50 results about "Magnetic skyrmion" patented technology

The invention provides a racetrack memory based on magnetic skyrmions, and belongs to the technical field of magnetic devices. The racetrack memory comprises an antiferromagnetic coupling twin-track magnetic nano belt, and the magnetic nano belt is divided into an information input part, an information storage part and an information reading part sequentially in the track direction. The magnetic skyrmions with the opposite polarity are utilized for presenting binary number zero or one, and the magnetic skyrmions move from the information input part to the information reading part in the trackdirection of the twin-track magnetic nano belt. The magnetic skyrmions are periodically generated in one of the track of the twin-track magnetic nano belt where the information input part is located,whether the polarity of the generated magnetic skyrmions needs to be changed or not is determined according to the input data, and accordingly whether the magnetic skyrmions need to be moved to the other track of the twin-track magnetic nano belt or not is determined. The information storage part is divided into a plurality of storage units in the track direction of the magnetic nano belt, and onemagnetic skyrmion is stored in one storage unit. The information reading part is used for reading the polarity of the magnetic skyrmions passing through.

The invention relates to an or gate based on magnetic Skyrmion and a control and application method thereof. The or gate comprises a magnetic nano-track, wherein the magnetic nano-track comprises a magnetic layer and a strong spin track coupling layer which are in mutual contact connection, and the magnetic layer comprises a first input end, a second input end, a Y-shaped magnetic rail and an output end. The Y-shaped magnetic rail comprises a first magnetic track, a second magnetic track, a third magnetic track and a fourth magnetic track. The magnetic Skyrmion enters the Y-shaped magnetic rail from the first input end and/or the second input end, then is changed into a magnetic domain wall pair, passes through the Y-shaped magnetic rail, and then is restored into the magnetic Skyrmion. The magnetic Skyrmion enters the output end. Each magnetic rail width of the Y-shaped magnetic rail is smaller than the diameter of the magnetic Skyrmion. Reversible conversion can be realized between the magnetic Skyrmion and the magnetic domain wall pair. The or gate formed through movement of the magnetic Skyrmion in the magnetic nano-track is characterized by small size, low power consumption and high in stability is and the magnetic Skyrmion can be copied.

The invention relates to a magnetic skyrmion-based logic gate, belonging to the technical field of magnetic devices. Magnetic skyrmions with opposite polarities represent logic 1 and 0, solving a problem of information loss and misread. Conversion between an NAND gate and a NOR gate can be realized by only changing a voltage source connection port of a voltage controlled magnetic anisotropy zone gate, so that the manufacture process is optimized greatly; the twisted magnetic skyrmion can move along an antiferromagnetic border, two twisted magnetic skyrmions can be combined into one twisted magnetic skyrmion or a traditional magnetic skyrmion, further, under drive of current, the magnetic skyrmion with topological charge of +1 or -1 and the twisted magnetic skyrmion can convert into each other, so that magnetic skyrmion-based logic operation is realized; and a logic NOT gate is realized through a principle of polar shift of the magnetic skyrmion on the antiferromagnetic coupling border.The logic gate has the characteristics of small volume, low power consumption, high stability, and fast operation speed.

The invention discloses a reconfigurable logic gate based on magnetic Skyrmion, and belongs to the technical field of magnetic devices. The magnetic Skyrmion with the polarity of +1 or -1 is used forexpressing logic 1 and logic 0, and the data loss and misreading problems are improved. Through changing the connection port of the voltage-controlled magnetic anisotropy gate power source, the conversion between the AND gate and OR gate is achieved, and the manufacturing technology is greatly optimized.0Under the drive of current, the logic operation based on the magnetic Skyrmion is achieved byusing the characteristics that the twisted magnetic Skyrmion can move along the antiferromagnetic boundary, the two twisted magnetic Skyrmions can be integrated to form one twisted magnetic Skyrmion,the magnetic Skyrmion with the topological charge of +1 or -1 can be converted into the twisted magnetic Skyrmion, and the twisted magnetic Skyrmion can also be converted into the magnetic Skyrmion with the topological charge of +1 or -1. The logic gate provided by the invention has the characteristics of small size, low power consumption, high stability and high computation speed.

A method of generating and erasing magnetic Skyrmion by using an electric field is provided. A magnetic Skyrmion material is grown on a ferroelectric material substrate. After an electric field is applied locally, the ferroelectric material produces a strain, the anisotropic property of the magnetic material is affected, the single domain state in the region under an electrode changes from a metastable state to an unstable state, and thus, magnetic Skyrmion is generated. The generation of magnetic Skyrmion by using an electric field is characterized by low power consumption and low device heat.

The invention relates to an electronic neuron based on skyrmion and an artificial neural network. The electronic neuron comprises a skyrmion generating and driving device and an annular detection device, wherein the skyrmion generating and driving device comprises a magnetic nano-film and a current injection layer; the current injection layer and the annular detection device are both arranged on the magnetic nano-film, and the current injection layer is arranged in the center of the annular detection device; the current injection layer is arranged to generate a magnetic skyrmion under the action of a generated current, and drive the magnetic skyrmion to move in a direction far away from the current injection layer under the action of a driving current, wherein the current density of the generated current is greater than that of the driving current; and the annular detection device is arranged to detect the magnetic skyrmion moving to the detection range of the annular detection device.According to the invention, the size and cost of the existing artificial neural network can be effectively reduced.

The invention discloses a microwave detection element which is composed of a sheet pinning layer, an insulating layer, a free layer and a heavy metal layer which are sequentially arranged in a stackedmode, the magnetic pinning layer on the upper layer is annular, and the free layer, the insulating layer and the heavy metal layer are arranged to be circular. Dzyaloshinskii-Moriya interaction can be generated between the heavy metal layer material and the free layer material; magnetic moments in the pinning layer are arranged in the vertical direction, and the magnetic moments in the free layerare arranged in a magnetic skyrmion state due to the Dzyaloshinskii-Moriya interaction. According to the microwave detection element disclosed by the invention, when a microwave current signal is input, the size of the magnetic skyrmion can be periodically changed, the resistance value of the element can also be periodically changed due to the existence of a tunnel magnetoresistance effect, and the microwave detection element can be coupled with the input microwave current to generate a direct-current signal, so that microwave detection is realized. According to the invention, the sensitivityvalue can be greatly improved.

The invention relates to the field of computational physics and materials science, and applies quantum theory to simulation of magnetic skyrmion lattices and magnetic vortex lattices. The method comprises the steps that: 1, respective rotations in the Hamiltonian quantity of the magnetic system are quantum mechanics operators; 2, all physical quantities are calculated strictly according to a quantum theory; 3, a self-consistent algorithm is adopted; 4, simulation is performed on gradual reduction to low temperature from high temperature so as to ensure correct convergence of a program; 5, periodic boundary conditions are adopted; 6, a vertical external magnetic field is considered, so that spiral stripes generated by the exchange effect of the DMI and the Heisenberg are changed into skyrmion or vortex lattices; 7, when Heisenberg exchange and DMI effects coexist, the Compass type anisotropy effect is considered, and skyrmion lattices with the opposite neighbor vortex directions are simulated. The defects of micro-magnetism and a Monte-Carlo two-classic method are overcome, so that simulation is very flexible and convenient, and particularly in a quantum scale, a periodic magnetic structure which cannot be calculated by the two-classic method is simulated.

The invention relates to a storage device based on magnetic skyrmion and a method for storing information by the device, which can realize multiple replication, multi-bit storage and information screening functions of information. The memory device includes: a track including a first segment, a second segment, a third segment, and a fourth segment, one end of the first segment being connected to one end of the second segment, the other end of the second segment being connected to one end of the third segment and one end of the fourth segment, and a defect being formed on the surface of the second segment material; a write-in end arranged at the other end of the first segment and used for writing in the magnetic skyrmion; a first reading end arranged at the other end of the third segment and used for reading the magnetic skyrmion entering the third segment; and a second reading end arranged at the other end of the third segment and used for reading the magnetic skyrmion entering the fourth segment.

The invention provides a rare earth based magnetic skyrmions material as well as a preparation method and application thereof. The general chemical formula of the magnetic skyrmions material is rare earth Ra(Mn<1-x>Ge<1+x>)bZc, wherein R is one of or a mixture of more of Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm and Yb, and Z is one or more of Fe, Co, Ni, Cu, Zn, Al, Mg, Si, Sn and Cd; and a is larger than or equal to 20 and smaller than or equal to 25, b is larger than or equal to 75 and smaller than or equal to 80, x is larger than or equal to 0 and smaller than or equal to 0.1, c is larger than or equal to 0 and smaller than or equal to 10, the sum of a, b and c is 100, and a, b, c and x represent atomic percent contents. The rare earth based magnetic skyrmions material has a magnetic skyrmions structure in the temperature range of 20 K-400 K, has low raw material cost and controllable components and is an ideal skyrmions-based candidate material for magnetic storage and logicaloperation, and the method is simple in process and applicable to industrialization.

The invention relates to a method for driving a magnetic skyrmion. The method comprises the following steps: forming the Neel type magnetic skyrmion in a film; applying a vortex light field with a target frequency to the cylindrical ferromagnetic material to excite vortex spin waves in a target mode; and propagating the vortex spin waves into the film through the interlayer coupling effect betweenmaterials in order to drive the Neel type magnetic skyrmion to move. The problem of transverse drifting motion caused by the Hall effect of the skyrmion can be effectively solved, the problem of joule heat can be avoided by using the spin waves to drive skyrmion, and the loss in the information transmission process is effectively reduced. The magnetic skyrmion can be driven to climb over the defects of a large scale through the spin waves under the condition that the material has defects, and then the purpose of accurately controlling the magnetic skyrmion is achieved. In addition, compared with the rotational motion of the magnetic skyrmion driven by twisted photons (optical vortexes), the method is easier to implement.

The invention discloses a heat-assisted magnetic skyrmion memory, which belongs to the technical field of digital circuits. The memory comprises a pinning layer, a tunneling layer, a free layer and aheavy metal layer which are stacked in sequence; the pinning layer, the tunneling layer and the free layer form a magnetic tunnel junction; both the pinning layer and the free layer have perpendicularmagnetic anisotropy; the pinning layer and the tunneling layer are of cylindrical structures, and the film surfaces of the pinning layer and the tunneling layer are both smaller than the film surfaceof the free layer; the pinning layer and the tunneling layer are used for injecting one-way local current into the free layer to induce generation of skyrmion in the free layer or annihilate skyrmionin the free layer; the film surface shape of the heavy metal layer is the same as that of the free layer, and the heavy metal layer is used for generating an interface DMI with the free layer to stabilize the skyrmion; thermal barrier layers are stacked on the outer side of the pinning layer and the outer side of the heavy metal layer respectively, and the pinning layer and the heavy metal layerare both made of materials with low heat conductivity coefficients and used for improving heating efficiency. Compared with a traditional heat-assisted magnetic memory, the heat-assisted magnetic skyrmion memory has the advantages that the heating temperature can be effectively reduced, and the reliability of the memory is improved.

The invention discloses an AND logic gate and an NAND logic gate based on magnetic skyrmion. The magnetic skyrmion is placed in the annular magnetic racing track. A voltage driving mode is adopted toenable the skyrmion to circularly move in the magnetic racing track, and the state of the skyrmion in the magnetic racing track is read through the magnetic tunnel junction, so that the logic functions of the AND gate and the NAND gate are realized, and the stability of the NOT gate based on the skyrmion and the AND gate in use is ensured.

The invention discloses a memristor based on magnetic skyrmion, and a resistance regulation and control method of the memristor. The memristor sequentially comprises a substrate, a first ferromagneticlayer and a second ferromagnetic array layer from bottom to top, wherein the second ferromagnetic array layer comprises a plurality of second ferromagnetic units arranged in an array mode, each second ferromagnetic unit comprises a middle layer and a second ferromagnetic layer located on the middle layer, the middle layer and the second ferromagnetic layer are of cylinder structures with the samediameter, and the middle layer provides antiferromagnetic coupling for the first ferromagnetic layer and the second ferromagnetic layer. According to the invention, the size of the skyrmion in the memristor is regulated and controlled by applying an external magnetic field, the size of the skyrmion is gradually increased or decreased along with the increase or decrease of the external magnetic field, and the change of the size of the skyrmion directly causes the change of magnetic moment distribution in the memristor, so that the change of the resistance of the memristor is caused; and the memristor is small in size, simple in structure and capable of being integrated in a high-density and large-scale mode, and the change between the high resistance state and the low resistance state is gradually changed, continuous and controllable.