Or gate based on magnetic Skyrmion and control and application method thereof

A magnetic skyrmion and magnetic layer technology, applied in the direction of logic circuits with logic functions, can solve the problems of unable to meet the needs of information storage, large volume, low stability, etc., and achieve the effect of meeting the needs of information storage

Inactive Publication Date: 2017-11-07
THE CHINESE UNIV OF HONG KONG SHENZHEN
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing OR gate adopts the traditional CMOS structure, which is large in size, high in power con

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Or gate based on magnetic Skyrmion and control and application method thereof
  • Or gate based on magnetic Skyrmion and control and application method thereof
  • Or gate based on magnetic Skyrmion and control and application method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0034] figur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Overall widthaaaaaaaaaa
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Login to view more

Abstract

The invention relates to an or gate based on magnetic Skyrmion and a control and application method thereof. The or gate comprises a magnetic nano-track, wherein the magnetic nano-track comprises a magnetic layer and a strong spin track coupling layer which are in mutual contact connection, and the magnetic layer comprises a first input end, a second input end, a Y-shaped magnetic rail and an output end. The Y-shaped magnetic rail comprises a first magnetic track, a second magnetic track, a third magnetic track and a fourth magnetic track. The magnetic Skyrmion enters the Y-shaped magnetic rail from the first input end and/or the second input end, then is changed into a magnetic domain wall pair, passes through the Y-shaped magnetic rail, and then is restored into the magnetic Skyrmion. The magnetic Skyrmion enters the output end. Each magnetic rail width of the Y-shaped magnetic rail is smaller than the diameter of the magnetic Skyrmion. Reversible conversion can be realized between the magnetic Skyrmion and the magnetic domain wall pair. The or gate formed through movement of the magnetic Skyrmion in the magnetic nano-track is characterized by small size, low power consumption and high in stability is and the magnetic Skyrmion can be copied.

Description

technical field [0001] The invention relates to the technical field of OR gate manufacturing, in particular to an OR gate based on magnetic skyrmions and its control and application method. Background technique [0002] The rapid development of information technology has not only improved the quality of life of human beings, but also put forward the requirements for the rapid development of information storage technology in the direction of high density, high speed and low energy consumption. The existing OR gate adopts the traditional CMOS structure, which is large in size, high in power consumption, and low in stability. Obviously, it cannot meet people's increasing information storage needs. Contents of the invention [0003] Based on this, it is necessary to provide an OR gate with small size, low power consumption and high stability. [0004] An OR gate based on magnetic skyrmions, comprising a magnetic nano-track, the magnetic nano-track includes a magnetic layer an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K19/20
CPCH03K19/20
Inventor 张溪超江泽雅彦周艳
Owner THE CHINESE UNIV OF HONG KONG SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap