnetic flux dynamic acquisition and space-time gradient mapping, accurate identification and active correction of transient magnetic flux disturbance are realized, a self-adaptive threshold adjustment chain and a magnetic flux redistribution feedback mechanism are combined, magnetic flux path balance and intelligent diagnosis are realized, and the operation stability and reliability of substation auxiliary equipment are improved.