Magnetic skyrmion-based logic gate

A magnetic skyrmion and logic gate technology, applied in the field of logic gates, can solve the problems of limited integration, large volume of logic gates, high power consumption, etc., and achieve the effects of improving misreading and information loss, small size and low power consumption

Active Publication Date: 2018-09-11
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Description
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Problems solved by technology

[0009] The logic gate made of the traditional CMOS structure is large in size a

Method used

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  • Magnetic skyrmion-based logic gate
  • Magnetic skyrmion-based logic gate
  • Magnetic skyrmion-based logic gate

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Embodiment Construction

[0058] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0059] A new type of magnetic structure is utilized in the present invention: twisted magnetic skyrmions, twisted magnetic skyrmions exist in the antiferromagnetic boundary and can move along the antiferromagnetic boundary, and two twisted magnetic skyrmions can also fuse It is a twisted magnetic skyrmion or a traditional magnetic skyrmion; driven by an electric current, a magnetic skyrmion with a topological charge of +1 or -1 can be transformed into a twisted magnetic skyrmion, and a twisted magnetic skyrmion can also into magnetic skyrmions with a topological charge of +1 or -1.

[0060] The logic NAND gate and NOR gate based on magnetic skyrmion provided by the present invention includes a first input terminal, a second input terminal and an output terminal, wherein the first input terminal includes a first input terminal arranged in para...

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Abstract

The invention relates to a magnetic skyrmion-based logic gate, belonging to the technical field of magnetic devices. Magnetic skyrmions with opposite polarities represent logic 1 and 0, solving a problem of information loss and misread. Conversion between an NAND gate and a NOR gate can be realized by only changing a voltage source connection port of a voltage controlled magnetic anisotropy zone gate, so that the manufacture process is optimized greatly; the twisted magnetic skyrmion can move along an antiferromagnetic border, two twisted magnetic skyrmions can be combined into one twisted magnetic skyrmion or a traditional magnetic skyrmion, further, under drive of current, the magnetic skyrmion with topological charge of +1 or -1 and the twisted magnetic skyrmion can convert into each other, so that magnetic skyrmion-based logic operation is realized; and a logic NOT gate is realized through a principle of polar shift of the magnetic skyrmion on the antiferromagnetic coupling border.The logic gate has the characteristics of small volume, low power consumption, high stability, and fast operation speed.

Description

technical field [0001] The invention belongs to the technical field of magnetic devices, and in particular relates to a logic gate for realizing a NAND gate, an NOR gate and a NOT gate based on magnetic skyrmions. Background technique [0002] Logic gates are the cornerstone of modern electronic information technology. In digital circuits, high and low levels are usually used to represent logic "1" and "0". Different logic gates can be used to implement different Boolean functions, such as NAND gates and NOR gates. NAND gates are basic logic gates, and the truth tables corresponding to NAND gates, NOR gates and NOR gates are as follows: [0003] input A input B Output F 0 0 1 0 1 1 1 0 1 1 1 0 [0004] Table 1: Truth Table for Logical NAND Gates [0005] input A input B Output F 0 0 1 0 1 0 1 0 0 1 1 0 [0006] Table 2: Truth Table fo...

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Application Information

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IPC IPC(8): H03K19/19H03K19/20
CPCH03K19/19H03K19/20
Inventor 杨欢欢汪晨王小凡曹云姗严鹏
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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